Topic
Focused ion beam
About: Focused ion beam is a research topic. Over the lifetime, 12154 publications have been published within this topic receiving 179523 citations. The topic is also known as: FIB.
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TL;DR: In this article, a new fabrication process that involves only focused ion beam etching to create holes in selectively oxidised VCSELs was proposed, achieving a maximum output power of 3.1 mW in the fundamental mode.
Abstract: The single fundamental mode output power of photonic crystal vertical cavity lasers is improved by varying sizes of oxide apertures and defect lasing apertures. A maximum output power of 3.1 mW in the fundamental mode has been achieved with a new fabrication process that involves only focused ion beam etching to create holes in selectively oxidised VCSELs.
63 citations
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TL;DR: In this paper, a thermal diode based on standard silicon processing technology using rectification of phonon transport is demonstrated. But the diode is not an electrical rectifier, it is an element blocking flow in one direction, but letting it pass in the other.
Abstract: A diode is an element blocking flow in one direction, but letting it pass in the other. The most prominent realization of a diode is an electrical rectifier. In this paper, we demonstrate a thermal diode based on standard silicon processing technology using rectification of phonon transport. We use a recently developed detection method to directly visualize the heat flow through such a device fabricated in a thin silicon membrane. The diode consists of an array of differently shaped holes milled into the membrane by focused ion beam processing. In our experiment, we achieve a rectification ratio of the heat current of 1.7 at a temperature of 150?K.
63 citations
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TL;DR: In this paper, the formation and ordering of Ge nanocrystals on a pre-patterned silica layer was investigated and morphological evolution of nanocrystal with different experimental parameters was analyzed.
Abstract: This paper describes the mechanisms of formation and ordering of Ge nanocrystals on a pre-patterned silica layer. In the first part, we investigate the nucleation and growth of Ge nanocrystals during thermal annealing of an amorphous Ge layer. In particular, morphological evolution of nanocrystals with different experimental parameters is analyzed. We show that nanocrystals exhibit a pseudoequilibrium shape independent on annealing conditions; their size and density being only controlled by the deposited thickness of the amorphous layer. This behavior is explained by a nucleus density saturation due to the presence of exclusion zones around critical nuclei. In the second part, we evidence a very nice ordering of Ge nanocrystals inside the focused ion beam (FIB) patterns of a thin silica layer. Preferential nucleation of nanocrystals inside the holes is mainly explained by energetic arguments. In particular, we find that surface free energy is dramatically reduced when nanocrystals are located inside the holes instead of on the flat top surface between the holes. From a kinetic side, preferential nucleation inside the FIB holes should also be favored due to the lower surface diffusion inside the holes.
63 citations
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TL;DR: In this paper, the different stages of the polishing process of polycrystalline tungsten samples were investigated by scanning electron microscopy of both the sample surface and of cross-sections prepared with the help of a focused ion beam.
Abstract: The different stages of the polishing process of polycrystalline tungsten samples were investigated by scanning electron microscopy of both the sample surface and of cross-sections prepared with the help of a focused ion beam It is shown that a distortion layer is present at the sample surface after mechanical fine grinding and even after polishing with diamond suspension, although the sample has a mirror-like finish A sufficiently long chemo-mechanical polishing step using an alkaline colloidal silica suspension was able to remove this distortion layer Although electropolishing produced an even smoother surface, the microstructure quality after chemo-mechanical polishing is comparable to that of an electropolished sample
63 citations
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TL;DR: Focused ion beam (FIB) technique applications to very large scale integration (VLSI) failure analysis are reviewed in this article, where three examples of microscopic cross sectioning and in situ observation on a VLSI chip are presented.
Abstract: Focused ion beam (FIB) technique applications to very large scale integration (VLSI) failure analysis are reviewed. Three examples of microscopic cross sectioning and in situ observation on a VLSI chip are presented. One is a cross section of an electromigration‐induced open circuit. Another shows a pinhole in the SiO2 layer between the metal layer and the substrate. The third shows an open circuit, caused by process anomalies. Five preparation methods for further failure analysis are presented: cutting and connecting metal lines, making holes at insulation layer for electron beam probing, probing pad formation for mechanical and electron beam probing, microscopic cross sectioning for secondary electron miscroscopy observation, and marking for transmission electron spectroscopy observation. FIB was shown to be useful, as an aluminum microstructure observation tool, not only for qualitative observation of aluminum grains, but also for quantitative measurement of aluminum grain orientation. Each example is ...
63 citations