Showing papers on "Focused ion beam published in 1989"

The Physics and technology of ion sources

Abstract: PrefaceList of Contributors1 Introduction (Ian Brown)2 Plasma Physics (Ian Brown)21 Introduction22 Basic Plasma Parameters221 Particle Density222 Fractional Ionization223 Particle Temperature224 Particle Energy and Velocity225 Collisions23 The Plasma Sheath231 Debye Length232 Charge Neutrality233 Plasma Oscillations24 Magnetic Field Effects241 Gyro Orbits242 Gyro Frequencies243 Magnetic Confinement244 Magnetic and Plasma Pressure25 Ionization251 Electron Impact Ionization252 Multiple Ionization253 Photoionization254 Ion Impact Ionization255 Negative Ions256 Field Ionization3 Elementary Ion Sources (Ian Brown)31 Introduction32 Terminology33 The Quintessential Ion Source34 Ion Beam Formation35 Ion Beam Parameters36 An Example37 Conclusion4 Computer Simulation of Extraction (Peter Spdtke)41 Introduction42 Positive Ion Sources421 Filament Driven Cusp Sources422 Duoplasmatrons and Duopigatrons423 Vacuum Arc Ion Sources424 Laser Ion Sources425 ECR Ion Sources426 Penning Ion Sources43 Negative Ion and Electron Sources431 Hot Cathode Electron Sources432 Plasma Electron Sources433 H- Sources44 Conclusion5 Ion Extraction (Ralph Hollinger)51 Introduction52 Fundamentals of Ion Beam Formation in the Extraction System53 Beam Quality54 Sophisticated Treatment of Ion Beam Formation in the Extraction System55 Multi-Aperture Extraction Systems56 Starting Conditions6 Beam Transport (Peter Spdtke and Ralph Hollinger)61 Introduction611 Drift612 Extraction System and Acceleration Gap613 Low Energy Beam Line62 Current Effects63 Space-Charge Compensation631 Residual Gas Collisions632 Sputtering633 Preserving Space Charge Compensation634 Influence of Space Charge Compensation64 A LEBT System for the Future Proton Linac at GSI641 Compound System642 Pentode or Two-Gap System643 Triode System and DCPost-A cceleration644 Discussion7 High Current Gaseous Ion Sources (Nikolai Gavrilov)71 Introduction72 Basic Types of High Current Ion Sources721 Filament Driven Ion Sources722 High-Frequency Ion Sources723 Cold Cathode Ion Sources73 Conclusion8 Freeman and Bernas Ion Sources (Marvin Farley, Peter Rose, and Geoffrey Ryding)81 Introduction82 The Freeman Ion Source83 The Bernas Ion Source84 Further Discussion of the Source Plasma841 Plasma and Sheath Potentials842 Effect of Sputtering on the Plasma843 Ion Heating of the Cathode and Anticathode in the Bernas Source844 Current Balance in the Freeman Source845 Current Balance in the Bernas Source85 Control Systems851 Freeman and Bernas Controls852 Bernas Indirectly Heated Cathode86 Lifetime and Maintenance Issues861 Use of BF3862 Use of PH3, AsH3, P4, and As4863 Use of Sb, Sb2O3, and SbF3864 Use of SiF4 and GeF4865 General Guidelines for the Use of Other Organic and Inorganic Compounds866 Electrode Cleaning and Maintenance867 Insulator Cleaning and Maintenance9 Radio-Frequency Driven Ion Sources (Ka-Ngo Leung)91 Introduction92 Capacitively Coupled RF Sources93 Inductively Coupled RF Sources931 Source Operation with an External RF Antenna932 Multicusp Source Operation with Internal RF Antenna933 Increasing the Ion Beam Brightness of a Multicusp RF Source with Internal Antenna934 Multicusp Source Operation with External RF Antenna94 Applications of RF Ion Sources10 Microwave Ion Sources (Noriyuki Sakudo)101 Introduction102 Microwave Plasma in Magnetic Fields1021 Plasma Parameter Changes due to Magnetic Field and Microwave Frequency1022 High Density Plasma at Off-Resonance103 Some Practical Ion Source Considerations1031 Microwave Impedance Matching to the Plasma1032 High Current Ion Beams Extracted from an Off-Resonance Microwave Ion Source104 Versatility of Beam Extraction1041 Large Cross Sectional Beam formed by a Multi-Aperture Extractor1042 Slit-Shaped Beam for Ion Implantation1043 Further Improvements in Slit-Shaped Beams1044 Compact Microwave Ion Sources105 Diversity of Available Ion Species106 Microwave Ion Sources for Commercial Implanters1061 Semiconductor