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Focused ion beam

About: Focused ion beam is a research topic. Over the lifetime, 12154 publications have been published within this topic receiving 179523 citations. The topic is also known as: FIB.


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Journal ArticleDOI
TL;DR: In this paper, the authors outline some of the possible applications of nanotechnology to modern molecular biology and discuss several technologies that can be used to make nanoscale confining environments (channels or post arrays) for long polymers such as DNA.
Abstract: We outline some of the possible applications of nanotechnology to modern molecular biology and discuss several technologies that can be used to make nanoscale confining environments (channels or post arrays) for long polymers such as DNA. A particular emphasis is placed on making large arrays using non-electron beam lithography methods. We then discuss how focused ion beam (FIB) milling can be used to construct nearfield slits for examining molecules.

45 citations

Journal ArticleDOI
TL;DR: In this paper, a multicusp plasma ion source has been used to measure focused beam spot size versus current relationships for several inert gas ion species and the axial brightness of the ion source was ascertained.
Abstract: The multicusp plasma ion source has found many uses such as in ion implanters, ion projection lithography, and injectors for particle accelerators. This source is favorable for such applications because of its low ion temperature, small energy spread, and good stability. These properties also offer the tantalizing possibility of utilizing such a source to create a noncontaminating focused ion beam (FIB) system for semiconductor fabrication line use and advanced photomask repair applications. We have made measurements of the brightness of this ion source and have done some preliminary applications work with a Kr+-enabled FIB system for mask repair and ion milling. A specially designed multicusp plasma ion source has been used to measure focused beam spot size versus current relationships for several inert gas ion species. From these data the axial brightness of the ion source was ascertained. For the extraction of Kr+ from the source we find an angular intensity of 12 μA/sr and a virtual source size of 16....

45 citations

Journal ArticleDOI
TL;DR: In this article, the electrical properties of Bi2S3 nanowire bundles were investigated using a solventless reaction involving a single-source bismuth thiolate precursor and stabilizing organic ligands.
Abstract: The electrical properties of Bi2S3 nanowire bundles were investigated. The nanowires were synthesized using a solventless reaction involving a single-source bismuth thiolate precursor and stabilizing organic ligands. For electrical testing, nanowires were dispersed in solution and drop cast onto a substrate with gold contact pads patterned by electron beam lithography techniques (EBL). Electrical connections were made by depositing platinum interconnect lines between the nanowires and the gold pads by focused ion beam (FIB) chemical vapour deposition. Current–voltage (I–V) curves were measured under nitrogen as a function of temperature. The data revealed activated transport that followed a Meyer–Neldel relationship. Annealing under vacuum decreased the nanowire resistance by nearly four orders of magnitude. The annealed nanowires followed an inverse Meyer–Neldel relationship. Illumination with UV light increased the current, and air exposure decreased the current under constant applied bias.

45 citations

Journal ArticleDOI
TL;DR: In this paper, a scanning-electron-beam zapping system for the annealing of ion-implanted semiconductors is described, and experiments have been conducted on silicon implanted with various doses of arsenic and boron.
Abstract: A scanning-electron-beam zapping system for the annealing of ion-implanted semiconductors is described. Experiments have been conducted on silicon implanted with various doses of arsenic and boron. Results show that for a given beam power full annealing is achieved above a threshold exposure.

45 citations

Journal ArticleDOI
TL;DR: In this article, the role of droplet-related defects on the initiation and propagation of cavitation erosion damage of TiN coatings produced by Cathodic Arc Physical Vapor Deposition (CA-PVD) was investigated.
Abstract: In this study, the role of droplet-related defects on the initiation and propagation of cavitation erosion damage of TiN coatings produced by Cathodic Arc Physical Vapor Deposition (CA-PVD) was investigated. Ultrasonic-aided cavitation erosion tests were conducted in distilled water, using a specially designed specimen holder. By using this holder, following of the defect-related damages on the same region of the sample became possible by scanning electron microscopy (SEM) during a total test duration of 12 h. Focused ion beam (FIB) investigations were also carried out on cross-sections of some selected defects to understand the damage mechanisms. Results of the study revealed the important role of droplet-related defects on the cavitation erosion damage. Deep cavities formed by detaching of conical droplets were determined as the most detrimental type of defects. At these sites, large impact craters were formed with sizes extending to 100 μm with a substrate-reached area at their center after 3.5 h of cavitation erosion test. However, the damage created by buried droplets was very limited when compared to the cavities. Their role on the initiation and propagation of the cavitation damage depends on their shape and position in the coating. Conical droplets embedded in the coating resulted in the capping of a coating layer above them. These damages were not deepened or extended during the test duration. On the other hand, wide droplets with a flat top that sat on the substrate did not result in the formation of neither capping of the coating nor impact craters after 12 h of testing.

45 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202394
2022278
2021251
2020329
2019351
2018347