Field effect

About: Field effect is a research topic. Over the lifetime, 4018 publications have been published within this topic receiving 92613 citations.

Analysis of the contact resistance in amorphous InGaZnO thin film transistors

Abstract: Contact resistance has great impact on the performance of oxide thin film transistors (TFTs) and their applications. In this letter, temperature, gate voltage, and electrode dependences of the contact resistance were investigated in amorphous InGaZnO (a-IGZO) TFTs. We found that gate voltage dependent contact resistance made a large contribution to or even dominated the “field effect” of oxide TFTs. After separating the influence of contact resistance, the intrinsic temperature dependent field effect mobility of the a-IGZO TFTs was obtained. Furthermore, the experimental data of the contact resistance can be well described by an optimized transmission line model, and the height of the Schottky barrier in the interface between the metal electrode and a-IGZO semiconductor was found to be related to the gate voltage and account for the contact resistance's dependence on the gate voltage.

Electronic Modulation of Near-Field Radiative Transfer in Graphene Field Effect Heterostructures.

Abstract: Manipulating heat flow in a controllable and reversible manner is a topic of fundamental and practical interest. Numerous approaches to perform thermal switching have been reported, but they typically suffer from various limitations, for instance requiring mechanical modulation of a submicron gap spacing or only operating in a narrow temperature window. Here, we report the experimental modulation of radiative heat flow by electronic gating of a graphene field effect heterostructure without any moving elements. We measure a maximum heat flux modulation of 4 ± 3% and an absolute modulation depth of 24 ± 7 mW m–2 V–1 in samples with vacuum gap distances ranging from 1 to 3 μm. The active area in the samples through which heat is transferred is ∼1 cm2, indicating the scalable nature of these structures. A clear experimental path exists to realize switching ratios as large as 100%, laying the foundation for electronic control of near-field thermal radiation using 2D materials.

Comparing Hall Effect and Field Effect Measurements on the Same Single Nanowire

Abstract: We compare and discuss the two most commonly used electrical characterization techniques for nanowires (NWs). In a novel single-NW device, we combine Hall effect and back-gated and top-gated field effect measurements and quantify the carrier concentrations in a series of sulfur-doped InP NWs. The carrier concentrations from Hall effect and field effect measurements are found to correlate well when using the analysis methods described in this work. This shows that NWs can be accurately characterized with available electrical methods, an important result toward better understanding of semiconductor NW doping.

Determination of the density of states of a-Si:H using the field effect

Abstract: We have devised a new iterative computer method for obtaining N(E), the density of gap states, from field effect data without using simplifying approximations. Our analysis shows that equally good fits to the data can be obtained over a range of values of the ratio of electron and hole contributions to the conductivity in the bulk and of the field voltage needed to obtain flat bands. We find that the present experimental accuracy is not sufficient to discern detailed structure in N(E). the validity of assuming a parallel shift of the mobility edge with the potential near the interface is being questioned. Field effect data on undoped glow-discharge a-Si:H subjected to the Staebler-Wronski cycle of illumination and heat treatment are presented and analyzed. We find N(E F ) ∼ 10 17 e V −1 cm −3 and lower N(E) below the gap center.