Device Fabrication1062 SOI Wafer Fabrication107 Conclusion11 ECR Ion Sources (Daniela Leitner and Claude Lyneis)111 Introduction112 Brief History of the Development of ECR Ion Sources113 The LBNL ECR Ion Sources1131 The AECR-U Ion Source1132 The VENUS ECR Ion Source114 Physics and Operation of ECR Ion Sources1141 Electron Impact Ionization1142 Charge Exchange1143 Plasma Confinement1144 ECR Heating1145 Gas Mixing115 Design Considerations116 Microwave and Magnetic Field Technologies117 Metal Ion Beam Production1171 Direct Insertion1172 Sputtering1173 Gaseous or Volatile Compounds (MIVOC Method)1174 External Furnaces (Ovens)1175 Efficiencies118 Ion Beam Extraction from ECR Ion Sources1181 Influence of Magnetic Field and Ion Temperature on the Extracted Ion Beam Emittance1182 Influence of Plasma Confinement on Beam Emittance119 Conclusion12 Laser Ion Sources (Boris Sharkov)121 Introduction122 Basics of Laser Plasma Physics123 General Description1231 Laser Characteristics1232 Target Illumination System1233 Target Ensemble1234 Pulse Width and Target-Extractor Separation1235 Extraction System1236 Low Energy Beam Transport Line (LEBT)124 Beam Parameters1241 Current Profile1242 Charge State Distribution1243 Beam Emittance1244 Pulse Stability and Source Lifetime125 Sources at Accelerators1251 The LIS at ITEP-TWAC1252 The LIS at CERN1253 The LIS at JINR Dubna126 Other Operating Options1261 High Current, Low Charge State Mode1262 Influence of Magnetic Field on the Laser Ion Source Plasma127 Conclusion13 Vacuum Arc Ion Sources (Efim Oks and Ian Brown)131 Introduction132 Background133 Vacuum Arc Plasma Physics134 Principles of Operation135 Beam Parameters1351 Beam Current1352 Beam Profile, Divergence and Emittance1353 Beam Composition1354 Beam Noise, Pulse Stability, and Lifetime136 Recent Improvements in Parameters and Performance1361 Enhancement of Ion Charge States1362 Alternative Triggering of the Vacuum Arc1363 Reduction in Ion Beam Noise and Increased Pulse Stability1364 Generation of Gaseous Ions137 Source Embodiments1371 LBNL Mevva Sources1372 HCEI Titan Sources1373 NPI Raduga Sources1374 GSI Varis Sources1375 Other Versions and Variants138 Conclusion14 Negative Ion Sources (Junzo Ishikawa)141 Introduction142 Surface Effect Negative Ion Sources1421 Negative Ion Production by Surface Effect1422 Surface Effect Light Negative Ion Sources1423 Surface Effect Heavy Negative Ion Sources143 Volume Production Negative Ion Sources1431 Negative Ion Formation by Volume Production1432 History of Source Development1433 Recent Volume Production Negative Ion Sources144 Charge Transfer Negative Ion Sources1441 Negative Ion Production by Charge Transfer1442 History of Charge Transfer Negative Ion Sources145 Conclusion15 Ion Sources for Heavy Ion Fusion (Joe Kwan)151 Introduction1511 Heavy Ion Beam Driven Inertial Fusion1512 HIF Ion Source Requirements152 Beam Extraction and Transport1521 Scaling Laws for Beam Extraction and Transport1522 Large Beam vs Multiple Small Beamlets153 Surface Ionization Sources1531 Contact Ionizers1532 Aluminosilicate Sources1533 Surface Ionization Sources for HIF154 Gas Discharge Ion Sources for HIF155 Pulsed Discharge Sources1551 Metal Vapor Vacuum Arc Sources for HIF1581 Laser Ion Sources for HIF156 Negative Ion Sources for HIF157 HIF Injector Designs1571 Large Diameter Source Approach1572 Merging Multiple Beamlets Approach158 Conclusion16 Giant Ion Sources for Neutral Beams (Yasuhiko Takeiri)161 Introduction162 Large Volume Plasma Production1621 Bucket Plasma Sources with Multi-Cusp Magnetic Field1622 Plasma Modeling1623 Atomic Fraction163 Large Area Beam Extraction and Acceleration1631 Electrode Systems for Large Area Beams1632 Beamlet Steering164 Giant Positive Ion Sources165 Giant Negative Ion Sources1651 Operational Principles of Negative Ion Sources1652 Negative Ion Extraction and Acceleration1653 Giant Negative Ion Sources166 Future Directions of DevelopmentAppendicesAppendix 1: Physical ConstantsAppendix 2: Some Plasma ParametersAppendix 3: Table of the ElementsIndex

