Focused ion beam

About: Focused ion beam is a research topic. Over the lifetime, 12154 publications have been published within this topic receiving 179523 citations. The topic is also known as: FIB.

Three-Dimensional Nanoimprint Mold Fabrication by Focused-Ion-Beam Chemical Vapor Deposition

Abstract: Three-dimensional diamond-like carbon (DLC) mold fabricated by focused-ion-beam chemical vapor deposition (FIB-CVD) using a precursor of phenanthrene has been applied to a nanoimprint process. Various 3D nanostructure DLC molds have been delineated by FIB-CVD using a computer-controlled pattern generator which is a commercially available pattern generator for electron beam lithography. Then, the molds were imprinted into hydrogen silsequioxane (HSQ) as a material replicated at room temperature. It was confirmed that the 3D mold, after nanoimprint lithography (NIL), kept its original shape, and 3D mold structures were successfully imprinted into HSQ. These results reveal that the 3D mold fabricated by FIB-CVD can be applied to NIL.

Current density profile extraction of focused ion beams based on atomic force microscopy contour profiling of nanodots

Abstract: An approach to the profile extraction of nanoscale focused ion beams is presented. It is based on contour profiling of dots patterned at various ion doses by focused ion beam exposure. While the surface contour depends on the spatial variation of the beam-solid interaction, at no single ion dose the contour reflects the current density profile of the beam itself, due to effects such as target swelling, redeposition, and angle-dependent sputtering yield. Instead, we monitor the surface deviation relative to the unimplanted case as a function of dose for the radial positions of interest, and determine scaling factors for the dose such that the scaled curves coincide for all radial positions in the regions of small milling depths. We apply the method to beam shape determination of 10 and 50 keV focused ion beams using silicon and GaAs as targets and atomic force microscopy as a contour profiling technique. Despite the different irradiation response of silicon and GaAs, the beam profiles evaluated on these substrate materials agree excellently, which demonstrates that our approach is substrate independent. It allows profile extractions of nanoscale focused ion beams with high accuracy and high sensitivity even in the tails of the beams.

Three-dimensional STEM for observing nanostructures

Abstract: A new scanning transmission electron microscope has been developed for three-dimensional (3D) observations of nanostructures. Using double spherical fulcra, accurate eucentric rotation was achieved. Cylindrical specimens for 3D-observation were prepared by a microsampling technique using a focused ion beam. Copper via-holes of a semiconductor memory device and ZnO particles were observed by the 3D-STEM from different directions, and 3D-data of the ZnO particles were successfully reconstructed in a topography mode.

Broadband dielectric microwave microscopy on micron length scales.

Abstract: We demonstrate that a near-field microwave microscope based on a transmission line resonator allows imaging in a substantially wide range of frequencies, so that the microscope properties approach those of a spatially resolved impedance analyzer. In the case of an electric probe, the broadband imaging can be used in a direct fashion to separate contributions from capacitive and resistive properties of a sample at length scales on the order of one micron. Using a microwave near-field microscope based on a transmission line resonator we imaged the local dielectric properties of a focused ion beam milled structure on a high-dielectric-constant Ba0.6Sr0.4TiO3 thin film in the frequency range from 1.3 to 17.4 GHz. The electrostatic approximation breaks down already at frequencies above ∼10 GHz for the probe geometry used, and a full-wave analysis is necessary to obtain qualitative information from the images.