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Showing papers on "Focused ion beam published in 1973"



Journal ArticleDOI
TL;DR: The generation of high-current pulsed ion beams with ion energy in the range 0.5-10 MeV appears to be possible by modifications of present electron-beam technology as mentioned in this paper.
Abstract: The generation of high-current (\ensuremath{\sim}${10}^{5}$ A) pulsed ion beams with ion energy in the range 0.5-10 MeV appears to be possible by modifications of present electron-beam technology.

110 citations


Journal ArticleDOI
TL;DR: In this article, an improved form of a new type of electrostatic ion gun, which is suitable for ion etching and ion thinning, is described, and it is shown that the device has three main modes of operation, namely an ''oscillating mode', a ''transition mode'' and a ''general glow discharge mode''.
Abstract: An improved form of a new type of electrostatic ion gun, which is suitable for ion etching and ion thinning, is described. It is shown that the device has three main modes of operation, namely an `oscillating mode', a `transition mode' and a `general glow discharge mode'. An explanation of these modes, together with the intensity and profile of the emerging ion beam obtained in each case, is given. It is suggested that advantage can be taken of these effects in specific applications.

23 citations


Journal ArticleDOI
TL;DR: In this paper, the authors discuss the production of secondary ions, the various types of instrumentation used, and applications of the ion probe technique, and the application of secondary ion images.

20 citations


Journal ArticleDOI
TL;DR: In this article, an ion beam probing technique was developed to measure the electron temperature in a magnetically confined plasma, involving the use of two akali metal ion beams, provided accurate measurements of electron temperatures below 100 eV.
Abstract: An ion beam probing technique has been developed to measure the electron temperature in a magnetically confined plasma. The technique, involving the use of two akali metal ion beams, provides accurate measurements of electron temperatures below 100 eV.

15 citations


Journal ArticleDOI
TL;DR: In this article, the influence of the length of the ion source outlet, the source pressure, and the source magnetic field on the properties of an ion beam was investigated and a variation of the outlet length conditions can be deduced for optimum design with respect to gas efficiency and profile shape.
Abstract: Beam profile measurements have been carried out to study the influence of the length of the ion source outlet, the source pressure, and the source magnetic field on the properties of an ion beam. From a variation of the outlet length conditions can be deduced for optimum design with respect to gas efficiency and profile shape. The profile width is found to decrease with increasing source pressure and decreasing magnetic field. This effect is attributed to a corresponding change in the energy distribution of the ions. Profile distortions occurring at high source pressure are likely to be due to ion scattering in the extraction region.

10 citations



Patent
Itiro Omura1, Tadao Kaneko1
22 Jan 1973
TL;DR: In this paper, the authors describe a crystal growing apparatus consisting of a Knudsen cell source of the surface ionization type, focusing means to focus, on a crystal substrate, an ion beam emitted from the ion source, deflection means to deflect the ion beam, detection means to detect the quantity of the ionbeam, an electron gun to generate an electron beam which neutralizes ions focused on the crystal substrate and a quadrupole mass filter to evaluate the ratio of partial pressure of the neutralized molecules within a vacuum specimen chamber.
Abstract: A crystal growing apparatus comprises a Knudsen cell source of the surface ionization type, focusing means to focus, on a crystal substrate, an ion beam emitted from the ion source, deflection means to deflect the ion beam, detection means to detect the quantity of the ion beam, an electron gun to generate an electron beam which neutralizes ions focused on the crystal substrate, and a quadrupole mass filter to evaluate the ratio of partial pressure of the neutralized molecules within a vacuum specimen chamber in which the crystal substrate exists, the ion beam being scanned on the substrate by the deflection means.

5 citations


Journal ArticleDOI
A.M. Ghander1, RK Fitch1
01 Aug 1973-Vacuum
TL;DR: In this paper, the twin anode electrostatic ion source has been modified to produce two separate ion beams of equal intensity, which can be used to ion etch two specimens at the same time under identical conditions of beam density, ion energy and pressure.

5 citations


Journal ArticleDOI
TL;DR: In this paper, a steady state, dc discharge, electrostatically focused ion beam source with permanent magnet multipole confinement was described, which is suitable for investigating ion beam-plasma interactions.
Abstract: A steady state, dc discharge, electrostatically focused ion beam source with permanent magnet multipole confinement is described. The ion beam is low density, nb [inverted lazy s] 108 cm−3, low divergence, θ [inverted lazy s] 1°, energetic, Vb≤5 kV, and is suitable for investigating ion beam‐plasma interactions. Ion beam speed and species are determined either by modulating the beam and analyzing the resulting free‐streaming perturbations or by a pulse and time‐of‐flight technique. The amplitude of the free‐streaming signal is enhanced in the electron cyclotron harmonic passbands due to the decreased dielectric function of the background plasma. Two beam‐plasma instabilities, the electron cyclotron drift instability, and an instability at the lower hybrid frequency are observed using this ion source.

5 citations


Journal ArticleDOI
20 Jul 1973-Shinku
TL;DR: In this article, a fine diameter and low aperture angle ion beam was used as a fine metal ion source and a mass analyzer of target material, which reached a normalized brightness of 2×10-94.6×1010 A/m2 ·rad2.
Abstract: If a metal target is bombarded by the high power density electron beam, the target material are made to evaporate and the evaporated atoms will be ionized by collision with the incident electrons. As these ions have lower energy than several electron volts, the incident electron beam can trap these ions in the potential valley of space charges. The trapped ions are diffused and accelerated toward the electron cathode which have the hole in the centre (in practice the spirally wound tantalum wire was used). And the ions are taken out through this cathode hole.Ion beams got by above process have fine diameter and low aperture angle, then the brightness of ion beam become higher in itself though the total ion current is not so high.Several metals as Cr, Si, Mg-Al alloy and others were used as targets. In the case of Mg-Al target the values of normalized brightness of the ion beam reached the order of 2×10-94.6×1010 A/m2 ·rad2. And the masses of ion beam components were analyzed by using the circular pole magnet.This ion gun will be usable as a fine metal ion source and a mass analyzer of target material.

Journal ArticleDOI
H Boroffka1, H Runge1
01 Dec 1973-Vacuum
TL;DR: In this paper, a fast-switching device for ion implantation is described, which allows for a switching time constant of about 2 ms and no ions of other species can reach the target.


01 Feb 1973
TL;DR: In this paper, a beam sampling method is used to measure local heat flux to a small platinum wire at steady state; integration of power density profiles leads to a determination of equivalent neutral beam current.
Abstract: A technique and instrument design for calorimetric detection of the neutral atom content of a 60 keV argon ion beam. A beam sampling method is used to measure local heat flux to a small platinum wire at steady state; integration of power density profiles leads to a determination of equivalent neutral beam current. The fast neutral production occurs as a result of charge transfer processes in the region of the beam system between analyzing magnet and beam stop where the pressure remains less than .00001 torr. A description of the neutral beam detector is given in section along with a presentation of results. An elementary analysis of sputter material transport from target to substrate was performed; the analysis relates to semiconductor sputtering.

Journal ArticleDOI
TL;DR: In this paper, a simple technique of measurement of ion pressure which is created when accelerated ions strike a solid target is presented, where the authors deal with the simple problem of measuring ion pressure.