Focused ion beam

About: Focused ion beam is a research topic. Over the lifetime, 12154 publications have been published within this topic receiving 179523 citations. The topic is also known as: FIB.

Direct-write patterning of microstructured porous silicon arrays by focused-ion-beam Pt deposition and metal-assisted electroless etching

Abstract: Photoluminescent porous silicon (PSi) patterns of micrometer dimension were produced by the Pt-assisted electroless etching of Si in 1:1:2 methanol:HF:H2O2 Pt-containing squares with side lengths ranging from 125to20μm were defined by a focused-ion-beam-assisted maskless deposition of Pt from an organometallic precursor, trimethylmethylcyclopentadienyl platinum The Pt-patterned Si samples were then etched to produce photoluminescent pixel arrays with high fidelity transfer of the Pt deposition pattern into luminescent pixels of varying size The morphology of the PSi patterns was correlated with the spatial luminescence characteristics at the individual pixel level Luminescent pixels with feature sizes down to ca 1μm were largely confined to the areas initially coated with Pt, and the morphologies produced within any one set of equal-sized Pt squares were similar For 5-μm pads and larger, the morphologies obtained were an admixture of a porous structure coexisting with deeper heavily etched crater r

Electron beam treatment of non-conducting materials by a fore-pump-pressure plasma-cathode electron beam source

Abstract: In the irradiation of an insulated target by an electron beam produced by a plasma-cathode electron beam source operating in the fore-vacuum pressure range (5‐15 Pa), the target potential is much lower than the electron beam energy, offering the possibility of direct electron treatment of insulating materials. It is found that in the electron beam irradiation of a non-conducting target in a moderately high pressure range, the electron charge on the target surface is neutralized mainly by ions from a volume discharge established between the negatively charged target surface and the grounded walls of the vacuum chamber. This allows the possibility of direct electron beam treatment (heating, melting, welding) of ceramics and other non-conducting and semiconductor materials.

Dynamic range of 106 in depth profiling using secondary‐ion mass spectrometry

Abstract: Limitations in dynamic range previously experienced in SIMS depth profiling are shown to be caused by neutral projectiles present in the primary ion beam. Dynamic ranges of about 106 can be achieved if (i) the final section of the primary beam line and the sample are immersed in a UHV ambient (<10−6 Pa) and (ii) the beam traversing this region is deflected or offset from the gun axis so that energetic neutrals produced in the beam line do not hit the sample.

Formation of visible light emitting porous GaAs micropatterns

Abstract: Pore growth on n-type GaAs (100) can be initiated in 1 M HCl solution by electrochemical polarization of the material anodic to a critical potential value—the pore formation potential (PFP). At surface defects, however, the PFP is significantly lower (shifted cathodically). Focused ion beam, implantation of Si++ was used to create defined patterns in the substrate. At these implant sites, the growth of porous GaAs was selectively achieved by polarization below the overall PFP. From the porous GaAs patterns visible photoluminescence at green-yellow wavelengths can be observed. This technique, thus, allows the production of light emitting porous GaAs micropatterns of arbitrary shape by a direct writing process.