Handbook of ion beam processing technology

Abstract: The work presented in this book deals with ion beam processing for basic sputter etching of samples, for sputter deposition of thin films, for the synthesis of material in thin form, and for the modification of the properties of thin films. The ion energy range covered is from a few tens of eV to about 10,000 eV, with primary interest in the range of about 20 to 1-2 keV, where implantation of the incident ion is a minor effect. Of the types of ion sources and devices available, this book examines principally broad beam ion sources, characterized by high fluxes and large work areas. These sources include the ECR ion source, the Kaufman-type single- and multiple-grid sources, gridless sources such as the Hall effect or closed-drift source, and hydrid sources such as the ionized cluster beam system.

Diamond films and method of growing diamond films on nondiamond substrates

Abstract: A method of forming a polycrystalline film, such as a diamond, on a foreign substrate involves preparing the substrate before film deposition to define discrete nucleation sites. The substrate is prepared for film deposition by forming a pattern of irregularities in the surface thereof. The irregularities, typically craters, are arranged in a predetermined pattern which corresponds to that desired for the location of film crystals. The craters preferrably are of uniform, predetermined dimensions (in the sub-micron and micron size range) and are uniformly spaced apart by a predetermined distance. The craters may be formed by a number of techniques, including focused ion beam milling, laser vaporization, and chemical or plasma etching using a patterned photoresist. Once the substrate has been prepared the film may be deposited by a number of known techniques. Films prepared by this method are characterized by a regular surface pattern of crystals which may be arranged in virtually any desired pattern. Diamond film materials made by this technique may be used in many electrical, optical, thermal and other applications.

Focused ion beam fabrication of submicron gold structures

Abstract: Because of their ability to both mill and deposit material with submicron resolution, focused ion beams are now used to repair photolithography masks and are of increasing technological interest in the repair of x‐ray lithography masks and in integrated circuit restructuring. With the latter two applications in mind, we have fabricated milled and deposited Au features with linewidths of ≤0.1 μm using a 40 keV Ga focused ion beam. In addition, we present the results of a study parameterizing focused ion beam induced Au deposition under conditions of practical interest. Milling is accomplished by simple physical sputtering. Examples of milled microfeatures include a grating with a 210 nm period milled through a 5000 A thick evaporated Au film. Deposition is accomplished by ion bombarding a SiO2 substrate on which a precursor gas, dimethyl gold hexafluoro acetylacetonate, is continuously being adsorbed. Examples of deposited Au features include a 3×3 μm patch 1‐μm‐thick with steep sidewalls. The deposition r...

Method and apparatus for high efficiency scanning in an ion implanter

Abstract: An ion beam scanning method and apparatus produce a parallel, scanned ion beam with a magnetic deflector having, in one instance, wedge-shaped pole pieces that develop a uniform magnetic field. A beam accelerator for the scanned beam has a slot-shaped passage which the scanned beam traverses. The beam scan and the beam traverse over a target object are controlled to attain a selected beam current and corresponding ion dose on a target object. Methods and apparatus are disclosed for increasing ion beam utilization efficiency without adversely effecting dose accuracy.

