Topic
Focused ion beam
About: Focused ion beam is a research topic. Over the lifetime, 12154 publications have been published within this topic receiving 179523 citations. The topic is also known as: FIB.
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TL;DR: A reliable and highly reproducible way of placing a single or double SiC NW on pre-patterned electrodes by using a focused ion beam and a nanomanipulator to control one-dimensional (1D) nanostructures is developed.
Abstract: Control of one-dimensional (1D) nanostructures is demonstrated in this paper by selectively placing and aligning silicon carbide (β-SiC) nanowires (NWs). We developed a reliable and highly reproducible way of placing a single or double SiC NW on pre-patterned electrodes by using a focused ion beam and a nanomanipulator. 3-ω signals obtained by the four-point-probe method were used in measuring the thermal conductivity of the NWs. The thermal conductivities of the placed single and double β-SiC NWs were obtained at 82 ± 6 W mK − 1 and 73 ± 5 W mK − 1, respectively. The proposed technique offers new possibilities for manipulating and evaluating 1D nanoscale materials.
55 citations
TL;DR: In this paper, a cantilever method of determining complex depth profiles of residual stresses is presented by means of a 840 nm thin Ni film on a Si substrate, which can be applied to crystalline as well as amorphous materials and permits stress profiles on a nanoscale to be determined.
55 citations
TL;DR: In this paper, a maskless sputter etching of Au electrodes using a focused ion beam (FIB) and in-situ monitoring of the etching steps by measuring a current fed to the Au electrodes is presented.
55 citations
TL;DR: In this article, a well-ordered array of pits were prepared on gallium arsenide and silicon wafers using a finely focused ion beam (FFIB) using tapping mode scanning force microscopy (TM-SFM).
Abstract: Well-ordered arrays of pits were prepared on gallium arsenide and silicon wafers using a finely focused ion beam (FFIB). The defect pits on gallium arsenide, examined with tapping mode scanning force microscopy (TM-SFM), had a rim diameter of 60 nm and we
55 citations
TL;DR: In this article, the authors report an effective means to grow nanocrystalline diamond films by increasing the nucleation rate and decreasing the growth rate through the adjustment of the CVD process parameters.
55 citations