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Focused ion beam

About: Focused ion beam is a research topic. Over the lifetime, 12154 publications have been published within this topic receiving 179523 citations. The topic is also known as: FIB.


Papers
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Journal ArticleDOI
TL;DR: The structural and chemical composition of two unique microstructures formed on nickel, with nanoscale features, produced using femtosecond laser surface processing (FLSP) techniques is reported in this paper.
Abstract: The structural and chemical composition of two unique microstructures formed on nickel, with nanoscale features, produced using femtosecond laser surface processing (FLSP) techniques is reported in this paper. These two surface morphologies, termed mounds and nanoparticle-covered pyramids, are part of a larger class of self-organized micro/nanostructured surfaces formed using FLSP. Cross-sections of the structures produced using focused ion beam milling techniques were analyzed with a transmission electron microscope. Both morphologies have a solid core with a layer of nanoparticles on the surface. Energy dispersive X-ray spectroscopy by scanning transmission electron microscopy studies reveal that the nanoparticles are a nickel oxide, while the core material is pure nickel.

48 citations

Journal ArticleDOI
TL;DR: In this article, the characteristics of generated defects in ion-implanted submicron Si areas are described, particularly emphasizing changes in the spatial distribution of damage with a reduction in pattern sizes into which implantations are carried out.

48 citations

Journal ArticleDOI
TL;DR: In this paper, a focused high-energy ion beam is used to create high-resolution patterns of implantation doping, damage in crystal structures, or other chemical change such as molecular bond breaking.
Abstract: Microfabrication techniques are being investigated in which a focused high‐energy ion beam bombards a surface to create high‐resolution patterns of implantation doping, damage in crystal structures, or other chemical change such as molecular bond breaking. The objective is to demonstrate unique microfabrication techniques such as maskless implantation doping and the formation of self‐aligned structures. Preliminary results are presented of doped regions written in silicon by a focused boron beam. Electrical measurements on heavily doped contact regions and on a lightly doped resistive region are in good agreement with what would be expected from conventional ion implantation employing masks. The exposure of electron beam resist by a focused beam of 60‐keV helium ions is also reported. The resist sensitivity is ∼100 times greater for these ions than for electrons. The focused ion beam used in these studies was generated in a focusing arm which includes apertures, deflection plates, and an einzel lens that ...

48 citations

Patent
04 Dec 1998
TL;DR: In this article, an apparatus for surface modification of a polymer, metal and ceramic material using an ion beam (IB) is described. But the work in this paper is limited to the case of polymers.
Abstract: An apparatus for surface modification of a polymer, metal and ceramic material using an ion beam (IB) is disclosed, which is capable of supplying and controlling a voltage (220) applied to a material to be surface-modified so that an ion beam (IB) energy irradiated to the material is controlled, differentiating the degree of the vacuum of a reaction gas in a portion of a vacuum chamber in which the ion beam is irradiated from that in a portion in which the ion beam is generated, and also being applicable for both-side irradiating processing and continuous processing.

48 citations

Patent
05 Jan 1999
TL;DR: A focused ion beam (FIB) system as discussed by the authors produces a final beam spot size down to 0.1 μm or less and an ion beam output current on the order of microamps.
Abstract: A focused ion beam (FIB) system produces a final beam spot size down to 0.1 μm or less and an ion beam output current on the order of microamps. The FIB system increases ion source brightness by properly configuring the first (plasma) and second (extraction) electrodes. The first electrode is configured to have a high aperture diameter to electrode thickness aspect ratio. Additional accelerator and focusing electrodes are used to produce the final beam. As few as five electrodes can be used, providing a very compact FIB system with a length down to only 20 mm. Multibeamlet arrangements with a single ion source can be produced to increase throughput. The FIB system can be used for nanolithography and doping applications for fabrication of semiconductor devices with minimum feature sizes of 0.1 μm or less.

48 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202394
2022278
2021251
2020329
2019351
2018347