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Film plane

About: Film plane is a research topic. Over the lifetime, 2841 publications have been published within this topic receiving 44009 citations.


Papers
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Journal ArticleDOI
03 Sep 1993-Science
TL;DR: Arrays of ferromagnetic nickel and cobalt nanowires have been fabricated by electrochemical deposition of the metals into templates with nanometer-sized pores prepared by nuclear track etching, displaying distinctive characteristics because of their one-dimensional microstructure.
Abstract: Arrays of ferromagnetic nickel and cobalt nanowires have been fabricated by electrochemical deposition of the metals into templates with nanometer-sized pores prepared by nuclear track etching. These systems display distinctive characteristics because of their one-dimensional microstructure. The preferred magnetization direction is perpendicular to the film plane. Enhanced coercivities as high as 680 oersteds and remnant magnetization up to 90 percent have also been observed.

1,146 citations

Journal ArticleDOI
TL;DR: In this paper, the authors investigated the electrical conduction mechanism in the film plane of ultrathin, evaporated metal films and showed that the conductivity depends exponentially on reciprocal temperature, and it should be independent of field at low fields.
Abstract: The electrical conduction mechanism in the film plane of ultrathin, evaporated metal films was investigated. These films consist of a planar array of many small discrete islands. The conduction process consists of, first, charge carrier creation which is thermally activated and involves charge transfer between initially neutral particles, and, second, the drift velocity of these charges in an applied field. Charge transfer between particles occurs by tunneling. The following features were predicted and can be verified experimentally: the conductivity depends exponentially on reciprocal temperature, and it should be independent of field at low fields. Deviations from the exponential temperature dependence can be understood in terms of a spectrum of activation energies, while deviations from Ohm's law at high fields can be explained readily in terms of a field dependent activation energy.

699 citations

Patent
14 Feb 2011
TL;DR: A magnetoresistive element according to an embodiment includes: a first ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a second nonmagnetic layer placed between the first and the second magnetoresists; and a second interfacial magnetic layer between the second and the nonmagians as mentioned in this paper.
Abstract: A magnetoresistive element according to an embodiment includes: a first ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a second ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a nonmagnetic layer placed between the first ferromagnetic layer and the second ferromagnetic layer; a first interfacial magnetic layer placed between the first ferromagnetic layer and the nonmagnetic layer; and a second interfacial magnetic layer placed between the second ferromagnetic layer and the nonmagnetic layer The first interfacial magnetic layer includes a first interfacial magnetic film, a second interfacial magnetic film placed between the first interfacial magnetic film and the nonmagnetic layer and having a different composition from that of the first interfacial magnetic film, and a first nonmagnetic film placed between the first interfacial magnetic film and the second interfacial magnetic film

600 citations

Journal ArticleDOI
TL;DR: In this article, the magneto-optical (MO) polar Kerr effect of Co/Pt multilayers was investigated on glass or Si substrates, and it was shown that the Kerr effect increases towards shorter wavelengths and thus favors future higher density recording.
Abstract: We prepared by vapor deposition at room temperature thin (500 A) Co/Pt multilayers or layered structures directly onto glass or Si substrates. They show a preferential magnetization perpendicular to the film plane for Co thicknesses below 12 A and a 100% perpendicular remanence for Co thicknesses below 4.5 A. The magnetic anisotropy can be explained by an interface contribution to the anisotropy. We also investigated the magneto‐optical (MO) polar Kerr effect of these multilayers. Because of their excellent magnetic properties and their potentially high oxidation and corrosion resistance, these Co/Pt‐layered structures are very promising candidates for MO recording. The Kerr rotation θk at λ=820 nm for a 35×(4.0 A Co+12.7 A Pt)‐layered structure, which has 100% magnetic remanence, is modest (−0.12°), but the reflectivity R is high (70%), which results in a respectable figure of merit Rθ2k. Furthermore, the Kerr effect increases towards shorter wavelengths and thus favors future higher‐density recording.

532 citations

Journal ArticleDOI
14 Jun 2002-Science
TL;DR: Epitaxially twinned a axis–oriented La-substituted Bi4Ti3O12 (BLT) thin films whose spontaneous polarization is entirely along the film normal were grown by pulsed laser deposition on yttria-stabilized zirconia-buffered Si(100) substrates using SrRuO3 as bottom electrodes.
Abstract: The use of bismuth-layered perovskite films for planar-type nonvolatile ferroelectric random-access memories requires films with spontaneous polarization normal to the plane of growth. Epitaxially twinned a axis–oriented La-substituted Bi4Ti3O12 (BLT) thin films whose spontaneous polarization is entirely along the film normal were grown by pulsed laser deposition on yttria-stabilized zirconia-buffered Si(100) substrates using SrRuO3 as bottom electrodes. Even though the (118) orientation competes with the (100) orientation, epitaxial films with almost pure (100) orientation were grown using very thin, strained SrRuO3 electrode layers and kinetic growth conditions, including high growth rates and high oxygen background pressures to facilitate oxygen incorporation into the growing film. Films with the a-axis orientation and having their polarization entirely along the direction normal to the film plane can achieve a remanent polarization of 32 microcoulombs per square centimeter.

503 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20236
202214
202124
202037
201941
201840