Phase coherence length of electron waves in narrow AlGaAs/GaAs quantum wires fabricated by focused ion beam implantation

Abstract: The phase coherence length Lφ of electron waves in the one‐dimensional weak localization regime was studied in selectively doped AlGaAs/GaAs quantum wires fabricated by focused ion beam implantation Estimated Lφ by fitting the modified weak localization theory to the data is ∼12 μm at 03 K, nine times longer than in the n‐GaAs wires This difference is well explained by the mobility dependence of Lφ, and shows the advantage of selectively doped structures to obtain long Lφ Lφ increased with decreasing temperature and saturated below ∼3 K, indicating the existence of temperature‐independent phase breaking mechanisms

Method for repairing semiconductor masks and reticles

Abstract: Apparatus and method for repairing semiconductor masks and reticles is disclosed, utilizing a focused ion beam system capable of delivering, from a single ion beam column, several different species of focused ion beams, each of which is individually optimized to meet the differing requirements of the major functions to be performed in mask repair. This method allows the mask to be imaged with high resolution and minimum mask damage. Opaque defects are removed by sputter etching at high rates with minimum damage to the mask substrate, and clear defects are filled in at high rates directly from the beam by deposition of a metallic or other substance compatible with the mask materials. A focused ion beam column able to produce precisely focused ion beams is employed and is operated at high energies for imaging and sputter etching, and at low energies for imaging and deposition. A liquid metal alloy source containing suitable atomic species is employed.

Focused ion beam imaging and process control

Abstract: Ion beam machining apparatus utilizes a focused ion beam for sputtering a target, an electron source for charge neutralization of the target, photon detectors for detecting photo-emissions during sputtering, and an output module responsive to the photon detectors for locating the impingement site of the ion beam within the target, based on detection of transitions between different material constituents within the target. The focused ion beam can be scanned in selected patterns about a predetermined sputtering region of the target, and the output module can include imaging elements for generating an image of the target in response to detected photo-emissions.

Surface Figuring Using Neutral Ion Beams

Abstract: During recent years, economic and technological pressures have driven research for higher performance optical fabrication techniques. Among the candidate figuring technologies is ion beam sputtering in which material is removed from the optical surface by the kinetic interaction of ions and atoms or molecules of the surface. The first use of sputtering as a means for optical figuring occurred in the mid 1960's [1,2], and the technique has been investigated by several groups since that time. The prior work was done primarily with ion sources producing high energy (20KeV and above), low current (fraction of a milliampere), narrow (usually less than one millimeter) ion beams. The low current directly translates to low removal rates, while the high energy contributes to radiation damage, ion implantation, and other effects. In the present work the low current, high energy source is replaced with a Kaufman broad-beam ion source[3]. These sources produce higher ion currents at lower energies, thus giving faster removal with minimal surface damage. The ion beam produced by a Kaufman ion source consists of a number of ions traveling in a (typi-cally) slightly diverging beam, along with an equal flux of lower energy electrons. The electrons are injected into the ion beam to reduce electrostatic repulsion in the beam, but also to prevent the charging of dielectric targets.

Radio frequency ion beam source

Abstract: A monoenergetic ion source for the generation of an ion beam is described with the ion energies which lie below 100 eV and also above 5 keV being capable of being freely selected so that the whole range of intermediate energies and independently of the selected ion current density with the aid of the operating parameters of the source. The ion current density is so freely adjustable independently of the ion energy. The ion source is provided with an optical beam focussing system and can in particular also be used to produce metal ions. This ion source also makes a special coating process possible which is likewise described here.

