Topic
Focused ion beam
About: Focused ion beam is a research topic. Over the lifetime, 12154 publications have been published within this topic receiving 179523 citations. The topic is also known as: FIB.
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TL;DR: In this article, the surface changes induced by repeated brake applications and how such material modifications might affect friction and wear properties of automotive disc brakes were investigated by using a focused ion beam instrument (FIB).
111 citations
TL;DR: In this paper, a broad beam ion source using a microwave electron cyclotron resonance (ECR) discharge has been developed, giving high reliability in operation, and an ion current density of 1 mA/cm2 is obtained at an ion extraction voltage of 1000 V.
Abstract: A broad beam ion source using a microwave electron cyclotron resonance (ECR) discharge has been newly developed, giving high reliability in operation. The ion source operates at gas pressures higher than about 3×10-5 Torr, and an ion current density of 1 mA/cm2 is obtained at an ion extraction voltage of 1000 V. By introducing C4F8 and SiCl4 into the ion source, SiO2 and Al are etched at rates greater than 1000 A/min, with high selectivities and high-accuracy pattern transfer.
110 citations
TL;DR: The generation of high-current pulsed ion beams with ion energy in the range 0.5-10 MeV appears to be possible by modifications of present electron-beam technology as mentioned in this paper.
Abstract: The generation of high-current (\ensuremath{\sim}${10}^{5}$ A) pulsed ion beams with ion energy in the range 0.5-10 MeV appears to be possible by modifications of present electron-beam technology.
110 citations
TL;DR: In this article, a combined model involving thermionic emission and tunneling through interface states is proposed to describe the electrical conduction through the platinum-nanowire contacts, fabricated by focused ion beam techniques.
Abstract: A simple and useful experimental alternative to field-effect transistors for measuring electrical properties free electron concentration nd, electrical mobility , and conductivity in individual nanowires has been developed. A combined model involving thermionic emission and tunneling through interface states is proposed to describe the electrical conduction through the platinum-nanowire contacts, fabricated by focused ion beam techniques. Current-voltage I-V plots of single nanowires measured in both two- and four-probe configurations revealed high contact resistances and rectifying characteristics. The observed electrical behavior was modeled using an equivalent circuit constituted by a resistance placed between two back-to-back Schottky barriers, arising from the metal-semiconductor-metal M-S-M junctions. Temperature-dependent I-V measurements revealed effective Schottky barrier heights up to BE=0.4 eV.
110 citations
TL;DR: In this article, the transport characteristics of 70nm-diameter platinum nanowires (NWs), fabricated using a pore-templated electrodeposition process and individually contacted using a focused ion beam (FIB) method, are reported.
Abstract: The transport characteristics of 70-nm-diameter platinum nanowires (NWs), fabricated using a pore-templated electrodeposition process and individually contacted using a focused ion beam (FIB) method, are reported. This approach yields nanowire devices with low contact resistances (∼400Ω) and linear current–voltage characteristics for current densities up to 65kA∕cm2. The intrinsic nanowire resistivity (33±5μΩcm) indicates significant contributions from surface- and grain-boundary scattering mechanisms. Fits to the temperature dependence of the intrinsic NW resistance confirm that grain-boundary scattering dominates surface scattering (by more than a factor of 2) at all temperatures. Our results demonstrate that FIB presents a rapid and flexible method for the formation of low-resistance ohmic contacts to individual metal nanowires, allowing intrinsic nanowire transport properties to be probed.
109 citations