Showing papers on "Fluence published in 1974"
TL;DR: In this article, low energy helium ions have been injected into 304 stainless steel, polycrystalline nickel foil and single crystal nickel targets and the gas evolution rate monitored during post-bombardment annealing.
36 citations
TL;DR: In this article, vanadium samples were irradiated at the reactor ambient temperature to fluences in the range from 2.0 × 107 to 1.5 × 1019 n/cm2, to approximately 25 kg/mm 2 for the highest fluence.
21 citations
TL;DR: In this paper, the authors described and presented results of an experiment measuring the fluence and absorbed dose delivered by electron accelerator-produced muons penetrating thick iron shields, which was designed to check the theoretical calculations described in the preceding paper.
19 citations
TL;DR: In this paper, the surface charge scattering mobility was found to have a temperature and surface charge dependence of T−0.5/N SC, and the reduction in channel mobility arises from scattering at neutron-produced bulk-centers.
Abstract: Studies of channel mobility reduction in P channel MOSFETS with gamma and/or neutron irradiation are reported. For pure gamma irradiation, the reduction in mobility is caused by increased surface charge scattering. The surface charge scattering mobility is found to have a temperature and surface charge dependence of T−0.5/N SC . For pure neutron irradiation, the reduction in channel mobility arises from scattering at neutron-produced bulk-centers. In reactor neutron irradiations, gamma fluence can be as important as the neutron fluence in reducing channel mobility.
11 citations
4 citations
TL;DR: In this paper, the depletion layer capacitance against bias voltage has shown a plateau which is dependent on proton fluence and energy, which is consistent with the proposed model in which the induced defects act as acceptors and compensate donor ions in the proton range.
Abstract: Silicon surface barrier detectors have been irradiated with 0.5–2 MeV protons to observe the radiation damage effects appearing in electrical properties. The depletion layer capacitance against bias voltage has shown a plateau which is dependent on proton fluence and energy. This behavior is consistently explained by the proposed model in which the induced defects act as acceptors and compensate donor ions in the proton range. The effective number of defects is estimated to be about 0.2 per 1 MeV proton.
3 citations
TL;DR: In this paper, it was shown that the plateau observed by Lucasson and coworkers in the resistivity versus fluence curve during electron irradiation of pre-quenched metals can be explained in terms of radiation-induced diffusion of vacancies.
1 citations