Focused ion beam induced deposition of low‐resistivity gold films

Abstract: Focused ion beam induced deposition of metals has up to now produced films with resistivities 30–5000 times higher than bulk values for metals because of high concentrations of impurities from the precursor gas incorporated into the films. We have demonstrated for the first time deposition of submicron Au films with resistivities approaching that of the bulk metal and carbon contents of <10 at. %. These results are particularly relevant to applications in integrated circuit restructuring and x‐ray lithography mask repair, where high film conductivity and purity improves interconnect quality and x‐ray opacity.

High‐resolution patterning of high Tc superconductors

Abstract: We have used a 20 keV Ga focused ion beam to pattern superconducting submicrometer bridge structures in thin films of Ba2YCu3O7 material by physical sputtering. The technique can produce structures down to 0.5 μm or less in epitaxial films with no degradation in superconducting transition temperature (Tc) or critical current density (Jc). Photolithography was used to define a coarse pattern of 20‐μm‐wide and 50‐μm‐long strips, each wired for four‐terminal resistance measurements. Submicrometer constrictions were then milled by the focused ion beam to form weak‐link junctions with roughly 0.3 μm separating the superconducting banks. We have demonstrated that focused ion beam micromachining is capable of producing submicrometer‐sized superconducting structures.

Electron Beam Testing

Abstract: Publisher Summary The term “Electron Beam Testing” means the testing of electrical properties of a circuit or an electron device by using the electron beam The commercial electron beam tester uses the probing action of an electron beam, and it can resolve 01 μ m spatially and subnanosecond in time Its voltage sensitivity reaches 10 mV It, however, needs: (i) high initial cost and (ii) high skill in testing This chapter discusses how the electron beam is used and the information that can be derived from it The main topic is the scan-display methods where the electron beam is used as a probe Furthermore, the contactless current feedings are discussed followed by the voltage contrast that is the key technology in the electron beam testing The electron beam testing is not completely nondestructive; the irradiation effects are also reviewed The chapter also discusses the phenomena that the electron optical column differs in some respects from a usual scanning electron microscope

Method of etching a semiconductor device by an ion beam

Abstract: A method of etching a semiconductor device having multi-layered wiring by an ion beam is disclosed which method comprises the steps of: extracting a high-intensity ion beam from a high-density ion source; focusing the extracted ion beam; causing the focused ion beam to perform a scanning operation by a voltage applied to a deflection electrode; forming a first hole in the semiconductor device by the focused ion beam to a depth capable of reaching an insulating film formed between upper and lower wiring conductors so that the first hole has a curved bottom corresponding to the undulation of the upper wiring conductor, and the upper wiring conductor is absent at the bottom of the first hole; and scanning a portion of the bottom of the first hole with the focused ion beam to form a second hole in the insulating film to a depth capable of reaching the lower wiring conductor, thereby preventing the shorting between the upper and lower wiring conductors. Further, a method of forming a hole of a predetermined shape at a surface area having a step-like portion of a semiconductor device by an ion beam is disclosed which method comprises a pre-etching step of scanning the high-level region of the step-like portion with the ion beam so that the high-level region becomes equal in level to the low-level region of the step-like portion, and a main step of scanning the whole of the surface area with the ion beam till the hole of the predetermined shape is formed in the semiconductor device.

New applications of focused ion beam technique to failure analysis and process monitoring of VLSI

Abstract: The applications presented are: (1) microscopic selective cross-sectioning and in situ observation of the cross section; and (2) the observation of aluminum microstructure. These applications make failure analysis techniques simpler and less time-consuming. >

Characterization of subsurface damage in GaAs processed by Ga+ focused ion‐beam‐assisted Cl2 etching using photoluminescence

Abstract: Subsurface damage in GaAs processed by a Ga+ focused ion‐beam‐assisted Cl2 etching is studied by photoluminescence (PL) measurement. The PL intensity of the processed sample decreased to (1)/(30) – (1)/(40) compared to that of the unprocessed sample. The recovery of PL intensity by a step removal of the damaged layer is observed as a function of the removed layer thickness. The removal of a 0.7‐μm‐thick surface layer enables the PL intensity to be recovered perfectly, which leads to the postulate that the damaged layer thickness is 0.7 μm at least, which is much larger than the ion range (about 0.01 μm). The recovery of PL intensity is analyzed on a one‐dimensional model in the direction normal to the sample surface. Computer simulations of PL intensity are carried out. The calculated result fully explains the experimental PL intensity recovery as a function of the removed layer thickness, which gives the profile of subsurface damage in the sample.

