Topic
Focused ion beam
About: Focused ion beam is a research topic. Over the lifetime, 12154 publications have been published within this topic receiving 179523 citations. The topic is also known as: FIB.
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TL;DR: In this article, the dependence of the film properties on the deposition pressure and the type and cleaning conditions of the substrate was investigated by Atomic Force Microscopy (AFM), Focused Ion Beam (FIB) microscopy and X-ray diffraction (XRD).
53 citations
TL;DR: In this article, the aspect ratio of the diamond tips was increased to about 7:1 by focused ion beam milling, maintaining a tip radius of typically 30 nm at the apex.
Abstract: Conductive (boron doped) all diamond tips are best suited for use as electrical probes for scanning probe experiments due to their hardness, chemical inertness, and resistivity against wear. In order to overcome the problems of image distortion induced by the tip shape the aspect ratio of the diamond tips was increased to about 7:1 by focused ion beam milling, maintaining a tip radius of typically 30 nm at the apex. The application of these sharpened tips to conducting atomic force microscopy for local electrical characterization of thin metal–oxide–semiconductor dielectrics is demonstrated. Excess current flow was detected at the transition region between the gate oxide and the bordering field oxide due to oxide thinning introduced by the local oxidation of silicon process.
53 citations
TL;DR: In this article, a Si-based polymer thin films using a heavy ion beam is discussed in terms of energy density deposition along ion tracks. And the difference in size is related to the efficiency of the cross-linking reaction considering the deposited energy distribution along the ion track.
Abstract: Nanowire formation in Si-based polymer thin films using a heavy ion beam is discussed in terms of energy density deposition along ion tracks. Gelation of the polymer along the ion track results in cross-linking to produce nanowires with size and number density controllable by selecting appropriate ion beam characteristics and polymer materials. Ion bombardment of poly(carbosilane) (PCS), PCS−poly(vinylsilane) blend polymer, and poly(methylphenylsilane) produces nanowires with radii of 7−30 nm depending on the type of ion beam. The difference in size is shown to be related to the efficiency of the cross-linking reaction considering the deposited energy distribution along the ion tracks.
53 citations
TL;DR: In this article, a bilevel resist process using P(SiSt90-CMS10) silicon containing resist as a top layer has been developed for Ga+ focused ion beam (FIB) lithography.
Abstract: A bilevel resist process using P(SiSt90–CMS10) silicon containing resist as a top layer has been developed for Ga+ focused ion beam (FIB) lithography. A 100 nm linewidth pattern with 750 nm thickness has been demonstrated. Lithographic characteristics for 100 kV Ga+ FIB have been studied for PMMA positive resist and P(SiSt90–CMS10) negative resist. The results indicate that backscattering and proximity effects are negligible and that 100 kV Ga+ FIB resist sensitivity is about 100 times larger than that for 20 kV electron beam. Moreover, it has been observed that discontinuous lines, which may be caused by shot noise or by an oscillation at the end of the Taylor cone of Ga ion source, are produced at low dose for both PMMA and P(SiSt90–CMS10) resists.
52 citations
TL;DR: A large cavity coupling energy of up to (2π) 1 MHz/nm for metallic beam resonators at tens of megahertz is shown, and it is found that the dissipation is linearly proportional to the temperature.
Abstract: The detection of mechanical vibrations near the quantum limit is a formidable challenge since the displacement becomes vanishingly small when the number of phonon quanta tends toward zero. An interesting setup for on-chip nanomechanical resonators is that of coupling them to electrical microwave cavities for detection and manipulation. Here we show how to achieve a large cavity coupling energy of up to (2π) 1 MHz/nm for metallic beam resonators at tens of megahertz. We used focused ion beam (FIB) cutting to produce uniform slits down to 10 nm, separating patterned resonators from their gate electrodes, in suspended aluminum films. We measured the thermomechanical vibrations down to a temperature of 25 mK, and we obtained a low number of about 20 phonons at the equilibrium bath temperature. The mechanical properties of Al were excellent after FIB cutting, and we recorded a quality factor of Q ∼ 3 × 10(5) for a 67 MHz resonator at a temperature of 25 mK. Between 0.2 and 2 K we find that the dissipation is linearly proportional to the temperature.
52 citations