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Field effect

About: Field effect is a research topic. Over the lifetime, 4018 publications have been published within this topic receiving 92613 citations.


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Journal ArticleDOI
Yantao Chen1, Xiaohan Wu1, Yingli Chu1, Jiachen Zhou1, Bilei Zhou1, Jia Huang1 
TL;DR: This study provides a strategy to combine the advantages of perovskite nanorods and organic semiconductors in fabrication of high-performance photodetectors.
Abstract: The outstanding performances of nanostructured all-inorganic CsPbX3 (X = I, Br, Cl) perovskites in optoelectronic applications can be attributed to their unique combination of a suitable bandgap, high absorption coefficient, and long carrier lifetime, which are desirable for photodetectors. However, the photosensing performances of the CsPbI3 nanomaterials are limited by their low charge-transport efficiency. In this study, a phototransistor with a bilayer structure of an organic semiconductor layer of 2,7-dioctyl [1] benzothieno[3,2-b] [1] benzothiophene and CsPbI3 nanorod layer was fabricated. The high-quality CsPbI3 nanorod layer obtained using a simple dip-coating method provided decent transistor performance of the hybrid transistor device. The perovskite layer efficiently absorbs light, while the organic semiconductor layer acts as a transport channel for injected photogenerated carriers and provides gate modulation. The hybrid phototransistor exhibits high performance owing to the synergistic function of the photogating effect and field effect in the transistor, with a photoresponsivity as high as 4300 A W−1, ultra-high photosensitivity of 2.2 × 106, and excellent stability over 1 month. This study provides a strategy to combine the advantages of perovskite nanorods and organic semiconductors in fabrication of high-performance photodetectors.

51 citations

Journal ArticleDOI
J.R. Hauser1
TL;DR: In this article, the small signal properties of field effect devices are treated analytically based on an active, distributed transmission line analogy to the conductive channel of FEDs.
Abstract: The small signal properties of field effect devices are treated analytically. The analysis is based upon an active, distributed transmission line analogy to the conductive channel of field effect devices. Within the limitations of the gradual channel approximation, a general analysis is presented which is applicable to both junction and MOS field effect devices. Equivalent circuits are obtained which describe field effect device characteristics in the region below saturation as well as in the current saturation region. Effects of parasitic elements on the terminal y parameters in practical devices are considered. Specific device models are considered for junction devices and MOS devices and the more important equivalent circuit parameters are evaluated in terms of the dc terminal voltages.

51 citations

Journal ArticleDOI
TL;DR: In this paper, the influence of a magnetic field on the transport properties of binary mixtures of a polyatomic and a noble gas is studied theoretically using an inverse operator technique, first thermal conductivity and viscosity are treated, then diffusion and thermal diffusion are discussed in detail, with special emphasis on the composition dependence.
Abstract: The influence of a magnetic field on the transport properties of binary mixtures of a polyatomic and a noble gas is studied theoretically. Using an inverse operator technique, first thermal conductivity and viscosity are treated. Then diffusion and thermal diffusion are discussed in detail, with special emphasis on the composition dependence. A relation connecting the magnitudes of the field effects on thermal conductivity, diffusion, and thermal diffusion is derived. This relation is used to estimate the field effect on diffusion.

50 citations

Journal ArticleDOI
TL;DR: In this article, a strong field-dependent mobility in organic field-effect transistors fabricated by using poly(2,5-bis(3-tetradecylthiophene-2-yl)thieno[3,2-b] thiophene) (pBTTT-C14) as the active polymer layer is reported.
Abstract: We report on a strong field-dependent mobility in organic field-effect transistors fabricated by using poly(2,5-bis(3-tetradecylthiophene-2-yl)thieno[3,2-b]thiophene) (pBTTT-C14) as the active polymer layer Charge transport and mobilities in devices annealed in the mesophase show a more pronounced dependence on channel length as compared with as-cast devices Analysis reveals that the contact effects in both sets of devices are negligible from room temperature down to ≈100K We show that this field dependence is consistent with a Poole-Frenkel model of mobility Finally, the nonlinear transport data for short channel devices are modeled consistently in the Poole-Frenkel framework over a broad temperature range

50 citations

Journal ArticleDOI
TL;DR: In this paper, the stability of the single-domain spontaneous polarization in a thin ferroelectric film on a semiconductor is theoretically investigated using an insulating homogeneous Ginzburg-Landau theory.
Abstract: Stability of the polarization in a thin ferroelectric film on a semiconductor is theoretically investigated using an insulating homogeneous Ginzburg–Landau theory. Dependence of the stability on various parameters such as the ferroelectric thickness, the materials (BaTiO3, KNbO3, PbTiO3, Bi4Ti3O12), the interfacial defects, the work function difference, the epitaxial orientation, and the buffer insulator thickness is numerically and analytically studied, and the results are qualitatively compared with the past experiments on ferroelectric field effect devices. The spontaneous polarization in a ferroelectric single-domain on a semiconductor is shown to be bistable in agreement with recent experiments. Furthermore, its thickness limit of the ferroelectric stability is found to be very small, implying a great potential of this structure for the miniaturization. The single-domained spontaneous polarization is destabilized when even a very thin insulating layer exists between the ferroelectric and the semicond...

50 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20235
202210
202171
202078
2019103
2018133