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Fluence
About: Fluence is a research topic. Over the lifetime, 6156 publications have been published within this topic receiving 94486 citations.
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TL;DR: In this paper, the authors investigated the fluence dependence of the ablation yield, the temperature and pressure evolution in the target, and the Ablation mechanism in the case of 0.5 ps UV laser irradiation of copper.
Abstract: We investigate picosecond laser ablation of metals using a hybrid simulation scheme. Laser energy input into the electron system and heat conduction within it are modeled using a finite-difference scheme for solving the heat conduction equation. Atom motion in the near-surface part ~72 nm! of the sample is modeled using molecular dynamics. Energy transfer between the electronic and atomic subsystems due to electron-phonon coupling is taken into account. For the special case of 0.5 ps UV laser irradiation of copper, we investigate the fluence dependence of the ablation yield, the temperature and pressure evolution in the target, and the ablation mechanism.
254 citations
TL;DR: In this article, a single-pulse ablation threshold value was estimated to be φth(1) = 0.16 J/cm2 and the dependence of the threshold fluence on the number of laser pulses indicates an incubation effect.
Abstract: Ablation of indium phosphide wafers in air was performed with low repetition rate ultrashort laser pulses (130 fs, 10 Hz) of 800 nm wavelength. The relationships between the dimensions of the craters and the ablation parameters were analyzed. The ablation threshold fluence depends on the number of pulses applied to the same spot. The single-pulse ablation threshold value was estimated to be φth(1)=0.16 J/cm2. The dependence of the threshold fluence on the number of laser pulses indicates an incubation effect. Morphological and chemical changes of the ablated regions were characterized by means of scanning electron microscopy and Auger electron spectroscopy.
251 citations
TL;DR: In this article, the femtosecond laser ablation properties of borosilicate glass using atomic force microscopy and laser pulses of 200 fs duration, centered at 780 nm wavelength, were determined by studying the diameter and the depth of single-shot ablated craters.
Abstract: We study the femtosecond laser ablation properties of borosilicate glass using atomic force microscopy and laser pulses of 200 fs duration, centered at 780 nm wavelength. We show that both single-shot and multishot ablation threshold fluences can be determined by studying the diameter and the depth of single-shot ablated craters. The linear relationship between the square of the crater diameter and the logarithm of the laser fluence in the form of D2=2w02ln(F0∕FthN=1) provides the single-shot ablation threshold, FthN=1, whereas the linear relationship between the ablation depth and the logarithm of laser fluence in the form of ha=αeff−1ln(F0∕FthN>1) provides the multishot ablation threshold, FthN>1. The results depict a multishot ablation threshold of ≈1.7J∕cm2 independent of the atmospheric conditions. The slopes of the linear fits also provide a precise estimate of the beam radius at the surface, w0≈5.9μm, and the “effective optical penetration depth,” αeff−1≈238nm in air. The method is systematic, prov...
245 citations
TL;DR: In this article, it was shown that annealing these samples in flowing O2 at 1000 °C for times up to 30 min results in oxidation of the Si nanocrystals, first close to the SiO2 surface and later at greater depths.
Abstract: Si nanocrystals (diameter 2–5 nm) were formed by 35 keV Si + implantation at a fluence of 6 × 1016 Si/cm2 into a 100 nm thick thermally grown SiO2 film on Si (100), followed by thermal annealing at 1100 °C for 10 min. The nanocrystals show a broad photoluminescence spectrum, peaking at 880 nm, attributed to the recombination of quantum confined excitons. Rutherford backscattering spectrometry and transmission electron microscopy show that annealing these samples in flowing O2 at 1000 °C for times up to 30 min results in oxidation of the Si nanocrystals, first close to the SiO2 film surface and later at greater depths. Upon oxidation for 30 min the photoluminescence peak wavelength blueshifts by more than 200 nm. This blueshift is attributed to a quantum size effect in which a reduction of the average nanocrystal size leads to emission at shorter wavelengths. The room temperature luminescence lifetime measured at 700 nm increases from 12 µs for the unoxidized film to 43 µs for the film that was oxidized for 29 min.
234 citations
TL;DR: In this paper, a simple photochemical mechanism in which one photon or less (on average) is absorbed per monomer is shown to be insufficient for significant ablation at 248 nm.
Abstract: Pulsed laser radiation at 193, 248, or 308 nm can etch films of polyimide (DuPont KaptonTM). The mechanism of this process has been examined by the chemical analysis of the condensible products, by laser‐induced fluorescence analysis of the diatomic products, and by the measurement of the etch depth per pulse over a range of fluences of the laser pulse. The most important product as well as the only one condensible at room temperature is carbon. Laser‐induced fluorescence analysis showed that C2 and CN were present in the ablation plume. At 248 nm, even well below the fluence threshold of 0.08 J/cm2 for significant ablation, these diatomic species are readily detected and are measured to leave the polymer surface with translational energy of ∼5 eV. These results, when combined with the photoacoustic studies of Dyer and Srinivasan [Appl. Phys. Lett. 48, 445 (1986)], show that a simple photochemical mechanism in which one photon or less (on average) is absorbed per monomer is inadequate. The ablation proces...
228 citations