Showing papers on "Focused ion beam published in 2001"
TL;DR: In this paper, the possibilities of focused ion beam (FIB) applications in microsystem technology are reviewed, and a procedure for cross sectioning on samples is presented, as well as some examples of how this technique can be applied to study processing results.
Abstract: In this paper the possibilities of focused ion beam (FIB) applications in microsystem technology are reviewed. After an introduction to the technology and the operating principles of FIB, two classes of applications are described. First the subject of FIB for microsystem technology inspection, metrology and failure analysis is outlined. A procedure for cross sectioning on samples is presented, as well as some examples of how this technique can be applied to study processing results. The second part of the paper is on the use of FIB as a tool for maskless micromachining. Both subtractive (etching) and additive (deposition) techniques are discussed, as well as the combination of FIB implantation of silicon with subsequent wet etching. We will show the possibility to fabricate three-dimensional structures on a micrometre scale, and give examples of recent realizations thereof.
682 citations
TL;DR: The presented fabrication process allows the integration of an electroactive area at an exactly defined distance above of the end of a scanning probe tip and the subsequent remodeling and sharpening of the original AFM tip using a focused ion beam (FIB) technique.
Abstract: We present a novel approach to develop and process a microelectrode integrated in a standard AFM tip. The presented fabrication process allows the integration of an electroactive area at an exactly defined distance above of the end of a scanning probe tip and the subsequent remodeling and sharpening of the original AFM tip using a focused ion beam (FIB) technique (See ref 1 for patent information). Thus, the functionality of scanning electrochemical microscopy (SECM) can be integrated into any standard atomic force microscope (AFM). With the demonstrated approach, a precisely defined and constant distance between the microelectrode and the sample surface can be obtained, alternatively to the indirect determination of this distance usually applied in SECM experiments. Hence, a complete separation of the topographical information and the electrochemical signal is possible. The presented technique is a significant step toward electrochemical imaging with submicrometer electrodes as demonstrated by the develo...
294 citations
TL;DR: The preparation of transmission electron microscopy cross-section specimens using focused ion beam milling using the “liftout” and “trench” techniques are outlined, and their relative advantages and disadvantages are discussed.
Abstract: The preparation of transmission electron microscopy cross-section specimens using focused ion beam milling is outlined. The “liftout” and “trench” techniques are both described in detail, and their relative advantages and disadvantages are discussed. Artifacts such as ion damage to the top surface and sidewalls of the cross-section specimens, and methods of reducing them, are addressed.
234 citations
TL;DR: The thinnest damaged layer formed on a silicon surface was measured as 1.5 nm thick, while an optimized FIB sample preparation process results in the formation of a 22 nm thick damaged layer.
212 citations
TL;DR: In this paper, focused ion beam (FIB) lift-out technique was used to extract electron transparent specimens with nanometer scale precision for transmission electron microscope (TEM) analysis.
Abstract: Argon ion milling is the conventional means by which mineral sections are thinned to electron transparency for transmission electron microscope (TEM) analysis, but this technique exhibits significant shortcomings. In particular, selective thinning and imaging of submicrometer inclusions during sample milling are highly problematic. We have achieved successful results using the focused ion beam (FIB) lift-out technique, which utilizes a 30 kV Ga + ion beam to extract electron transparent specimens with nanometer scale precision. Using this procedure, we have prepared a number of Earth materials representing a range of structures and compositions for TEM analysis. We believe that FIB milling will create major new opportunities in the field of Earth and planetary materials microanalysis, particularly with respect to ultraprecious mineral and rock samples.
189 citations
TL;DR: In this paper, a combined process of electropolishing, focused-ion-beam lithography, and controlled anodization is used to fabricate anodic alumina films with ordered nanochannels.
Abstract: A combined process of electropolishing, focused-ion-beam lithography, and controlled anodization is used to fabricate anodic alumina films with ordered nanochannels. The ion beam is used to create a hexagonally close-packed lattice of concaves on a polished aluminum surface and the concaves act as pinning points for guiding the growth of nanochannels in the following anodization step. By carefully matching the lattice constant (100 nm) with the anodization voltage, ordered nanochannels with aspect ratio of ∼100 are fabricated. The effects of the ion dose and its corresponding depth of the concaves on the ordering of the nanochannel array are investigated and a minimum depth of 3 nm is found to be necessary for effective guidance of the growth of ordered nanochannels.
