Focused ion beam

About: Focused ion beam is a research topic. Over the lifetime, 12154 publications have been published within this topic receiving 179523 citations. The topic is also known as: FIB.

Electrically induced conducting nanochannels in an amorphous resistive switching niobium oxide film

Abstract: Metallic nanostructures that act as electrical switches between bistable resistance states are created electrically in an insulating amorphous niobium oxide thin film. The physical formation of the metallic nanostructures are probed using in situ focused ion beam scanning electron microscopy equipped with a current-voltage measurement system. While the electroforming process changes the film, dramatically inducing metallic nanochannels across it, significant changes in the film do not occur during repeated resistance switching afterward. A qualitative resistive switching model is proposed taking into account the gradual forming process.

Electron Beam Testing

Abstract: Publisher Summary The term “Electron Beam Testing” means the testing of electrical properties of a circuit or an electron device by using the electron beam The commercial electron beam tester uses the probing action of an electron beam, and it can resolve 01 μ m spatially and subnanosecond in time Its voltage sensitivity reaches 10 mV It, however, needs: (i) high initial cost and (ii) high skill in testing This chapter discusses how the electron beam is used and the information that can be derived from it The main topic is the scan-display methods where the electron beam is used as a probe Furthermore, the contactless current feedings are discussed followed by the voltage contrast that is the key technology in the electron beam testing The electron beam testing is not completely nondestructive; the irradiation effects are also reviewed The chapter also discusses the phenomena that the electron optical column differs in some respects from a usual scanning electron microscope

Room temperature operational single electron transistor fabricated by focused ion beam deposition

Abstract: We present the fabrication and room temperature operation of single electron transistors using 8nm tungsten islands deposited by focused ion beam deposition technique. The tunnel junctions are fabricated using oxidation of tungsten in peracetic acid. Clear Coulomb oscillations, showing charging and discharging of the nanoislands, are seen at room temperature. The device consists of an array of tunnel junctions; the tunnel resistance of individual tunnel junction of the device is calculated to be as high as 25.13GΩ. The effective capacitance of the array of tunnel junctions was found to be 0.499aF, giving a charging energy of 160.6meV.

Oxidation of simple and Pt-modified aluminide diffusion coatings on Ni-base superalloys. I: Oxide scale microstructure

Abstract: The isothermal oxidation at 1050°C of one simple (PWA73) and three Pt-modified (RT22, SS82A and MDC150L) aluminide diffusion coatings, deposited on the same single crystalline Ni-base superalloy, CMSX-4, was investigated. The oxidation was studied by gravimetry, scanning-electron microscopy (SEM), transmission electron microscopy (TEM), energy-dispersive X-ray spectrometry (EDS) and grazing angle X-ray diffraction (XRD). TEM samples were prepared by focused ion beam (FIB) milling. It was found that the oxide on the simple-aluminide coating grew much faster and started to spall much earlier than those on the Pt-modified coatings. This was related to the higher amount of other phases than α-Al2O3 in the oxide scale on the simple-aluminide coating. It was shown that the presence of Pt in the coating suppressed the formation of deleterious phases such as spinels in the oxide scale, but also that the surface morphology of the coating prior to oxidation plays an important role.