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Free electron model

About: Free electron model is a research topic. Over the lifetime, 4678 publications have been published within this topic receiving 103535 citations.


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TL;DR: In this article, the authors used an rf magnetron reactive sputtering method to prepare SrMoO3 thin film on a silica glass substrate and evaluated its optical properties The reflectivity of the blue-colored film showed a cutoff due to plasmon at ∼17
Abstract: We used an rf magnetron reactive sputtering method to prepare SrMoO3 thin film on a silica glass substrate and evaluated its optical properties The reflectivity of the blue-colored film showed a cutoff due to plasmon at ∼17 eV From a Kramers–Kronig analysis of the reflectivity, the spectral dependence of dielectric constants and optical constants were obtained They agreed in tendency with the constants determined by spectroscopic ellipsometry The plasma frequency due to free carriers (45 eV) was obtained by application of a Drude model to reflectivity values, which showed that the effective mass of the conduction carrier was m*=21m0, where m0 is the free electron mass

38 citations

Journal ArticleDOI
TL;DR: In this paper, a terahertz (THz) frequency-domain spectroscopic ellipsometer design that suppresses formation of standing waves by use of stealth technology approaches is presented.
Abstract: We present a terahertz (THz) frequency-domain spectroscopic ellipsometer design that suppresses formation of standing waves by use of stealth technology approaches. The strategy to suppress standing waves consists of three elements geometry , coating , and modulation . The instrument is based on the rotating analyzer ellipsometer principle and can incorporate various sample compartments, such as a superconducting magnet, in situ gas cells, or resonant sample cavities, for example. A backward wave oscillator and three detectors are employed, which permit operation in the spectral range of 0.1–1 THz (3.3–33 cm $^{-1}$ or 0.4–4 meV). The THz frequency-domain ellipsometer allows for standard and generalized ellipsometry at variable angles of incidence in both reflection and transmission configurations. The methods used to suppress standing waves and strategies for an accurate frequency calibration are presented. Experimental results from dielectric constant determination in anisotropic materials, and free charge carrier determination in optical Hall effect (OHE), resonant-cavity enhanced OHE, and in situ OHE experiments are discussed. Examples include silicon and sapphire optical constants, free charge carrier properties of two-dimensional electron gas in a group III nitride high electron mobility transistor structure, and ambient effects on free electron mobility and density in epitaxial graphene.

38 citations

Journal ArticleDOI
X.W. Fan1, J. Woods
TL;DR: In this paper, the electroluminescence emission spectrum of forward-biased MIS diodes prepared on high-purity single-crystal ZnSe has been studied over the temperature range 20-290 K.
Abstract: The electroluminescence emission spectrum of forward-biased MIS diodes prepared on high-purity single-crystal ZnSe has been studied over the temperature range 20-290 K. At room temperature the emission consisted of two intense bands in the blue at 4655 and 4770 A, while at the lowest temperatures much more structure was observed. Thus at 20 K free and bound exciton emission was particularly intense, and the donor-acceptor (DA) pair band emission (the Q series), together with its accompanying free-to-bound series was also prominent. The bound exciton, pair band, and free-to-bound emission were all substantially quenched as the temperature was increased, so that at room temperature the two blue bands were the only remaining components of the luminescence. Evidence is produced to demonstrate that the band at 4655 A is associated with free exciton recombination following scattering from free electrons in the conduction band. The band at 4770 A is attributed to free exciton recombination with the emission of two longitudinal optical (LO) phonons.

38 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202340
202290
2021132
2020122
2019114
2018112