Topic
Focused ion beam
About: Focused ion beam is a research topic. Over the lifetime, 12154 publications have been published within this topic receiving 179523 citations. The topic is also known as: FIB.
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TL;DR: In this paper, a focused ion beam (FIB) was used to mill an array of patterned holes into 2D hexagonal boron nitride (hBN) to find arrays of bright, localized photoluminescence.
Abstract: Quantum emitters (QEs) in 2D hexagonal boron nitride (hBN) are extremely bright and are stable at high temperature and under harsh chemical conditions. Because they reside within an atomically thin 2D material, these QEs have a unique potential to couple strongly to hybrid optoelectromechanical and quantum devices. However, this potential for coupling has been underexplored because of challenges in nanofabrication and patterning of hBN QEs. Motivated by recent studies showing that QEs in hBN tend to form at edges, we use a focused ion beam (FIB) to mill an array of patterned holes into hBN. Using optical confocal microscopy, we find arrays of bright, localized photoluminescence that match the geometry of the patterned holes. Furthermore, second-order photon correlation measurements on these bright spots reveal that they contain single and multiple QEs. By optimizing the FIB parameters, we create patterned single QEs with a yield of 31%, a value close to Poissonian limit. Using atomic force microscopy to s...
76 citations
TL;DR: In this article, the authors explored the capability of focused ion beam systems as a tool for integrated circuit restructuring and demonstrated two methods for joining conductors, which can work at dimensions a factor of 10 smaller than laser zapping and requires no special sites to be fabricated.
Abstract: One of the capabilities of focused ion beam systems is ion milling. The purpose of this work is to explore this capability as a tool for integrated circuit restructuring. Methods for cutting and joining conductors are needed. Two methods for joining conductors are demonstrated. The first consists of spinning nitrocellulose (a self‐developing resist) on the circuit, ion exposing an area, say, 7×7 μm, then milling a smaller via with sloping sidewalls through the first metal layer down to the second, e‐beam evaporating metal, and then dissolving the nitrocellulose to achieve liftoff. The resistance of these links between two metal levels varied from 1 to 7 Ω. The second, simpler method consists of milling a via with vertical sidewalls down to the lower metal layer, then reducing the milling scan to a smaller area in the center of this via, thereby redepositing the metal from the lower layer on the vertical sidewall. The short circuit thus achieved varied from 0.4 to 1.5 Ω for vias of dimensions 3×3 μm to 1×1 μm, respectively. The time to mill a 1×1 μm via with a 68 keV Ga+ beam, of 220 Pa current is 60 s. In a system optimized for this application, this milling time is expected to be reduced by a factor of at least 100. In addition, cuts have been made in 1‐μm‐thick Al films covered by 0.65 μm of SiO2. These cuts have resistances in excess of 20 MΩ. This method of circuit restructuring can work at dimensions a factor of 10 smaller than laser zapping and requires no special sites to be fabricated.
76 citations
TL;DR: The focused ion beam (FIB) has become an important tool in materials science for studying and modifying materials systems at the micro and nanometer levels as discussed by the authors, due to its ability to perform precision in-situ milling, has been extended to studying three-dimensional structural and chemical relationships.
Abstract: The focused ion beam (FIB) has become an important tool in materials science for studying and modifying materials systems at the micro and nanometer levels. The technique, due to its ability to perform precision in-situ milling, has been extended to studying three-dimensional structural and chemical relationships. With the help of computer algorithms for processing data and graphics packages for display, three-dimensional systems can easily be reconstructed and the structure interrogated to obtain both qualitative and quantitative information. It is possible to study features at spatial resolutions at the tens-of-nanometers level and volumes with dimensions of up to tens of microns. This allows the reconstruction of many systems in the size range important to nanotechnology. Practical aspects of FIB tomography will be presented, emphasizing data collection, image processing, creating three-dimensional volumes, and extracting quantitative information.
76 citations
TL;DR: In this paper, the effect of wire wear on the surface morphology, roughness, and subsurface damage of single crystal silicon wafers was analyzed using scanning electron microscopy, Raman spectroscopy, confocal microscopy and focused ion beam machining (FIB).
76 citations
TL;DR: In this article, the authors used focused 30-keV Ga+ ions to define small arrays of wires, circles, and elongated hexagons in the size range 100-500 nm.
Abstract: Focused-ion-beam (FIB) milling has been used to structure magnetic nanoelements from 5 nm thick films of permalloy. We have used focused 30-keV Ga+ ions to define small arrays (6 μm×6 μm) of wires, circles, and elongated hexagons in the size range 100–500 nm. High-sensitivity magneto-optical measurements combined with atomic force microscopy show that very high quality magnetic nanostructures can be fabricated by FIB milling even in thin films of soft magnetic materials. This finding could be significant for the future commercialization of certain aspects of magnetic nanotechnology and magnetoelectronics.
76 citations