Field-effect transistor

About: Field-effect transistor is a research topic. Over the lifetime, 56755 publications have been published within this topic receiving 1035049 citations. The topic is also known as: FET & unipolar transistor.

Dithienopyrrole-containing copolymers

Abstract: Dithienopyrrole-containing copolymers, and organic semiconductors formed therefrom, used as p-type and donor compounds in semiconductors for organic photovoltaic (OPV) applications, such as solar cells or transistors, such as organic field effect transistors (OFET). Organic semiconductors formed herein have a low bandgap and high absorbance, increasing the efficiency of a transistor or a solar cell. Such dithienopyrrole-containing copolymers also have excellent hole-conductivity which may be even further improved through oxidation.

Power factor correction converter with current regulated output

Abstract: A power factor correction converter in a buck-boost configuration may include a set-up circuit configured to supply an input voltage, a buck transistor connected to the set-up circuit, and configured to receive a current from the diode bridge, a first diode connected to the buck transistor, a boost transistor, a resistor connected to the boost transistor, a coil that connects the buck transistor and the boost transistor, a buck-boost PFC regulator connected to the set-up circuit, and configured to regulate a time pattern of the on/off status of the first transistor and the second transistor synchronously, a second diode connected to the coil and the boost transistor, and configured to output a first level voltage, a capacitor connected to the second diode and a load connected to the second diode.

Semiconductor device and a method of making the same

Abstract: Semiconductor device of the field effect transistor type including a first semiconductor region of one conductivity type, a second semiconductor region abutting the first region and containing at least one polycrystalline region and one single crystal region, the polycrystalline region having a conductivity type opposite to that of the first semiconductor region thereby forming a PN junction therealong, and a third semiconductor region formed in the second semiconductor region.

Field effect transistor bias circuit

Abstract: A field effect transistor amplifier having a bootstrap bias voltage circuit which is isolated from the output. Isolation of the bootstrap bias voltage circuit allows a plurality of amplifiers to be connected in series to provide a higher bootstrap bias voltage than could be provided by a single bootstrap bias voltage circuit.

Method of producing a silicon gate insulated-gate field effect transistor

Abstract: A method is disclosed for fabricating an insulated gate field effect transistor having a silicon gate electrode. The silicon gate electrode is covered with a first insulating layer. That layer as well as the surfaces of the source and drain regions are thereafter covered with a second insulating layer. The second insulating layer is selectively removed to expose a portion of the first insulating layer covering the silicon gate electrode and a part of the surfaces of the source and drain regions. Source and drain electrodes are then respectively applied to the source and drain regions without the possibility of a drain-togate or source-to-gate short circuit.