Showing papers on "Focused ion beam published in 1977"
TL;DR: In this article, the design and characteristics of a low-energy ion beam deposition system are discussed, where metal ions with an energy of 100 eV are deposited onto the substrate at a current density of 4-5 µA/cm2.
Abstract: The design and characteristics of a low-energy ion beam deposition system are discussed. In the system, metal ions with an energy of 100 eV are deposited onto the substrate at a current density of 4–5 µA/cm2. Germanium single crystalline films are deposited on germanium (111) and silicon (111) substrate at substrate temperatures above 300°C. In the case of deposition below 200°C, films are found to be amorphous and re-crystallized by annealing above 300°C. When the ion energy over 500 eV is used, sputtering of the substrate is dominant and deposition is not observed for Ge+ ions and the silicon substrate combination. The results demonstrated the feasibility of growing thin film by low-energy ion beam deposition.
63 citations
52 citations
TL;DR: In this article, a model is proposed to predict the partial pressure of oxygen at which a dielectric film forms, based on the thermodynamic properties of the compound formed, which suggests that compound formation occurs at the target and that the oxide is sputtered in the collision process.
32 citations
TL;DR: In this paper, the ion beam sputtering technique offers several advantages over conventional sputtering systems, such as lower pressure and substrate temperature, and the ability to vary the grain size and the angle of deposition.
24 citations
TL;DR: In this article, a self-pinched electron beam is focused onto a thin-wall spherical target, and the energy deposition per unit mass is 5 times larger than for a similar beam interacting with a thick target.
Abstract: When a 1-MV, 315-kA, self-pinched electron beam is focused onto a thin-wall spherical target, the energy deposition per unit mass is 5 times larger than for a similar beam interacting with a thick target. Numerical modeling of the electron flow in the diode indicates that modification of electric and magnetic fields and electron trajectories by the target produces multiple passes through a thin target and an increase in beam electron density in the target. This produces the enhanced energy deposition in the target.
20 citations
Patent•
19 May 1977
TL;DR: In this paper, a method of making a pattern for a photolithographic mask was proposed, where a field ion source was used to produce heavy ions with a high beam current density.
Abstract: A method of making a pattern for a photolithographic mask. A field ion source is advantageously utilized to produce heavy ions with a high beam current density. The ions are accelerated and directly bombard a metallic coating on the mask substrate to form openings therein in the desired pattern.
19 citations
TL;DR: Using an apparatus previously described in which a beam of argon ions is collimated and focused by an electrostatic lens onto an appropriate target, various applications of ion beam sputtering to high resolution electron microscopy have been studied as discussed by the authors.
17 citations
TL;DR: In this paper, it was shown that the current which can be fed through the aperture depends strongly upon the operation parameters of the ion source and that the maximum current transmitted is limited by space charge expansion of the beam.
15 citations
TL;DR: In this paper, it was shown that an ion beam of significant intensity can be generated by an electron gun of the type commonly used in Auger electron spectroscopy, and that the ion beam produced simultaneously can significantly influence adsorption behavior.
Abstract: Measurements are reported which demonstrate that an ion beam of significant intensity can be generated by an electron gun of the type commonly used in Auger electron spectroscopy. When adsorption experiments are performed in the presence of an electron beam, the ion beam produced simultaneously can significantly influence adsorption behaviour. As an example, the effect is illustrated for the GaAs-O2 system.
12 citations
TL;DR: In this article, the ionisation of boron is considered in some detail because of its particular importance as a dopant for ion implantation, and a table of recommended operational procedures for most elements is included.
9 citations
Patent•
[...]
TL;DR: An ion beam apparatus applies an ion beam emitted from a gaseous ion source to a solid material which constitutes a solid ion source, and Ions of the solid material are emitted from the ion beam as a result of the application of the exciting ion beam and are extracted by an extracting electrode as mentioned in this paper.
Abstract: An ion beam apparatus applies an ion beam emitted from a gaseous ion source to a solid material which constitutes a solid ion source. Ions of the solid material are emitted from the solid material as a result of the application of the exciting ion beam and are extracted by an extracting electrode and applied to a specimen.
TL;DR: In this article, a concept for a high-density memory-storage device is described, where information is recorded as small implanted p+ (or n+) diodes, formed by a focused ion beam, on the n+(or p+) surface of a large area diode and read by focused electron beam.
Abstract: A concept for a high‐density memory‐storage device is described. Information is recorded as small implanted p+ (or n+) diodes, formed by a focused ion beam, on the n+ (or p+) surface of a large‐area diode and read by a focused electron beam. Preliminary experimental results using ion implantation through an aperture mask to simulate a focused ion beam, and a scanning electron microscope for readout, demonstrate better than 0.5‐μ bit spacing. Evaluation indicates that 1010 bits/cm2 storage density is possible, with ≳10 Mbits/sec write/read rates, and access times <30 μsec to 1011‐bit data fields.
TL;DR: In this paper, the usual limitations on extracted ion current and energy partition with electrons can be relaxed for an ion source operated with a non-stationary sheath, where the ion source can be operated with or without a battery.
01 Jan 1977
TL;DR: The ion microprobe mass analyzer (IMMA) is a comparatively recent tool which permits mass spectroscopic analysis on a microscale as mentioned in this paper, where secondary ions which are analyzed are generated in the sample surface.
Abstract: The ion microprobe mass analyzer (IMMA) is a comparatively recent tool which permits mass spectroscopic analysis on a microscale. IMMA analyzes secondary ions induced by bombarding the target with a high energy primary ion beam. The method is sensitive to all elements in the periodic table and in most cases this sensitivity is better than 1 ppm. The secondary ions which are analyzed are generated in the sample surface, hence the method is a surface characterization method. By successively sputtering material from the surface it is possible to monitor the thickness of surface layers with resolutions of a few tens of angstroms and at the same time to perform depth profile analyses for specific elements. The primary ion beam may be focused to a probe approximately 1 μm in diameter and thus particulate contamination of the sample surface may also be analyzed. Organic materials, too, may be identified in this method provided a suitable standard of the suspect material is available. There are, however, some limitations in the general application of the ion probe to unknown organic materials principally due to the high energy of the primary ion beam. Some examples of the application of the ion microanalyzer to surface characterization problems will be described.
TL;DR: In this paper, a new technique for producing monoenergetic ion beams in a longitudinal tandem mass spectrometer was proposed, where an ion swarm, produced by a pulsed electron beam, is accelerated impulsively and then subjected to a further accelerating field as it begin to leave the ionization region.