Focused ion beam

About: Focused ion beam is a research topic. Over the lifetime, 12154 publications have been published within this topic receiving 179523 citations. The topic is also known as: FIB.

Nanoirnprint of glass materials with glassy carbon mold fabricated by focused-lon-beam etching

Abstract: Micro/nano-imprinting or hot embossing is a target of interest for the industrial production of microdevices. In fluidic micro electromechanical systems (MEMS) applications, polymer materials have been employed for their low cost in the fabrication of economical products. However, glasses are much more suitable for higher-temperature applications or use in reactive chemical environments. In optical MEMS as well, glasses are good candidate materials for enhanced optical properties. In this study, micro/nano-imprinting was employed for Pyrex glass and quartz glass molding, and test structures were successfully fabricated with good fidelity for a 10×10×7 µm microstructure and a 0.3 µm line-and-space pattern with a depth of 0.4 µm.

Intense ion beams

Abstract: In recent years the requirements for higher current ion beams have increased notably in a wide area of applications. To meet these requirements it has been necessary to develop better understanding of the three main components of ion beam systems, namely the plasma source in which ions of the species needed can be produced at controlled rates with spatial and temporal uniformity, the extraction electrode systems for formation of low divergence and low emittance ion beams, and the transport of the ion beams in the presence of possible high space charge forces. In this review developments in these areas are discussed with the objective of indicating the advances in understanding the basic processes which are important.

Fabrication of GaN-based nanoscale device structures utilizing focused ion beam induced Pt deposition

Abstract: In this work we have demonstrated nanoscale GaN device structures made from individual GaN nanowires and electrical contacts utilizing focused ion beam (FIB) induced Pt deposition. These GaN nanowires were grown by direct reaction of Ga vapor with NH3 and had diameters ranging from 100nmto250nm and lengths up to 200μm. As-grown nanowires were dispersed on SiO2 coated p++ Si substrate. A 30keV Ga+ ion beam was used to dissociate (trimethyl)methylcyclopentadienyl-platinum precursor for depositing Pt contacts to GaN nanowires. FIB-deposited Pt contacts to GaN nanowires showed nonlinear I-V characteristics, which turned linear after annealing at 500°C for 30s in argon. Resistivity of a GaN nanowire measured using a four terminal contact geometry fabricated by depositing Pt with a FIB was in the range of 5×10−3Ωcm. Temperature dependent resistivity measurement of the GaN nanowire revealed semiconducting behavior with a weak temperature dependence of the resistivity. In this study both Ohmic and Schottky contac...

Quantitative nanotribology by AFM: a novel universal calibration platform.

Abstract: The quantitative determination of friction forces by atomic force microscopy (AFM) in nanotribology requires the conversion of the output voltage signal of the sector area-sensitive photodiode to force using (a) the torsional spring constant of the cantilever and (b) the lateral sensitivity of the photodiode. Many existing methods provide calibration factors with large errors and suffer from poor reproducibility. We report on the fabrication, validation, and application of a new, universally applicable standard specimen that enables one to accurately calibrate all types of AFM cantilevers and tips for quantitative friction force measurements. The Si(100) calibration standard, which exhibits 30 and 50 m wide notches with tilt angles 8 between 20 and 35 degree with respect to the wafer surface, was fabricated by focused ion beam (FIB) milling. The quantification of friction forces obtained on this universal standard specimen using a direct method (the improved wedge calibration method, as introduced by Ogletree, Carpick, and Salmeron Rev. Sci. Instrum. 1996, 67, 3298-3306), which yields (a) and (b) simultaneously, was critically tested for various types of Si3N4 integrated cantilever-tip assemblies. The error in the calibration factors obtained was found to be ca. 5%, which is a significant improvement compared to errors of 30-50% observed for the often applied two-step calibration procedures of cantilever lateral force constant and photodiode sensitivity. As demonstrated for oxidized Si(100), thin films of poly(methyl methacrylate) (PMMA), and micropatterned self-assembled monolayers (SAMs) on gold, the calibration of various V-shaped and single beam cantilevers based on the application of the new universal standard in conjunction with the direct wedge method proposed allows one to conveniently perform quantitative nanotribological measurements for a wide range of materials and applications.