159 citations
TL;DR: In this paper, the authors investigated the electroless Cu coating of fly-ash cenosphere particles in detail using focused ion beam spectroscopy (FIB) and X-ray diffraction.
156 citations
TL;DR: In this article, the 3D shapes of individual grains in an extruded FeAl nanocomposite have been determined by a new method of 3D focused ion beam (FIB) tomographic analysis.
133 citations
01 Apr 2001-Precision Engineering-journal of The International Societies for Precision Engineering and Nanotechnology
TL;DR: In this paper, focused ion beam sputtering and ultra-precision machining are combined for fabricating metal alloy microcomponents, and a 20 keV focused gallium ion beam is used to define a number of cutting edges and tool end clearance.
Abstract: This work combines focused ion beam sputtering and ultra-precision machining as a first step in fabricating metal alloy microcomponents. Micro-end mills having ∼25 μm diameters are made by sputtering cobalt M42 high-speed steel and C2 micrograin tungsten carbide tool blanks. A 20 keV focused gallium ion beam is used to define a number of cutting edges and tool end clearance. Cutting edge radii of curvature are less than or equal to 0.1 μm. Micro-end mill tools having 2, 4 and 5 cutting edges successfully machine millimeter long trenches in 6061-T4 aluminum, brass, 4340 steel and polymethyl methacrylate. Machined trench widths are approximately equal to the tool diameters, and surface roughnesses (Ra) at the bottom of micromachined features are ∼200 nm. Microtools are robust and operate for more than 6 h without fracture. Results from ultra-precision machining aluminum alloy at feed rates as high as 50 mm/minute and an axial depth of 1.0 μm are included.
128 citations
TL;DR: In this paper, a static write-read tester was used to read bit patterns on arrays of square islands cut with a focused ion beam into granular perpendicular magnetic recording media.
Abstract: We have written and read bit patterns on arrays of square islands cut with a focused ion beam into granular perpendicular magnetic recording media. Using a static write–read tester, we have written square-wave bit patterns on arrays of islands with sizes between 60 and 230 nm, matching the recording linear density to the pattern period. These measurements reveal the onset of single-domain behavior for islands smaller than 130 nm, in agreement with magnetic force microscope images. The recording performance of patterned regions is systematically compared to that of unpatterned regions.
126 citations
TL;DR: The Young's modulus of diamond-like carbon (DLC) pillars was measured by means of mechanical vibration using scanning electron microscopy as mentioned in this paper, which showed that there was a balance between the DLC growth rate and surface bombardment by the ions, and this played an important role in the stiffness of the pillars.
Abstract: The Young’s modulus of diamond-like carbon (DLC) pillars was measured by means of mechanical vibration using scanning electron microscopy. The DLC pillars were grown using Ga+ focused ion beam-induced chemical vapor deposition with a precursor of phenanthrene vapor. The Young’s modulus of the DLC pillars was around 100 GPa at vapor pressure of 5×10−5 Pa and it had a quality (Q) value of resonance exceeding 1200. There seemed to be a balance between the DLC growth rate and surface bombardment by the ions, and this played an important role in the stiffness of the pillars. Some of the DLC pillars showed a very large Young’s modulus over 600 GPa at low gas pressure conditions.
TL;DR: In this paper, focused ion beam (FIB) instruments for device modification and specimen preparation has become a mainstay in the microelectronics industry and in thin-film characterization, and the role of FIB as a tool to rapidly prepare high quality transmission electron microscopy specimens is particularly significant.
Abstract: The use of focused ion beam (FIB) instruments for device modification and specimen preparation has become a mainstay in the microelectronics industry and in thin film characterization. The role of the FIB as a tool to rapidly prepare high quality transmission electron microscopy specimens is particularly significant. Special attention has been given to FIB milling of Cu and Si in the microelectronics arena. Although FIB applications involving Si have been extremely successful, it has been noted that Cu tends to present significant challenges to FIB milling because of effects such as the development of milling induced topographical features. We show evidence that links the occurrence of milling induced topography to the severity of redeposition. Specifically, Cu, which sputters ∼2.5 times faster than Si, exhibits an increased susceptibility to redeposition related artifacts. In addition, the effects and the mechanism of Ga+ channeling in Cu is used to illustrate that Ga+ channeling reduces the sputtering yield, improves the quality of FIB mill cuts, and improves the surface characteristics of FIB milled Cu. Finally, a technique for improving FIB milling across grain boundaries or interfaces using ion channeling contrast is suggested.
