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Field effect
About: Field effect is a research topic. Over the lifetime, 4018 publications have been published within this topic receiving 92613 citations.
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TL;DR: In this paper, the authors demonstrate that the use of field effect gating enables tuning of the effective optical parameters of a layered hyperbolic metamaterial at optical frequencies, leading to topological transitions in the optical dispersion characteristics.
Abstract: We demonstrate that use of the field effect enables tuning of the effective optical parameters of a layered hyperbolic metamaterial at optical frequencies. Field-effect gating electrically modulates the permittivity in transparent conductive oxides via changes in the carrier density. These permittivity changes lead to active modulation of the effective electromagnetic parameters along with active control of the anisotropic dispersion surface of hyperbolic metamaterials and enable the opening and closing of photonic band gaps. Tunability of the effective electric permittivity and magnetic permeability also leads to topological transitions in the optical dispersion characteristics.
44 citations
TL;DR: In this article, a dual-gate field effect transistor configuration was evaluated using an Al2O3/HfO2 bilayer and showed significant improvement in device performance due to the insertion of the thin Al 2O3 layer, which significantly reduced the net fixed positive oxide charge at the top-gate MoS2/high-k dielectric interface.
Abstract: High quality sub-10 nm high-k dielectrics are deposited on top of MoS2 and evaluated using a dual-gate field effect transistor configuration. Comparison between top-gate HfO2 and an Al2O3/HfO2 bilayer shows significant improvement in device performance due to the insertion of the thin Al2O3 layer. The results show that the Al2O3 buffer layer improves the interface quality by effectively reducing the net fixed positive oxide charge at the top-gate MoS2/high-k dielectric interface. Dual-gate sweeping, where both the top-gate and the back-gate are swept simultaneously, provides significant insight into the role of these oxide charges and improves overall device performance. Dual-gate transistors encapsulated in an Al2O3 dielectric demonstrate a near-ideal subthreshold swing of ∼60 mV/dec and a high field effect mobility of 100 cm2/V·s.
44 citations
TL;DR: In this article, the effects of various processes such as active layer doping, annealing, selective doping on the contact metals with self-assembly and especially surface treatment of gate insulator with organic molecules on the performance of pentacene-based OTFTs are investigated.
Abstract: Organic thin film transistors (OTFTs) are expected to find the special applications, which can not be achieved by Si devices. In this paper we investigated the effects of various processes such as active layer doping, annealing, selective doping on the contact metals with self-assembly and especially surface treatment of gate insulator with organic molecules on the performance of pentacene-based OTFTs. It has been found that the selective doping on metal contacts is a good way to improve the contact property. And the usage of OTS as the organic molecule for surface treatment of gate insulator is the most effective way to enhance the field effect mobility to 0.3 cm2/Vs and the on/off ratio to 106.
44 citations
TL;DR: In this article, an exact theory for the electronic density of bulk gap states in amorphous semiconductors from field effect and capacitance-voltage measurements is presented, where the analytical expression for the density of the gap states is given as a function of the surface potential of amorphou semiconductor.
Abstract: An exact theory for the calculation of the electronic density of bulk gap states in amorphous semiconductors from field effect and capacitance-voltage measurements is presented. The analytical expression for the density of the gap states is given as a function of the surface potential of amorphous semiconductors. It is also shown that the influence of surface states on the measured gap states can be completely eliminated by combining a capacitance-voltage method with a field effect technique.
44 citations
TL;DR: In this article, the availability of stable MOS gate systems and high density storage capacitors is an essential requirement for the development of the field effect storage technology, and improved insight into the properties of the Si/Si02 system and perfection of its growth technology will secure its role in Si MOSFET memories for the future.
Abstract: The availability of stable MOS gate systems and high density storage capacitors is an essential requirement for the development of the field effect storage technology. For standard MOSFET gates this role has been fulfilled by SiO2 grown by thermal oxidation of the Si substrate. Improved insight into the properties of the Si/Si02 system and perfection of its growth technology will secure its role in Si MOSFET memories for the future. For charge storage application the stability requirements are less demanding. However, here SiO2 is not able to provide sufficient capacity. In this case higher dielectric constant materials (Si3N4 or Ta2O5) have to take over. Particularly attractive appears the use of ferroelectrics. These dielectric materials not only offer a high dielectric constant, but also the perspective of providing non-volatile storage in capacitor structures.
44 citations