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Focused ion beam

About: Focused ion beam is a research topic. Over the lifetime, 12154 publications have been published within this topic receiving 179523 citations. The topic is also known as: FIB.


Papers
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Journal ArticleDOI
01 Mar 2012-Scanning
TL;DR: Helium ion milling of suspended silicon nitride thin films is explored and it is found that direct-milling depth varies linearly with beam dose while transmission-mills depth varies with the square of the beam dose, resulting in a straightforward method of controlling local film thickness.
Abstract: Summary: Helium ion milling of suspended siliconnitride thin films is explored. Milled squares pat-terned by scanning helium ion microscope are sub-sequently investigated by atomic force microscopyand the relation between ion dose and milling depthis measured for both the direct (side of ion inci-dence) and transmission (side opposite to ion in-cidence) regimes. We find that direct-milling depthvaries linearly with beam dose while transmission-milling depth varies with the square of the beamdose, resulting in a straightforward method of con-trolling local film thickness. SCANNING 00: 1–6,2012. C 2012 Wiley Periodicals, Inc. Key words: helium ion microscope (HIM), atomicforce microscope (AFM), ion milling, membrane,thinning Introduction The helium ion microscope (HIM) is a promisingyoung technology for high-resolution imaging (Mor-gan etal. ,2006;Scipioni etal. ,2008;Ramachandra etal. ,2009).Thisinstrumentusesanatomicallydefinedmetalsourcetoproduceacoherenthelium(He)beamwith high brightness and small probe size. Through

77 citations

Journal ArticleDOI
TL;DR: A reliable fabrication method is demonstrated to produce plasmonic dipole nanoantennas with gap values in the range of 3.5-20 nm and a reproducibility within 1 nm, in agreement with finite element simulations.
Abstract: We demonstrate a reliable fabrication method to produce plasmonic dipole nanoantennas with gap values in the range of 3.5–20 nm. The method combines electron beam lithography to create gold nanorods and helium focused ion beam milling to cut the gaps. Results show a reproducibility within 1 nm. Scattering spectra of antennas show a red shift of resonance wavelengths and an increase of the intensity of resonance peaks with a decrease of the gap size, which is in agreement with finite element simulations. The measured refractive index sensitivity was about 250 nm per refractive index unit for antennas with gap values below 5 nm.

77 citations

Journal ArticleDOI
25 Aug 2008-Wear
TL;DR: In this article, the tribological properties of a nano-patterned Si surface have been investigated in ambient condition by atomic force microscopy (AFM), where the pattern, consisting of parallel grooves, was realized on a Si(0,0,1) single crystal via focused ion beam (FIB) milling.

77 citations

Journal ArticleDOI
TL;DR: In this article, a Co-20 at.% Ni polycrystal produced by electrodeposition has been investigated in planar and cross sections using orientation microscopy in conjunction with high-resolution scanning electron and focused ion beam microscopy.

77 citations

Journal ArticleDOI
TL;DR: In this article, a Ga ion is implanted into a GaAs-AlxGa1-xAs superlattice epitaxial wafer and a line-and-space scan of the Ga ion beam is performed.
Abstract: Using a focused ion beam technology, Ga ion is implanted into a GaAs-AlxGa1-xAs superlattice epitaxial wafer. The compositional disordering of the superlattice occurs during an annealing after ion-implantation. Interdiffusion coefficient of Ga and Al is measured from the photoluminescence peak energy shift as a function of annealing time and the result shows that it is as large as that for Si ion implanted superlattice. By line-and-space scan of the Ga ion beam, a submicron periodic structure of the superlattice and the mixed crystal is fabricated over the epi-wafer and examined by low temperature cathodo-luminescence topography.

77 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202394
2022278
2021251
2020329
2019351
2018347