Topic
Focused ion beam
About: Focused ion beam is a research topic. Over the lifetime, 12154 publications have been published within this topic receiving 179523 citations. The topic is also known as: FIB.
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TL;DR: In this article, gold nano-layers were deposited onto laser irradiated polyethyleneterephthalate (PET) surfaces using linearly polarized light of a pulsed 248-nm KrF and 157-nm F 2 laser, respectively.
55 citations
TL;DR: FIB cross-section results reveal that pores structures present in the as-deposited MoS2 films provide a reaction highway, which allows the incident atomic oxygen to be able to reach and react with the sulfur at bottom.
Abstract: The erosion mechanism of magnetron sputtered MoS2 films exposed to the atomic oxygen environment was studied and compared with the Ti-doped MoS2 and MoS2/Ti multilayer films. The compositional and structural changes were investigated as a function of incident fluence by Rutherford back scattering (RBS) and focused ion beam combining with scanning electron microscopy (FIB&SEM). The RBS results indicate that the sulfur atoms are eroded by the incident atomic oxygen atoms and the removed sulfur amount increases but the erosion rate decreases with increasing of incident fluence. For pure MoS2 films the erosion process turns to saturate at the end of investigated fluence of 4.8 × 1021 O cm–2, and for Ti-doped and MoS2/Ti multilayer films the saturation of sulfur erosion is much earlier around incident fluence of 5.2 × 1019 and 2.6 × 1019 O cm–2, respectively. FIB cross-section results reveal that pores structures present in the as-deposited MoS2 films provide a reaction highway, which allows the incident atomi...
55 citations
TL;DR: In this paper, a 30 kV focused ion beam was used to engineer defects and tailor the atomic, optoelectronic, and structural properties of monolayer transition metal dichalcogenides (TMDs).
Abstract: Manipulation and structural modifications of 2D materials for nanoelectronic and nanofluidic applications remain obstacles to their industrial-scale implementation. Here, it is demonstrated that a 30 kV focused ion beam can be utilized to engineer defects and tailor the atomic, optoelectronic, and structural properties of monolayer transition metal dichalcogenides (TMDs). Aberrationcorrected scanning transmission electron microscopy is used to reveal the presence of defects with sizes from the single atom to 50 nm in molybdenum (MoS2) and tungsten disulfide (WS2) caused by irradiation doses from 1013 to 1016 ions cm−2. Irradiated regions across millimeter-length scales of multiple devices are sampled and analyzed at the atomic scale in order to obtain a quantitative picture of defect sizes and densities. Precise dose value calculations are also presented, which accurately capture the spatial distribution of defects in irradiated 2D materials. Changes in phononic and optoelectronic material properties are probed via Raman and photoluminescence spectroscopy. The dependence of defect properties on sample parameters such as underlying substrate and TMD material is also investigated. The results shown here lend the way to the fabrication and processing of TMD nanodevices.
55 citations
TL;DR: In this paper, an improved ion beam layer removal method is developed to determine the stress distribution in copper and tungsten-based thin film systems, and the residual stress profiles were determined with a depth resolution of 50nm, employing the ion beam removal method.
55 citations
02 Dec 1995-Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms
TL;DR: In this paper, the sputter theory was applied to transition metal nitrides of group 4, 5 and 6 of the periodic system of elements and the mechanisms involved in texture formation were discussed as a function of the process parameters arrival ratio I A, ion energy and ionic species.
Abstract: The high number of degrees of freedom of the process parameters of ion beam assisted thin film deposition allows the formation of thin films with special features. Among these process parameters are ion energy, ion irradiation intensity, atom condensation rate and ion impact angle. By contrast to plasma deposition methods, these parameters are independent of each other and can be selected over a wide range. By carefully selecting the ratio I A of condensing atoms to impacting ions, the ion energy and the angle of ion incidence, films with a high degree of crystallographic orientation can be formed. To-date several mechanisms for the development of texture are discussed. Among them is the sputter theory which explains the growth of particular planes by sputtering and channeling. In a comparative study, this theory is applied to transition metal nitrides of group 4, 5 and 6 of the periodic system of elements. Based on results of structural measurements, the mechanisms which are involved in texture formation are discussed as a function of the process parameters arrival ratio I A , ion energy and ionic species. It turns out that it is not the ion energy deposited per atom but the momentum transfer per unit volume which correlates with the observed changes in preferred crystal orientation.
54 citations