Focused ion beam

About: Focused ion beam is a research topic. Over the lifetime, 12154 publications have been published within this topic receiving 179523 citations. The topic is also known as: FIB.

Germanium and Silicon Film Growth by Low-Energy Ion Beam Deposition

Abstract: The design and characteristics of a low-energy ion beam deposition system are discussed. In the system, metal ions with an energy of 100 eV are deposited onto the substrate at a current density of 4–5 µA/cm2. Germanium single crystalline films are deposited on germanium (111) and silicon (111) substrate at substrate temperatures above 300°C. In the case of deposition below 200°C, films are found to be amorphous and re-crystallized by annealing above 300°C. When the ion energy over 500 eV is used, sputtering of the substrate is dominant and deposition is not observed for Ge+ ions and the silicon substrate combination. The results demonstrated the feasibility of growing thin film by low-energy ion beam deposition.

A compact broadband microfiber Bragg grating.

Abstract: A sub-10µm long microfiber Bragg grating was nanostructured into a ~1µm-diameter optical microfiber by focused ion beam (FIB) technology. The periodic structures were carved into the microfiber and the large refractive index contrast between glass and air allowed for the formation of strong gratings with only 20 periods. 3D simulation showed a good agreement with the experiment demonstration. This compact device can find applications in a variety of fields ranging from temperature and refractive index sensing to optical communications.

Study of chemically assisted ion beam etching of GaN using HCl gas

Abstract: The use of an Ar ion beam and hydrogen chloride gas in the chemically assisted ion beam etching of GaN grown by metalorganic chemical vapor deposition is reported. Etch rates were investigated as a function of ion beam energy and substrate temperature. Hydrogen chloride gas was found to produce higher etch rates at lower ion beam energies (300 eV) and lower rates at higher energies (600 eV) in comparison to Cl2. Highly anisotropic etch profiles are demonstrated that indicate that the process may be suitable for the fabrication of laser facets and mirrors. Changes in surface stoichiometry resulting from the etching process were also investigated using Auger electron spectroscopy.

Transmission electron microscopy study of the deformation behavior of Cu/Nb and Cu/Ni nanoscale multilayers during nanoindentation

Abstract: Nanoscale metallic multilayers, comprising two sets of materials—Cu/Nb and Cu/Ni—were deposited in two different layer thicknesses—nominally 20 and 5 nm. These multilayer samples were indented, and the microstructural changes under the indent tips were studied by extracting samples from underneath the indents using the focused ion beam (FIB) technique and by examining them under a transmission electron microscope (TEM). The deformation behavior underneath the indents, manifested in the bending of layers, reduction in layer thickness, shear band formation, dislocation crossing of interfaces, and orientation change of grains, has been characterized and interpreted in terms of the known deformation mechanisms of nanoscale multilayers.