Simple ion milling preparation of 〈111〉 tungsten tips

Abstract: Ion milling of single‐crystal tungsten 〈111〉 wire results in a steady‐state faceted tip which is sharp on a near‐atomic scale. The self‐limiting nature of the process makes preparation particularly simple and therefore useful for applications such as scanning tunneling microscope tips, focused ion beam sources, etc.

Implantation enhanced interdiffusion in GaAs/GaAlAs quantum structures

Abstract: A high‐energy (up to 150 keV) Ga+ focused ion beam is used to implant quantum well structures and interdiffuse GaAs/GaAlAs heterojunctions thus creating quantum wires and boxes. We investigate the optical properties of these structures using low‐temperature cathodoluminescence. Wires as wide as 800 A have been observed 2000 A below the surface. We study the optical damage and the interdiffusion process as a function of the implantation parameters (ion energy ion dose) and as a function of the rapid thermal annealing time. A universal correlation between the optical damage and the interdiffusion length has been found. The optimum process conditions are proposed.

Focused-Ion-Beam Induced Deposition Of Metal For Microcircuit Modification

Abstract: Focused-ion-beam (FIB) machines can now modify integrated circuits by milling disconnects as well as depositing conductive connections on both inter- and intra-level structures with a range of beam sizes. Although FIB sputtering is well developed for photomask and IC repair, FIB deposition of metal has only recently been used to repair actual devices. We have developed a process to deposit films with resistivities of 150 - 220 uohm-cm and at rates of 1 - 2 [angstroms-um2]/[pA-s]. This paper includes a description of FIB induced deposition of tungsten as well as applications which demonstrate the ability of the system to restructure microcircuits for repair and failure analysis.

Ion-beam machining method and apparatus

Abstract: In an ion-beam machining method and apparatus of effecting sputtering by deflecting a focused ion beam and scanning it on a material surface, the relationship between the diameter d of the beam on the material surface and the height h of a stepped portion formed by each beam scan is changed from h≧d to h<

Focused ion beam apparatus having charged particle energy filter

Abstract: A focused ion beam apparatus which has a secondary electron energy filter apparatus. The secondary electron energy filter apparatus is basically composed of an extraction electrode for extracting secondary electrons generated from a sample by irradiating an ion beam thereon, and a grid electrode for discriminting the secondary electrons based on their energy levels. The focused ion beam apparatus is also equipped with a secondary electron detector for detecting secondary electrons which pass the grid electrode, thereby measuring the potential of the surface of the sample under treatment.

Chemically-assisted ion beam milling system for the preparation of transmission electron microscope specimens

Abstract: An ion beam milling system for the preparation of transmission electron microscope specimens suitable for atomic resolution imaging, particularly of III-V and II-VI compound semiconductors and their alloys, is described. The system includes ion beam sources and reactive molecular gas jets which may be operated in combination or separately, as appropriate. A new heated specimen holder, giving greatly increased reaction rates with the molecular gas jet, allows milling angles very close to zero.

Composite apparatus with secondary ion mass spectrometry instrument and scanning electron microscope

Abstract: A composite apparatus is disclosed which includes in combination a secondary ion mass spectrometry instrument and a scanning electron microscope. A liquid metal ion source and an ion source other than the liquid metal ion source are installed in the same apparatus so that an ion beam emitted from the liquid metal ion source and an ion beam emitted from the ion source other than the liquid metal ion source are aligned with each other on a primary beam axis which is an optical axis of an irradiating system. The liquid metal ion source is disposed in rear of a primary ion separating device which mass-separates the ion beam emitted from the ion source other than the liquid metal ion source. Further, an electron gun is installed in the same apparatus so that an electron beam emitted from the electron gun is aligned with the ion beam on the primary beam axis.

