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Field effect

About: Field effect is a research topic. Over the lifetime, 4018 publications have been published within this topic receiving 92613 citations.


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Journal ArticleDOI
TL;DR: In this article, the Stern layer effect is taken into account for active control of surface charge property and electroosmotic flow in a silica-based nanochannel using a field effect transistor (FET).
Abstract: Active control of surface charge property and electroosmotic flow (EOF) in a silica-based nanochannel using a field effect transistor (FET) is analyzed for the first time taking the Stern layer effect into account. Approximations for surface charge property and EOF have been derived and validated by comparing their predictions with experimental data available in the literature. We show that, in addition to the background solution properties such as its pH and salt concentration, the field effect control of the zeta potential of the nanochannel wall and the EOF velocity depends highly on the surface capacitance of the Stern layer, stemming from the attraction of immobile counterions within that layer. The Stern layer effect becomes significant when the background salt concentration, solution pH, and/or the applied gate potential are relatively high. Results gathered provide valuable information for designing relevant gated nanofluidic devices for regulating ion, fluid flow, and biomolecule transport.

63 citations

Journal ArticleDOI
TL;DR: In this article, an enhancement mode high electron mobility transistors (E-HEMTs) with selectively doped GaAs/n-AlxGa1-xAs heterojunction structures grown by molecular beam epitaxy are described.
Abstract: Enhancement-mode high electron mobility transistors (E-HEMTs) with selectively doped GaAs/n-AlxGa1-xAs heterojunction structures grown by molecular beam epitaxy are described. E-HEMTs with 2- µm long gates have exhibited the square-law drain characteristic. The device has a gm of 409 mSmm-1 of gate width at 77 K and 193 mSmm-1 at 300 K. This value of gm at 77 K is the highest in all field effect devices reported thus far.

63 citations

Journal ArticleDOI
TL;DR: In this paper, the work function of an electronic as well as an ionic conductor is defined and the parameters of the sensing parameters of a recently developed MOSFET, meant for application in an electrolyte, can clearly be identified.
Abstract: This paper gives first of all the definition of the work function of an electronic as well as an ionic conductor. FET-type gas sensors known from the literature are considered in view of this basic theory and the parameter of the work function which is responsible for the sensing properties is noticed. This appears not always to be possible for the various types of gas sensors, in this case the gas FET, the SGFET and the IGFET. In contrast to this ambiguity, the sensing parameters of the recently developed MOSFET, meant for application in an electrolyte, can clearly be identified. As an example an oxygen sensor based on the developed MOSFET is described.

63 citations

Journal ArticleDOI
TL;DR: This work shows that high-quality gate dielectrics consisting of polymeric materials can be vacuum-processed and supports low-hysteresis transport in C60 and pentacene.

63 citations

Journal ArticleDOI
TL;DR: It is demonstrated that solvothermally synthesized Bi(2)Se(3) nanoplates are attractive for topological insulator studies, and pronounced ambipolar field effect is observed that demonstrates the flexible manipulation of carrier type and concentration for these nanostructures.
Abstract: A topological insulator is a new phase of quantum matter with a bulk band gap and spin-polarized surface states, which might find use in applications ranging from electronics to energy conversion. Despite much exciting progress in the field, high-yield solution synthesis has not been widely used for the study of topological insulator behavior. Here, we demonstrate that solvothermally synthesized Bi2Se3 nanoplates are attractive for topological insulator studies. The carrier concentration of these Bi2Se3 nanoplates is controlled by compensational Sb doping during the synthesis. In low-carrier-density, Sb-doped Bi2Se3 nanoplates, we observe pronounced ambipolar field effect that demonstrates the flexible manipulation of carrier type and concentration for these nanostructures. Solvothermal synthesis offers an affordable, facile approach to produce high-quality nanomaterials to explore the properties of topological insulators.

62 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20235
202210
202171
202078
2019103
2018133