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Free electron model

About: Free electron model is a research topic. Over the lifetime, 4678 publications have been published within this topic receiving 103535 citations.


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Journal ArticleDOI
Raymond Ashoori1, H. L. Stormer1, J. S. Weiner1, Loren Pfeiffer1, K. W. Baldwin1, Ken W. West1 
TL;DR: Using single-electron capacitance spectroscopy, the magnetic field dependence of the ground state energies of a single quantum dot containing from 0 to 50 electrons is mapped.
Abstract: Using single-electron capacitance spectroscopy, we map the magnetic field dependence of the ground state energies of a single quantum dot containing from 0 to 50 electrons. The experimental spectra reproduce many features of a noninteracting electron model with an added fixed charging energy. However, in detailed observations deviations are apparent: Exchange induces a two-electron singlet-triplet transition, self-consistency of the confinement potential causes the dot to assume a quasi-two-dimensional character, and features develop which are suggestive of the fractional quantum Hall effect.

438 citations

Journal ArticleDOI
TL;DR: In this paper, a superposition of the free and trapped electron spectra was obtained by subtracting the electron spectrum from the transient absorption spectrum, and the spectrum of trapped holes was obtained.
Abstract: Reactive species, holes, and electrons in photoexcited nanocrystalline TiO2 films were studied by transient absorption spectroscopy in the wavelength range from 400 to 2500 nm. The electron spectrum was obtained through a hole-scavenging reaction under steady-state light irradiation. The spectrum can be analyzed by a superposition of the free-electron and trapped-electron spectra. By subtracting the electron spectrum from the transient absorption spectrum, the spectrum of trapped holes was obtained. As a result, three reactive speciestrapped holes and free and trapped electronswere identified in the transient absorption spectrum. The reactivity of these species was evaluated through transient absorption spectroscopy in the presence of hole- and electron-scavenger molecules. The spectra indicate that trapped holes and electrons are localized at the surface of the particles and free electrons are distributed in the bulk.

437 citations

Journal ArticleDOI
TL;DR: In this article, the role of ionization processes in defect-free crystal, including in their model two competing processes: strong electric field ionization and electron impact ionization, was investigated.
Abstract: Transparent solids may show strong absorption when irradiated by a high-intensity laser pulse. Such laser induced breakdown is due to the formation of a free-electron gas. We investigate theoretically the role of ionization processes in a defect-free crystal, including in our model two competing processes: strong-electric-field ionization and electron impact ionization. Free-electron heating is described in terms of electron-phonon-photon collisions. Relaxation of the free electron gas occurs through electron-electron collisions and electron-phonon collisions. The latter are also responsible for energy transfer from the free-electron gas to the phonon gas. We solve numerically a system of time dependent Boltzmann equations, where each considered process is included by its corresponding collision integral. Our results show formation, excitation, and relaxation of the electron gas in the conduction band. We find that strong-electric-field ionization is mainly responsible for free-electron generation. No avalanche occurs at femtosecond laser irradiation. The electron density and the internal energies of the subsystems are calculated. Critical fluences obtained using various criteria for damage threshold are in good agreement with recent experiments.

435 citations

Journal ArticleDOI
TL;DR: In this paper, the effects on the volt-current characteristic of a non-parabolic energy momentum relation in the insulator, and a conduction-band-edge effective electron mass in the inner metal layers, have been derived.

433 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202340
202290
2021132
2020122
2019114
2018112