TL;DR: In this paper, focused ion beam (FIB) workstations with spatial resolution of 5-7 nm were used for the semiconductor industry to obtain materials characterization from continually smaller areas.
Abstract: Commercially available focused ion beam (FIB) workstations with spatial resolution of 5–7 nm can prepare specimens with excellent lateral resolution. This capability has been utilized extensively by the semiconductor industry to obtain materials characterization from continually smaller areas. The FIB has been adopted generally as a preparation tool for scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The ability to prepare site-specific specimens that can be removed from the bulk of a sample provides enhanced SEM and TEM analyses and new approaches for other analytical tools. Dedicated scanning transmission electron microscopy (STEM) can provide images through samples several micrometers thick. Auger electron spectroscopy (AES) can analyze with improved ability to identify a small particle. Secondary ion mass spectrometry (SIMS) can provide trace analysis at high mass resolution. Automatic operation of FIB workstations permits the creation of multiple lift-out samples without the presence of an operator. Copyright © 2001 John Wiley & Sons, Ltd.
TL;DR: In this article, the evolution of the surface topography of fused silica during low-energy Ar ion beam sputtering was studied by atomic force microscopy, and the topography was dominated by regular ripple structures with an orientation perpendicular or parallel to the ion beam direction and a characteristic wavelength λ between 30 and 300nm.
TL;DR: In this article, the effective sputter yield of silicon structures was determined as a function of the ion dose, and the shape of nanostructures was further determined by combining the beam shape and the angle dependence of the sputter yields.
Abstract: In this article, some limitations of the processing of structures with dimensions in the nanometer range by focused ion beams will be discussed. In order to enable exact depth control of nanometer structures, the effective sputter yield of silicon was determined as function of the ion dose. At ion doses below 1016 cm−2, the effective sputter yield is not constant and the volume of the area processed increases due to the implantation of ions. Material removal can be measured for doses above 2×1016 cm−2 and it reaches equilibrium for doses of about 3×1017 cm−2. This dose dependence of the effective sputter yield becomes especially effective in beam tail regions with low ion intensity. The shape of nanostructures is further determined by combining the beam shape and the angle dependence of the sputter yield which was experimentally determined. Using this approach with a Gaussian beam shape, a comparison of simulated and measured sidewall angles has shown good agreement for trench structures. Only sidewall regions close to the surface and to the bottom of deep structures show slight deviations. At the surface, non-Gaussian beam tails lead to unintentional sputtering at the corners of the processed area. At the bottom, forward scattered ions lead to higher sputter erosion.
TL;DR: In this paper, a light-guiding defect line running along the center of a Si3N4-air photonic crystal was constructed by a combination of laser interference lithography (LIL) and local focused ion beam assisted deposition.
Abstract: Extended photonic crystal slabs with light-guiding defects have been created by a combination of laser interference lithography (LIL) and local focused ion beam (FIB) assisted deposition. Large area, highly uniform photonic crystal slabs for visible light are thus made possible. The Figure shows a freestanding Si3N4-air photonic crystal with a light- guiding defect line running along the center of the slab (total length = 1 mm).
IBM1
TL;DR: In this article, a focused ion beam was used to directly pattern thin-film granular perpendicular Co/sub 70/Cr/sub 18/Pt/sub 12/ media.
Abstract: We have used a focused ion beam to directly pattern thin-film granular perpendicular Co/sub 70/Cr/sub 18/Pt/sub 12/ media. By cutting trenches /spl sim/6 nm deep in the /spl sim/20 nm media, we have produced square arrays of magnetically isolated islands with periods in the range 65-500 nm. At periods below /spl sim/130 nm we observe only single magnetic domains, which exhibit a rough "checker-board" pattern upon ac demagnetization. We have patterned at densities of over 140 Gbit/in/sup 2/.
TL;DR: 3D deformation maps have exciting implications for the analysis of mechanical deformation of nanocomposites on a sub‐micrometre scale.
