Topic
Field-effect transistor
About: Field-effect transistor is a research topic. Over the lifetime, 56755 publications have been published within this topic receiving 1035049 citations. The topic is also known as: FET & unipolar transistor.
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TL;DR: The role of extended and point defects, and key impurities such as C, O, and H, on the electrical and optical properties of GaN is reviewed in this article, along with the influence of process-induced or grown-in defects and impurities on the device physics.
Abstract: The role of extended and point defects, and key impurities such as C, O, and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation, and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes, and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.
1,693 citations
TL;DR: In this article, the materials, charge-transport, and device physics of solution-processed organic field-effect transistors are reviewed, focusing in particular on the physics of the active semiconductor/dielectric interface.
Abstract: Field-effect transistors based on solution-processible organic semiconductors have experienced impressive improvements in both performance and reliability in recent years, and printing-based manufacturing processes for integrated transistor circuits are being developed to realize low-cost, large-area electronic products on flexible substrates. This article reviews the materials, charge-transport, and device physics of solution-processed organic field-effect transistors, focusing in particular on the physics of the active semiconductor/dielectric interface. Issues such as the relationship between microstructure and charge transport, the critical role of the gate dielectric, the influence of polaronic relaxation and disorder effects on charge transport, charge-injection mechanisms, and the current understanding of mechanisms for charge trapping are reviewed. Many interesting questions on how the molecular and electronic structures and the presence of defects at organic/organic heterointerfaces influence the device performance and stability remain to be explored.
1,651 citations
IBM1
TL;DR: These nanocrystal field-effect transistors allow reversible switching between n- and p-transport, providing options for complementary metal oxide semiconductor circuits and enabling a range of low-cost, large-area electronic, optoelectronic, thermoelectric, and sensing applications.
Abstract: Initially poorly conducting PbSe nanocrystal solids (quantum dot arrays or superlattices) can be chemically "activated" to fabricate n- and p-channel field effect transistors with electron and hole mobilities of 0.9 and 0.2 square centimeters per volt-second, respectively; with current modulations of about 10(3) to 10(4); and with current density approaching 3 x 10(4) amperes per square centimeter. Chemical treatments engineer the interparticle spacing, electronic coupling, and doping while passivating electronic traps. These nanocrystal field-effect transistors allow reversible switching between n- and p-transport, providing options for complementary metal oxide semiconductor circuits and enabling a range of low-cost, large-area electronic, optoelectronic, thermoelectric, and sensing applications.
1,638 citations
TL;DR: In this paper, an alpha-power-law MOS model that includes the carrier velocity saturation effect, which becomes prominent in short-channel MOSFETs, is introduced and closed-form expressions for the delay, short-circuit power, and transition voltage of CMOS inverters are derived.
Abstract: An alpha -power-law MOS model that includes the carrier velocity saturation effect, which becomes prominent in short-channel MOSFETs, is introduced. The model is an extension of Shockley's square-law MOS model in the saturation region. Since the model is simple, it can be used to handle MOSFET circuits analytically and can predict the circuit behavior in the submicrometer region. Using the model, closed-form expressions for the delay, short-circuit power, and transition voltage of CMOS inverters are derived. The delay expression includes input waveform slope effects and parasitic drain/source resistance effects and can be used in simulation and/or optimization CAD tools. It is found that the CMOS inverter delay becomes less sensitive to the input waveform slope and that short-circuit dissipation increases as the carrier velocity saturation effect in short-channel MOSFETs gets more severe. >
1,596 citations
TL;DR: This method, which eliminates exposure of the fragile organic surface to the hazards of conventional processing, enables fabrication of rubrene transistors with charge carrier mobilities as high as ∼15 cm2/V·s and subthreshold slopes as low as 2nF·V/decade·cm2.
Abstract: We introduce a method to fabricate high-performance field-effect transistors on the surface of freestanding organic single crystals. The transistors are constructed by laminating a monolithic elastomeric transistor stamp against the surface of a crystal. This method, which eliminates exposure of the fragile organic surface to the hazards of conventional processing, enables fabrication of rubrene transistors with charge carrier mobilities as high as approximately 15 cm2/V.s and subthreshold slopes as low as 2nF.V/decade.cm2. Multiple relamination of the transistor stamp against the same crystal does not affect the transistor characteristics; we exploit this reversibility to reveal anisotropic charge transport at the basal plane of rubrene.
1,593 citations