Topic
Focused ion beam
About: Focused ion beam is a research topic. Over the lifetime, 12154 publications have been published within this topic receiving 179523 citations. The topic is also known as: FIB.
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TL;DR: In this article, the authors demonstrate precise control of domain wall injection using Ga and novel He focused ion beam (FIB) irradiation to locally reduce the anisotropy in part of a Pt/Co/Pt strip.
Abstract: In experiments on current-driven domain wall (DW) motion in nanostrips with perpendicular magnetic anisotropy (PMA), the initial DW preparation is usually not well controlled. We demonstrate precise control of DW injection using Ga and novel He focused ion beam (FIB) irradiation to locally reduce the anisotropy in part of a Pt/Co/Pt strip. DWs experience pinning at the boundary of the irradiated area. This DW pinning is more pronounced at the He irradiation boundary compared to Ga. This is attributed to a better He beam resolution, causing an anisotropy gradient over a much smaller length scale and hence, a steeper energy barrier for the DW. The results indicate that He FIB is a useful tool for anisotropy engineering of magnetic devices in the nanometer range.
65 citations
TL;DR: The precipitation evolution during ageing of a 2101 lean duplex stainless steel was investigated, revealing that the precipitate type and morphology depends on the nature of the grain boundary.
65 citations
Patent•
IBM1
TL;DR: An ion beam sputtering system having a chamber and a target, a substrate, and a movable flux regulator located between the target and the substrate in the chamber is discussed in this article.
Abstract: An ion beam sputtering system having a chamber and a target, a substrate, and a movable flux regulator located between the target and the substrate in the chamber. The position of the movable flux regulator relative to the deposition substrate affects the thickness uniformity of thin films deposited on the substrate in the ion beam sputtering system.
65 citations
TL;DR: In this article, an ion sculpting instrument that enables the controlled fabrication of nanometer-sized structures in solid-state materials is presented. Butler et al. use feedback control for the crafting of structures that define a hole through which a component of the incident ion beam is permitted to pass and be monitored.
Abstract: We report the design of an “ion sculpting” instrument that enables the controlled fabrication of nanometer-sized structures in solid-state materials. The instrument employs a beam of kilo-electron-volt argon ions that impinge on a solid-state membrane containing prefabricated structures such as holes, slits, or cavities whose properties are to be modified. By controlling both the ion beam parameters and sample temperature, the instrument can be adjusted to either deliver or remove material from these articulations, for example opening or closing holes of various shapes. The instrument is unique in its use of feedback control for the crafting of structures that define a hole through which a component of the incident ion beam is permitted to pass and be monitored. Electrostatic ion optics refocus ions transmitted unimpeded through the hole, onto a detector capable of registering single ions. The transmission rate is a direct, real-time measure of the transmitting area that is used as a feedback signal to tr...
65 citations
Patent•
12 Jun 1995TL;DR: In this article, a method for making a specimen for use in observation through a transparent electron microscope, including a step of milling part of the specimen into a thin film part, which can be observed through a microscope, is described.
Abstract: A method for making a specimen for use in observation through a transparent electron microscope, includes a step of milling part of the specimen into a thin film part, which can be observed through a transparent electron microscope, by scanning and irradiating a focused ion beam onto the specimen, a step of observing a mark for detection of a position provided on the specimen as a secondary charged particle image by scanning and irradiating a charged particle beam onto the specimen without irradiating the charged particle beam onto the portion to be milled into the thin film part during the milling, and a step of compensating for positional drift of the focused ion beam during milling in accordance with a result of the observation. The method is carried out by an apparatus which includes irradiation area control means for controlling an irradiation area of the focused ion beam onto the specimen so that a surface of the specimen to be milled into the thin film part is not included in the secondary charged particle image when the secondary charged particle image of the surface, on which the mark for detecting the milling position of the specimen is formed, is displayed by the secondary charged particle image during milling part of the specimen, and compensation means for compensating the positional drift of the focused ion beam during milling in accordance with the mark for detecting the milling position.
64 citations