Abstract: A new technique for the three-dimensional analysis of subsurface damage of nanocomposites is presented. Cu–Al multilayers, grown epitaxially on (0001)Al2O3 single crystals by ultra high vacuum molecular beam epitaxy, have been deformed by nanoindentation. Systematic slicing and imaging of the deformed region by focused ion beam microscopy enables a 3D data set of the damaged region to be collected. From this 3D data set, profiles of the deformed sub-surface interfaces can be extracted. This enables the deformation of the individual layers, substrate and overall film thickness to be determined around the damage site. These 3D deformation maps have exciting implications for the analysis of mechanical deformation of nanocomposites on a sub-micrometre scale.
TL;DR: In this article, the authors used focused 30-keV Ga+ ions to define small arrays of wires, circles, and elongated hexagons in the size range 100-500 nm.
Abstract: Focused-ion-beam (FIB) milling has been used to structure magnetic nanoelements from 5 nm thick films of permalloy. We have used focused 30-keV Ga+ ions to define small arrays (6 μm×6 μm) of wires, circles, and elongated hexagons in the size range 100–500 nm. High-sensitivity magneto-optical measurements combined with atomic force microscopy show that very high quality magnetic nanostructures can be fabricated by FIB milling even in thin films of soft magnetic materials. This finding could be significant for the future commercialization of certain aspects of magnetic nanotechnology and magnetoelectronics.
TL;DR: Long-period gratings have been made in nonphotosensitive optical fibers by irradiation of the core of a fiber with a focused beam of high-energy protons, and the profile most resembling a sinusoid was found to produce the cleanest transmission spectra.
Abstract: Long-period gratings have been made in nonphotosensitive optical fibers by irradiation of the core of a fiber with a focused beam of high-energy protons. The irradiated fibers exhibit relatively low loss, even before thermal annealing, and possess strongly wavelength-dependent transmission. The absence of a mask provides the opportunity to tailor the grating to a desired profile, and a variety of grating profiles were explored. The profile most resembling a sinusoid was found to produce the cleanest transmission spectra.
TL;DR: In this article, a ripple structure on a diamond surface is created and imaged in real-time by focused ion-beam bombardment, and further examined by atomic force microscopy.
Abstract: Ripple structures on a diamond surface are created and imaged in real time by focused ion-beam bombardment, and further examined by atomic force microscopy. Beyond a critical incidence angle depending on the ion energy, a ripple structure emerges, and its wavelength remains constant until it breaks down at \ensuremath{\sim}75\ifmmode^\circ\else\textdegree\fi{}. The wavelength is independent of the ion flux, but increases linearly with energy. Addition of a conjectured term representing the redistribution of ion-induced surface species to Makeev, Cuerno, and Barab\'asi's equation allows a quantitative description of the wavelength dependence on the incidence angle.
TL;DR: In this article, the local and collective behavior of magnetic arrays fabricated by focused ion beam (FIB) patterning of a Co/Pt multilayer is described, where the arrays comprised 1 μm nonirradiated square elements separated by narrow lines which were written using the FIB.
Abstract: The local and collective behavior of magnetic arrays fabricated by focused ion beam (FIB) patterning of a Co/Pt multilayer is described. The arrays comprised 1 μm nonirradiated square elements separated by narrow lines which were written using the FIB. While the square elements supported perpendicular magnetization, the ion fluence used to write the lines was chosen to make the local magnetization there lie in-plane. Lorentz microscopy showed that lines were approximately 60 nm wide and that the magnetization had the expected orientation. Application of fields perpendicular and parallel to the array showed that the magnetization in the square elements and in the lines could be controlled essentially independently of each other. Magneto-optic microscopy was used to study the behavior of the arrays as a whole. Frustrated checkerboard patterns were observed, whose detailed properties depended to an extent on the fluence used to write the lines.
TL;DR: In this article, an experimental apparatus has been built to measure the elastic modulus and bending strength of LIGA nickel posts using the static cantilever beam bending approach to measure mechanical properties in a direction parallel to the growth direction.
