scispace - formally typeset
Search or ask a question
Topic

Field-effect transistor

About: Field-effect transistor is a research topic. Over the lifetime, 56755 publications have been published within this topic receiving 1035049 citations. The topic is also known as: FET & unipolar transistor.


Papers
More filters
Journal ArticleDOI
TL;DR: A new type of transistor in which there are no junctions and no doping concentration gradients is proposed and demonstrated, which has near-ideal subthreshold slope, extremely low leakage currents, and less degradation of mobility with gate voltage and temperature than classical transistors.
Abstract: All existing transistors are based on the use of semiconductor junctions formed by introducing dopant atoms into the semiconductor material. As the distance between junctions in modern devices drops below 10 nm, extraordinarily high doping concentration gradients become necessary. Because of the laws of diffusion and the statistical nature of the distribution of the doping atoms, such junctions represent an increasingly difficult challenge for the semiconductor industry. Here, we propose and demonstrate a new type of transistor in which there are no junctions and no doping concentration gradients. These devices have full CMOS functionality and are made using silicon nanowires. They have near-ideal subthreshold slope, extremely low leakage currents, and less degradation of mobility with gate voltage and temperature than classical transistors.

2,090 citations

Journal ArticleDOI
09 Nov 2001-Science
TL;DR: It is shown that crossed nanowire p-n junctions and junction arrays can be assembled in over 95% yield with controllable electrical characteristics, and in addition, that these junctions can be used to create integrated nanoscale field-effect transistor arrays with nanowires as both the conducting channel and gate electrode.
Abstract: Miniaturization in electronics through improvements in established “top-down” fabrication techniques is approaching the point where fundamental issues are expected to limit the dramatic increases in computing seen over the past several decades Here we report a “bottom-up” approach in which functional device elements and element arrays have been assembled from solution through the use of electronically well-defined semiconductor nanowire building blocks We show that crossed nanowire p-n junctions and junction arrays can be assembled in over 95% yield with controllable electrical characteristics, and in addition, that these junctions can be used to create integrated nanoscale field-effect transistor arrays with nanowires as both the conducting channel and gate electrode Nanowire junction arrays have been configured as key OR, AND, and NOR logic-gate structures with substantial gain and have been used to implement basic computation

2,087 citations

Journal ArticleDOI
29 Oct 1999-Science
TL;DR: A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated and molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin- film transistors.
Abstract: Organic-inorganic hybrid materials promise both the superior carrier mobility of inorganic semiconductors and the processability of organic materials A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated Hybrids based on the perovskite structure crystallize from solution to form oriented molecular-scale composites of alternating organic and inorganic sheets Spin-coated thin films of the semiconducting perovskite (C(6)H(5)C(2)H(4)NH(3))(2)SnI(4) form the conducting channel, with field-effect mobilities of 06 square centimeters per volt-second and current modulation greater than 10(4) Molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin-film transistors

1,887 citations

01 Jan 1982
TL;DR: In this article, the authors present a method for extracting interface trap properties from the conductance of a metal oxide Silicon Capacitor at intermediate and high frequency intervals, and demonstrate that these properties can be used for charge trapping in the oxide.
Abstract: Introduction. Field Effect. Metal Oxide Silicon Capacitor at Low Frequencies. Metal Oxide Silicon Capacitor at Intermediate and High Frequencies. Extraction of Interface Trap Properties from the Conductance. Interfacial Nonuniformities. Experimental Evidence for Interface Trap Properties. Extraction of Interface Trap Properties from the Capacitance. Measurement of Silicon Properties. Charges, Barrier Heights, and Flatband Voltage. Charge Trapping in the Oxide. Instrumentation for Measuring Capacitor Characteristics. Oxidation of Silicon--Oxidation Kinetics. Oxidation of Silicon--Technology. Control of Oxide Charges. Models of the Interface. Appendices. Subject Index. Symbol Index.

1,855 citations

Journal ArticleDOI
TL;DR: By replacing the standard insulator with a ferroelectric insulator of the right thickness it should be possible to implement a step-up voltage transformer that will amplify the gate voltage thus leading to values of S lower than 60 mV/decade and enabling low voltage/low power operation.
Abstract: It is well-known that conventional field effect transistors (FETs) require a change in the channel potential of at least 60 mV at 300 K to effect a change in the current by a factor of 10, and this minimum subthreshold slope S puts a fundamental lower limit on the operating voltage and hence the power dissipation in standard FET-based switches. Here, we suggest that by replacing the standard insulator with a ferroelectric insulator of the right thickness it should be possible to implement a step-up voltage transformer that will amplify the gate voltage thus leading to values of S lower than 60 mV/decade and enabling low voltage/low power operation. The voltage transformer action can be understood intuitively as the result of an effective negative capacitance provided by the ferroelectric capacitor that arises from an internal positive feedback that in principle could be obtained from other microscopic mechanisms as well. Unlike other proposals to reduce S, this involves no change in the basic physics of the FET and thus does not affect its current drive or impose other restrictions.

1,722 citations


Network Information
Related Topics (5)
Silicon
196K papers, 3M citations
93% related
Thin film
275.5K papers, 4.5M citations
90% related
Band gap
86.8K papers, 2.2M citations
89% related
Quantum dot
76.7K papers, 1.9M citations
89% related
Photoluminescence
83.4K papers, 1.8M citations
88% related
Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023405
2022801
2021849
20201,285
20191,435
20181,435