Topic
Field effect
About: Field effect is a research topic. Over the lifetime, 4018 publications have been published within this topic receiving 92613 citations.
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TL;DR: In this article, the influence of an electric field on interband transitions was investigated in germanium samples and it was shown that the field-induced change in the absorption coefficient ''undercuts'' the field free absorption curve in the top portion of the fundamental absorption edge as predicted by the theory of the Franz-Keldysh effect.
Abstract: This paper reports on simultaneous measurements of the reflectivity at normal incidence between 0.7 and 4.6 eV and the field effect of the surface conductance over a wide range of different surface conditions in germanium samples. In the wavelength region of direct interband transitions, the reflectivity is a function of the surface potential. It is concluded that the electric fields in the surface potential barrier are strong enough to change the optical properties of the surface region by Franz—Keldysh effect. A theoretical estimate based on this assumption reproduces the experimental results qualitatively. Since the effect is observed in reflection rather than in transmission, the influence of an electric field on interband transitions can be studied well above the fundamental absorption edge. It is shown that they are affected by an electric field in a way similar to the transitions which produce the fundamental absorption edge. It is further concluded that the field‐induced change in the absorption coefficient ``undercuts'' the field‐free absorption curve in the top portion of the fundamental absorption edge as predicted by the theory of the Franz—Keldysh effect.
52 citations
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TL;DR: In this paper, the behavior of a semiconductor-insulator-metal capacitor is analyzed as a function of the frequency of a small a.c. voltage and of a d. c. bias voltage.
Abstract: The a.c. behavior of a semiconductor-insulator-metal capacitor is analyzed as a function of the frequency of a small a.c. voltage and of a d.c. bias voltage. Our analysis differs from previous work by G arrett , B erz and Y unovich , respectively, which dealt mainly with field effect conductivity, in the following respects: 1. Both (I), the extreme case of negligible recombination rate in the space-charge layer, and (II) the opposite extreme case of infinite recombination rate in the space-charge layer, are treated. 2. Deviations from the Boltzmann distributions of carriers in the space-charge layer at current flow are taken into account. 3. Equivalent circuits are derived from which the frequency dependence and the loss angle can be more readily appreciated than from the involved analytic expressions for the impedance. 4. Graphs are provided for the determination of the impedance as function of bias, frequency and of resistivity of the semiconductor for a semiconductor free of surface states.
52 citations
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TL;DR: In this paper, a series of measurements of minority carrier lifetime with the microwave photo-conductance decay (µPCD) technique, infrared absorption spectra, and surface potential with Kelvin probe force microscopy (KPFM) were conducted to show that there is no evidence of significant chemical passivation coming from the GO films but rather negative field effect passivation.
52 citations
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TL;DR: In this article, the surface Shubnikov-de Haas oscillations have been measured in p-type channels of (110) silicon field effect transitors between 1.4 and 4.2 K in magnetic fields up to 10 Tesla.
52 citations
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TL;DR: In this article, the effects of yttrium doping on the electrical performance and stability of ZnO thin film transistors (TFTs) were investigated by using radio frequency magnetron sputtering at 150°C.
52 citations