Topic
Focused ion beam
About: Focused ion beam is a research topic. Over the lifetime, 12154 publications have been published within this topic receiving 179523 citations. The topic is also known as: FIB.
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TL;DR: In this article, the interaction between a fatigue microcrack with a grain boundary decorated by carbide precipitates in a directionally solidified Ni base alloy is investigated, and it is shown that carbides precipitates strongly influence crack growth by initiating geometrically necessary steps.
74 citations
TL;DR: In this article, the application of focused ion beam techniques to prepare cross-sections of wear tracks is presented, which reveals the formation of two subsurface zones, each with its own characteristic features.
74 citations
TL;DR: The morphology and structure of the weld interface in magnetic pulse welding of similar and dissimilar metals were investigated in this paper, where extensive characterisation techniques were used, including the focused ion beam (FIB) method, to prepare a cross-section of the Al-Mg interface for TEM characterisation.
Abstract: The morphology and structure of the weld interface in magnetic pulse welding of similar and dissimilar metals were investigated. The interface zone of dissimilar metal couples such as Al–Mg, was studied in comparison to Al–Al welds. It was found that intermetallic phases (IMP) of different compositions are created during welding of the Al–Mg couple by rapid solidification of a thin melted layer at the interface. According to the calculated energy balance of magnetic pulse welding (MPW), there is enough energy to melt a thin interfacial layer and create IMP. Intensive characterisation techniques were used, including the focused ion beam (FIB) method that was used to prepare a cross-section of the Al–Mg interface for TEM characterisation. It was established that the jet action plays an important role in the melting process at the bonding zone.
74 citations
TL;DR: In this paper, the role of dynamic annealing (defect-annihilation) is discussed with an emphasis on the fluence-dependent defect structure and point-defect clusters are identified as major component in irradiated chemical-vapor-deposited GaN nanowires.
Abstract: Ga+ ion implantation of chemical-vapor-deposited GaN nanowires (NWs) is studied using a 50-keV Ga+ focused ion beam The role of dynamic annealing (defect-annihilation) is discussed with an emphasis on the fluence-dependent defect structure Unlike heavy-ion-irradiated epitaxial GaN film, large-scale amorphization is suppressed until a very high fluence of 2×1016 ions cm−2 In contrast to extended-defects as reported for heavy-ion-irradiated epitaxial GaN film, point-defect clusters are identified as major component in irradiated NWs Enhanced dynamic annealing induced by high diffusivity of mobile point-defects in the confined geometry of NWs is identified as the probable reason for observed differences
73 citations
TL;DR: In this paper, a three-dimensional reconstruction of a mixed-conducting La 0.58 Sr 0.4 Co 0.2 Fe 0.8 O 3− δ (LSCF)-cathode is introduced, which gives a detailed description thereof.
73 citations