Field effect

About: Field effect is a research topic. Over the lifetime, 4018 publications have been published within this topic receiving 92613 citations.

A self-consistent analysis of temperature-dependent field-effect measurements in hydrogenated amorphous-silicon thin-film transistors

Abstract: We calculated a more accurate density of states (DOS) profile from field‐effect (FE) measurements in hydrogenated amorphous silicon thin‐film transistors, taking into account the anomalously changing conductivity prefactor in accordance with the Meyer–Neldel (MN) rule. We present a self‐consistent analysis of the density of gap states profile, where the MN rule is, for the first time, properly considered in relation to the nonuniform shift of the Fermi level as induced by the field effect. Moreover, the calculation yields the correct flat‐band voltage and the corresponding flat‐band activation energy. The determination of conductivity activation energies free from any initial band bending effects is of importance in all types of transport measurements.

Method of fabricating field effect thin film transistor

Abstract: A method of fabricating a field effect thin film transistor is provided, in which, after a first amorphous semiconductor layer having a predetermined thickness is deposited on a gate insulating film, the first amorphous semiconductor layer is transformed to a micro-crystal semiconductor layer by exposing it to hydrogen plasma produced by hydrogen discharge and, then, a second amorphous semiconductor layer is deposited on the micro-crystal semiconductor layer. According to this method, it is possible to fabricate a high performance and high quality field effect thin film transistor through a simplified step of forming the micro-crystal semiconductor which becomes a channel region thereof.

Differentiation of Effects due to Grain and Grain Boundary Traps in Laser Annealed Poly-Si Thin Film Transistors

Abstract: A new physical model based on two dimensional simulations for high quality laser re-crystallised poly-Si thin film transistors is presented. It has been shown that to adequately explain the improved subthreshold slope and the lack of saturation of the output characteristics in these transistors, it is essential to distribute the density of defect states between traps in the grains alongside traps localised at grain boundaries. A double exponential density of states has been extracted for thin film transistors (TFTs) annealed at different excimer laser energies, using the field effect conductance method. By splitting the density of states between grain traps and grain boundary traps good fits to the output characteristics have been achieved. Lack of saturation is shown to be due to decrease in potential barrier at grain boundaries with increase in drain bias. At high gate voltages, however, evidence of a self-heating effect similar to that observed in silicon-on-insulator (SOI) transistors is apparent.

Effects of interface state density on 4H-SiC n-channel field-effect mobility

Abstract: We investigated the effects of D IT at the interface between SiO2 and Si-, C-, and a-face 4H-SiC in n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) that were subjected to dry/nitridation and pyrogenic/hydrotreatment processes. D IT at E C − E T = 0.2 eV was evaluated by the C − ψ S method using MOS capacitors and was accurately reflected in the subthreshold slope of the MOSFETs. The peak field-effect mobility was inversely proportional to D IT. The mobility for the a-face MOSFETs was 1.5 times or more higher than the other faces mobilities, indicating that mobility limiting factors other than D IT(0.2 eV) may exist for the Si- and C-face interfaces.

EM Drive Thruster by Anti Maxwell Dual Monopole Tubular Interference Field Reduction Around a Conductor.

Abstract: A so called Em Drive ( Electro Magentic Drive) defy classical physics expectations because it shows repellent less or reaction less thruster qualities. According to Quantum FFF Theory (Function Follows Form at the quantum level) however, the magnetic field is build on two monopole rigid string particles which can be represented as curved lines of radiation trajectories, for a stable magnetic field more or less cooperating by opposing each other. Thus, the magnetic quantum field has always TWO different shaped curved monopole vector components: a North- and a South vector field component. This is comparable with the electric Quantum field, equipped with Plus and Minus vector components but it is in contrast with all other quantum fields like the neutrino- gravity-or x-gamma ray field. However, based on observation of iron filing-powder patterns, close to direct currents in a wire, it is postulated, that these monopole ( N+S) particle/ wave dualities travel locally parallel to each other inside the vacuum Axion/Higgs field, with a strong field reduction result also called a magnetic B-flied effect. A so called B field is well known to be present around a long solenoid. Inside the spiral solenoid, there is the strongest magnetic field present, however outside the solenoid the magnetic field is reduced down to zero, also originated by the anti Maxwell dipping field effect . This Anti Maxwell dipping phenomenon is originated by the interference of both ( N+S) monopole fields of parallel propagating magnetic monopole radiation trajectories, according to my monopole magnetic Quantum FFF model. These B field reductions (or dipping) are also observed to be concentrated in a tubular form around the current in a conductor..