Abstract: An experimental apparatus has been built to measure the elastic modulus and bending strength (modulus of rupture) of LIGA nickel posts. The apparatus uses the static cantilever beam bending approach to measure mechanical properties in a direction parallel to the growth direction. Experimental results are presented for two sets of largely identical posts constructed using an overplating method. One set was electroplated using a Watts bath, and the other set was electroplated using a sulfamate bath. For the Watts bath, the measured modulus of elasticity was slightly lower than that of bulk nickel (182 GPa), while, for the sulfamate bath, it was approximately half (93 GPa). The strength properties of the two sets of posts also differ dramatically. Microhardness measurements, Focused Ion Beam (FIB) images of grain structure, and scanning electron microscopy (SEM) micrographs of failure regions are used to further characterize and explain the differences in the results. This integrated testing approach yields a consistent set of data regarding material properties, grain size/structure and failure mechanisms. Potential sources of experimental error are also identified and improvements in experiment design are suggested to reduce these errors.
TL;DR: In this paper, a cesium sputter ion source has been used to generate novel cluster and monoatomic primary ion beams for secondary ion mass spectrometry (SIMS), and the source produces a variety of primary ion beam species with sufficient flux to be usable for both organic surface analysis and semiconductor depth profiling.
Abstract: A cesium sputter ion source has been used to generate novel cluster and monoatomic primary ion beams for secondary ion mass spectrometry (SIMS). The source produces a variety of primary ion beam species with sufficient flux to be usable for both organic surface analysis and semiconductor depth profiling. The primary focus of this work is on the generation and use of carbon and carbon-containing cluster primary ion beams for SIMS. Stability of the sputter ion source is a few percent over 20 min, has useful lifetimes of weeks to months, and produces total primary ion beam currents for C2− ions, measured at the sample, of >1 μA at an extraction voltage of 10 kV. Larger cluster ions (Cx−x=4–10 and CsCx−x=2–8) are produced with tens of nA of beam current. Due to the divergence of the source, focused beam operation gives current densities under optimal conditions of 0.4–0.5 mA/cm2. Cluster bombardment studies of organic films using carbon clusters Cx−x=1–10 indicate that large enhancements (up to a factor of 80...
TL;DR: In this article, the microstructure and texture of as-deposited and annealed films have been characterized using X-ray, electron backscatter diffraction (EBSD) and focused ion beam (FIB) techniques.
TL;DR: In this paper, cross sections through nanoindents on Si, Ge, and GaAs {001} were examined through transmission electron microscopy, where a focused ion beam workstation was used to machine electron transparent windows through the indents.
Abstract: Cross sections through nanoindents on Si, Ge, and GaAs {001} were examined through transmission electron microscopy. A focused ion beam workstation was used to machine electron transparent windows through the indents. In both Si and Ge there was a transformed zone immediately under the indent composed of amorphous material and a mixture of face-centered-cubic and body-centered cubic crystals. Cracking and dislocation generation were also observed around the transformed zone. In GaAs the dominant deformation mechanism was twinning on the {11} planes. The hardness of these materials is discussed in light of these observations and their macroscopic material properties such as phase transformation pressure.
TL;DR: A new scanning transmission electron microscope has been developed for three-dimensional observations of nanostructures and, using double spherical fulcra, accurate eucentric rotation was achieved.
Abstract: A new scanning transmission electron microscope has been developed for three-dimensional (3D) observations of nanostructures. Using double spherical fulcra, accurate eucentric rotation was achieved. Cylindrical specimens for 3D-observation were prepared by a microsampling technique using a focused ion beam. Copper via-holes of a semiconductor memory device and ZnO particles were observed by the 3D-STEM from different directions, and 3D-data of the ZnO particles were successfully reconstructed in a topography mode.
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TL;DR: In this paper, a thermal probe based on the changes of the electrical resistivity of a nanometer-sized filament with temperature is presented, which is integrated into an atomic force scanning probe piezoresistive type cantilever.
TL;DR: In this paper, the influence of the focused ion beam (FIB) parameters and ambient gas on the sputtering yield, surface morphology and structure modification of these materials was studied using ion microscopy, atomic force microscopy (AFM), measurements of electric resistivity and Raman spectroscopy.
TL;DR: In this article, the focused ion beam (FIB) lift-out technique was used to obtain cross-sections that reveal structure near the silicon interface and hence the surface induced phase transitions could be examined and compared quantitatively with theoretical models.