Field effect

About: Field effect is a research topic. Over the lifetime, 4018 publications have been published within this topic receiving 92613 citations.

A Three-State Nanofluidic Field Effect Switch

Abstract: We report a three-state nanofluidic field effect switch in an asymmetrically gated device with a forward (positive), off (zero), and a reverse (negative) current state for tunable control of ionic transport by systematically controlling the gate potential. The embedded gate electrode allows for modulation of the ionic current through the 16 nm deep channels as a function of electrolyte concentration and gate electrode location for a fixed streamwise potential.

High-resolution field effect sensing of ferroelectric charges.

Abstract: Nanoscale manipulation of surface charges and their imaging are essential for understanding local electronic behaviors of polar materials and advanced electronic devices. Electrostatic force microscopy and Kelvin probe force microscopy have been extensively used to probe and image local surface charges responsible for electrodynamics and transport phenomena. However, they rely on the weak electric force modulation of cantilever that limits both spatial and temporal resolutions. Here we present a field effect transistor embedded probe that can directly image surface charges on a length scale of 25 nm and a time scale of less than 125 μs. On the basis of the calculation of net surface charges in a 25 nm diameter ferroelectric domain, we could estimate the charge density resolution to be as low as 0.08 μC/cm2, which is equivalent to 1/20 electron per nanometer square at room temperature.

The Characteristic Improvement of Si (111) Metal–Oxide–Semiconductor Field-Effect Transistor by Long-Time Hydrogen Annealing

Abstract: In this study, the characteristic improvement of Si (111) metal–oxide–semiconductor field-effect transistor (MOSFET) by decreasing the interface states has been investigated. As a process step for this characteristic improvement, long-time annealing in hydrogen ambient was performed after complementary MOS (CMOS) fabrication. It is found from the evaluated results that the interface state density of the Si (111) MOS structure decreases markedly upon increasing the annealing time. Furthermore, the S-factor and mobility of (111) MOSFETs were improved markedly. In particular, the field effect mobility of a (111) p-MOSFET was higher than that of a (100) p-MOSFET in spite of its possessing large interface states. It has been experimentally confirmed for the first time that long-time hydrogen annealing is an essential and effective process for the fabrication of (111) MOSFETs with a standard Si–SiO2 system.

Electric Field Breakdown of Lateral Schottky Diodes of Diamond

Abstract: Current–voltage characteristics of Al lateral Schottky diodes fabricated on homoepitaxial diamond (100) films were analyzed. The currents in reverse-bias voltages smaller and larger than 3 V were well explained by the image-force lowering mechanism modified by localized-field enhancement and the thermionic-field emission mechanism, respectively. An electric field breakdown was observed when the maximum electric field was in the range 1.08–1.46 MV/cm. The breakdown electric field became large with increasing the Schottky barrier height. These features suggest that the electric field breakdown occurred at the electrode fringe due to the field enhancement.

Improvement of terahertz field effect transistor detectors by substrate thinning and radiation losses reduction.

Abstract: Phenomena of the radiation coupling to the field effect transistors based terahertz (THz) detectors are studied. We show that in the case of planar metal antennas a significant portion of incoming radiation, instead of being coupled to the transistors, is coupled to an antenna substrate leading to responsivity losses and/or cross-talk effects in the field effect based THz detector arrays. Experimental and theoretical investigations of the responsivity versus substrate thickness are performed. They clearly show how to minimize the losses by the detector/ array substrate thinning. In conclusion simple quantitative rules of losses minimization by choosing a proper substrate thickness of field effect transistor THz detectors are presented for common materials (Si, GaAs, InP, GaN) used in semiconductor technologies.