Focused ion beam

About: Focused ion beam is a research topic. Over the lifetime, 12154 publications have been published within this topic receiving 179523 citations. The topic is also known as: FIB.

Scaling of ferroelectric and piezoelectric properties in Pt/SrBi2Ta2O9/Pt thin films

Abstract: Scaling of the ferroelectric and piezoelectric properties in Pt/SrBi2Ta2O9/Pt thin films was studied. Focused ion beam milling was used to fabricate submicron devices (1×1, 0.5×0.5, 0.25×0.25, 0.09×0.09, and 0.07×0.07 μm2) and scanning force microscopy was used to examine their piezoelectric response. It was found that capacitors as small as 0.09×0.09 μm2 exhibit good piezoelectric/ferroelectric properties and that submicron (0.25×0.25 μm2) capacitors show resistance to bipolar fatigue with up to at least 109 cycles. The results were compared with similar capacitor structures milled in the Pb1.0(Nb0.04Zr0.28Ti0.68)O3 system where structures as small as 0.07×0.07 μm2 were analyzed.

Focused-ion-beam fabrication of ZnO nanorod-based UV photodetector using the in-situ lift-out technique

Abstract: ZnO nanorods and nanowires are promising candidates as new types of high-sensitivity ultraviolet (UV) photodetectors due to their wide bandgap and large aspect ratio. In this study, single-crystalline ZnO nanorods were grown on glass substrates by a hydrothermal method. Specific structural, morphological, electrical, and optical measurements were carried out. A single ZnO nanorod-based photodetector was fabricated using the in-situ lift-out technique in a focused ion beam (FIB/SEM) instrument and characterized. With a source wavelength of 370 nm and an applied bias of 1 V, the responsivity of the ZnO nanorod is 30 mA/W. The single ZnO nanorod photodetector exhibits an ultraviolet (UV) photoresponse promising for potential applications as cost-effective UV detectors. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Semiconductor integrated circuit device and process for producing the same

Abstract: The present invention relates to a semiconductor integrated circuit device and a process for producing the same. A hole is bored in an insulating film above a portion of a wiring which is to be connected to another wiring by means of a focused ion beam. The inside of the hole and a predetermined region on the insulating film are irradiated with either a laser beam or an ion beam in a metal compound gas to deposit metal in the hole and on said region and a connecting wiring is formed by means of optically pumped CVD. To electrically connect upper- and lower-level wirings in a multilayer wiring structure by a connecting wiring, the connecting wiring is electrically isolated from an intermediate-level wiring through which it extends. The above-described arrangement enables provision of a hole with a focused ion beam and formation of a metal wiring on a selective region by means, for example, optically pumped CVD. Accordingly, it is possible to effect fine machining and electrically connect together wirings inside an LSI after the completion thereof. It is therefore possible to carry out debugging, repair and a defect analysis of the LSI.

Focused ion beam scan routine, dwell time and dose optimization for submicrometre period planar photonic crystal components and stamps in silicon

Abstract: Focused ion beam (FIB) milling is receiving increasing attention for nanostructuring in silicon (Si). These structures can for example be used for photonic crystal structures in a silicon-on-insulator (SOI) configuration or for moulds which can have various applications in combination with imprint technologies. However, FIB fabrication of submicrometre holes having perfectly vertical sidewalls is still challenging due to the redeposition effect in Si. In this study we show how the scan routine of the ion beam can be used as a sidewall optimization parameter. The experiments have been performed in Si and SOI. Furthermore, we show that sidewall angles as small as 1.5◦ are possible in Si membranes using a spiral scan method. We investigate the effect of the dose, loop number and dwell time on the sidewall angle,interhole milling and total milling depth by studying the milling of single and multiple holes into a crystal. We show that the sidewall angles can be as small as 5◦ in (bulk) Si and SOI when applying a larger dose. Finally, we found that a relatively large dwell time of 1 ms and a small loop number is favourable for obtaining vertical sidewalls. By comparing the results with those obtained by others, we conclude that the number of loops at a fixed dose per hole is the parameter that determines the sidewall angle and not the dwell time by itself.