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Field effect

About: Field effect is a research topic. Over the lifetime, 4018 publications have been published within this topic receiving 92613 citations.


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Journal ArticleDOI
TL;DR: In this article, an anomalous field effect and its slow relaxation are studied in some detail in the electrical conductance of insulating granular aluminium thin films, which is very similar to the one already observed in indium oxide.
Abstract: We present a study of non-equilibrium phenomena observed in the electrical conductance of insulating granular aluminium thin films. An anomalous field effect and its slow relaxation are studied in some detail. The phenomenology is very similar to the one already observed in indium oxide. The origin of the phenomena is discussed. In granular systems, the present experiments can naturally be interpreted along two different lines. One relies on a slow polarisation in the dielectric surrounding the metallic islands. The other one relies on a purely electronic mechanism: the formation of an electron Coulomb glass in the granular metal. More selective experiments and/or quantitative predictions about the Coulomb glass properties are still needed to definitely distinguish between the two scenarios.

45 citations

Journal ArticleDOI
TL;DR: In this paper, the field effect modulation of ionic transport through an array of cylindrical nanopores fabricated in silicon-on-insulator substrates is demonstrated, and a numerical model based on Brownian dynamics reproduces the measured data.
Abstract: Results demonstrating the field effect modulation of ionic transport through an array of cylindrical nanopores fabricated in silicon-on-insulator substrates are presented. Pronounced modulation of the conductance is observed at low electrolyte concentrations when the electric double layers within the nanopores are overlapping. A numerical model based on Brownian dynamics reproduces the measured data.

44 citations

Journal ArticleDOI
TL;DR: In this article, the authors focus on reverse conduction and transistors behavior during dead times in an inverter leg structure and present an approach by calorimetric method, dedicated to transistors losses evaluation during operation.
Abstract: GaN field effect power transistors based on Si substrate show low on-state resistance and very small Cgs capacitance. Therefore these devices are good candidates for high-frequency switching operation. In this paper, we first focus on reverse conduction and transistors behavior during dead times in an inverter leg structure. Then we present an approach by calorimetric method, dedicated to transistors losses evaluation during operation. Using this method, we evaluate in a single measurement the transistors temperature and losses versus a chosen dead time or versus frequency. At least, we conclude on good practices regarding the drive of these components.

44 citations

Journal ArticleDOI
TL;DR: In this article, the field effect on the ionic current rectification (ICR) in the conical nanofluidic FET was comprehensively investigated using a continuum model, composed of Nernst-Planck equations for ionic concentrations, Poisson equation for the electric potential, and Navier-Stokes equations for the flow field.
Abstract: A conical nanofluidic field effect transistor (FET) refers to a conical nanopore embedded with an electrically controllable gate electrode. The surface potential of the nanopore can be effectively regulated by manipulating the gate potential applied to the gate electrode, which in turn controls the ionic current through the nanopore. The field effect on the ionic current rectification (ICR) in the conical nanofluidic FET is comprehensively investigated using a continuum model, composed of Nernst–Planck equations for the ionic concentrations, Poisson equation for the electric potential, and Navier–Stokes equations for the flow field. Under the conditions of a low ionic concentration, a low surface charge density of the nanopore, and a high permittivity of the dielectric nanopore, regulation of ICR by FET is significant. The field effect on the ICR with the gate electrode located in the middle region is opposite to that with the gate electrode located near the tip of the nanopore.

44 citations

Journal ArticleDOI
TL;DR: In this paper, a tutorial review elucidates the physical mechanism and discusses some typical results of the field effect control of ion, fluid and particle electrokinetic transport in micro/nanofluidics.
Abstract: Electrokinetics has emerged as one of the most promising techniques to transport and manipulate ions, fluid and particles in micro/nanofluidic devices. Field effect permits flexible and rapid control of the surface charge property on the channel wall, which in turn offers a more sophisticated control of the electrokinetic transport phenomena in micro/nanofluidics. In the field effect control, a potential named as gate potential is applied to a gate electrode patterned on the outer surface of the dielectric channel wall in contact with an aqueous solution, and the imposed radial electric field can effectively modulate the surface potential at the channel/liquid interface, resulting in the redistribution of ions and accordingly the ionic conductance of a nanochannel. The modulation of the surface potential at the channel/liquid interface can also affect the electrokinetic transport of fluids and particles. This tutorial review elucidates the physical mechanism and discusses some typical results of the field effect control of ion, fluid and particle electrokinetic transport in micro/nanofluidics.

44 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20235
202210
202171
202078
2019103
2018133