Focused Ion Beam Induced Deposition

Abstract: Ion induced deposition is a novel method of thin film growth in which a local gas ambient is created near an ion bombarded surface. The ion bombardment causes the gas molecules to break up and some of the gas constituents to deposit on the surface. If a focused ion beam is used, then this becomes a technique for maskless, resistless, patterned deposition. Depositions of films from gases of Al(CH3)3, WF6 and Ta(OC2H5)2 have been reported. The films for the most part have contained high (approaching 50%) concentrations of impurities such as O or C, presumably due to the lack of ultrahigh vacuum conditions. Gold deposition has been observed from dimethyl gold hexa fluoroacetylacetonate (C7 H7F6 O2 Au), with both focused ion beams and broad beams. In many cases, the gold films are much purer (less than 5% C or O) and have exhibited resistivities from 20 to 1000µΩcm (Bulk gold resistivity is 2.5µΩcm.) Deposition yields (atoms deposited per incident ion) of 4 to 100 have been observed. But the higher yields correlate with higher resistivity and higher impurity content. Preliminary transmission electron microscope examination shows the gold films to start out as unconnected islands of 40 to 60nm dimensions. The mechanisms for the deposition is at present not well understood. Some hypotheses will be discussed. Ion-induced deposition appears to be a promising technique for in-situ deposition of metals or insulators with submicrometer resolution.

Focusing ion beam device

Abstract: PURPOSE: To improve a property of focusing an ion beam, further to make the ion beam capable incidence upon a desired position, by projecting an electron beam in the periphery of an ion incident point in order to neutralize a charge due to the ion beam incident upon a sample, and eliminating an influence by an electric charge with which the sample is charged. CONSTITUTION: An ion, extracted by an extracting electrode 2 from an ion source 1, is focused by an electrostatic lens 5. A focusing ion beam 6 is deflected by a deflecting plate 7 and scanned on a surface of a sample 9 on a stage 8. An outgoing electron from an electron gun 14 is changed in a low energy electron beam 15 by an acceleration power supply 16, to form a sharp electron spot surrounding an ion beam incident point 10. A filament power supply 17 is controlled through a multiplexer control power supply 19 from a computer 18. A secondary electron 25 or secondary ion 26, emitted from the sample 9, is accelerated to hit a mesh electrode 21, and generated secondary electron 27 is further accelerated to hit a phosphor 22, so that fluorescence is detected by a photomultiplier 23 to input a detection output to the computer 18. At irradiation time of the electron beam 15, negative voltage is applied to an electrode 21 through a bias control power supply 24. COPYRIGHT: (C)1995,JPO

Focused ion‐beam crater arrays for induced nucleation of diamond film

Abstract: Diamond thin‐films on nondiamond substrates characteristically exhibit a highly disordered polycrystalline microstructure and poor surface morphology. A major factor involved in this unsatisfactory growth behavior is a very‐low density‐of‐nucleation on most surfaces. It is feasible that ion milling by a focused ion‐beam can be utilized to introduce precise arrays of effective nucleation sites for diamond‐film deposition. Possibilities for improved diamond‐film microstructure and morphology are expected to result.

Preparation and observation method of micro-section

Abstract: The method of preparing and observing a microsection utilizes a focused ion beam device composed of an ion tube for producing a scanned and focused ion beam, a sample stage including an XY displacement mechanism and an inclination mechanism, a gas gun for injecting deposition material gas onto a surface of a sample and a secondary charged particle detector such that the focused ion beam device has three functions, i.e., a scanning ion microscope function, a maskless etching function and a maskless deposition function. The method is directed to sequentially carry out highly accurate preparation of a section in a particular area of the sample and observation of the prepared section according to first step of determining a position of the cutting edge on the sample surface by the scanning ion microscope function, a second step of depositing a film locally on an area containing the cutting edge position by the maskless deposition function, a third step of forming a rectangular groove by the maskless etching function such that one sidewall of the rectangular groove is registered with the cutting edge so as to prepare and expose a section, a fourth step of inclining the sample stage to face the section in an observation direction, and a fifth step of carrying out observation of the section in the formed groove by the scanning ion microscope function.