Frequency response

About: Frequency response is a research topic. Over the lifetime, 25705 publications have been published within this topic receiving 332249 citations.

On the frequency limitations of the circuits based on second generation current conveyors

Abstract: An equivalent circuit for the translinear implementation of the second generation current conveyors with positive or negative current transfer is given. This circuit takes into account the various parasitic elements of the conveyor which induce frequency limitations (gain values, poles of the transfers, and parasitic impedances). The methods allowing the determination of the values for these parasitic elements are indicated and discussed. The effect of each element on the frequency responses of the circuits using the conveyors are studied in every detail. The frequency behavior of two circuits are analyzed as examples: a voltage amplifier without feedback and two configurations for a second order biquad filter operating in current-mode. All the theoretical results of the analysis are well confirmed from SPICE simulations.

Traveling-wave polymeric optical intensity modulator with more than 40 GHz of 3-dB electrical bandwidth

Abstract: A traveling‐wave electro‐optic intensity modulator with a 3‐dB electrical bandwidth of more than 40 GHz, negligible phase distortion, low drive voltages, and an extinction ratio of better than 20 dB is reported in nonlinear optical polymers. The velocity matching between the optical and electrical waves is excellent. The frequency response of the optical modulation is in good agreement with theory.

Frequency band-gap measurement of two-dimensional air/silicon phononic crystals using layered slanted finger interdigital transducers

Abstract: In this paper, we investigate the frequency band-gap features of micromachined air/silicon phononic band structures using layered slanted finger interdigital transducers (SFIT). In order to achieve the applications of phononic crystals on the microelectromechanical system related components, the frequency band-gap widths of surface waves are studied both theoretically and experimentally in micrometer scale phononic crystals. For further integration with the complementary metal-oxide semiconductor processing techniques, silicon is chosen as the base material of the two-dimensional phononic crystals in this study. To cover the frequency band-gap width of the phononic crystal, the wideband SFIT- and the SFIT∕ZnO∕Si-layered structures in the measurement are analyzed and discussed. For layered structures, the dispersive relation is calculated by the effective permittivity approach, and the frequency response of the layered SFIT is then simulated by the coupling-of-modes model. The frequency band-gap width and ...

Bandwidth enhancement for transimpedance amplifiers

Abstract: A technique for bandwidth enhancement of a given amplifier is presented. Adding several interstage passive matching networks enables the control of transfer function and frequency response behavior. Parasitic capacitances of cascaded gain stages are isolated from each other and absorbed into passive networks. A simplified design procedure, using well-known low-pass filter component values, is introduced. To demonstrate the feasibility of the method, a CMOS transimpedance amplifier (TIA) is implemented in a 0.18-/spl mu/m BiCMOS technology. It achieves 3 dB bandwidth of 9.2 GHz in the presence of a 0.5-pF photodiode capacitance. This corresponds to a bandwidth enhancement ratio of 2.4 over the amplifier without the additional passive networks. The transresistance gain is 54 dB/spl Omega/, while drawing 55 mA from a 2.5-V supply. The input sensitivity of the TIA is -18 dBm for a bit error rate of 10/sup -12/.

Frequency Response Analysis and Bandwidth Extension of the Doherty Amplifier

Abstract: A complete frequency response analysis of the Doherty amplifier is presented with the conventional output combining network consisting of two quarter-wavelength (λ/4) transmission lines at a center frequency f0 . Expressions for output power and efficiency were derived over the whole dynamic range and at any frequency f. The analysis shows that the amount of efficiency enhancement, as well as the maximum output power, reduce as the deviation from f0 increases. For instance, the derived expressions show that a conventional Doherty amplifier has a drain efficiency of η ≥ 52.7%, which represents at least 13.4% efficiency enhancement over a class B amplifier, and up to 33.3% fractional bandwidth. A modified output combining network, using λ/4 lines with reduced impedance transformation ratio, is also analyzed, which results in a bandwidth extension of the Doherty amplifier when compared to the conventional design. To verify the derived analyses, three unsymmetrical GaN Doherty power amplifiers (DPAs) were designed and characterized; the first DPA was based on the conventional output combining network, while the second DPA was based on the proposed network. Measurements showed that the first DPA had, at 5-6-dB back-off, a drain efficiency of η ≥ 44% and over 28% fractional bandwidth (1.7-2.25 GHz), while the DPA with the proposed output combining network had a better wideband performance than the third reference conventional DPA, with a back-off drain efficiency of η ≥ 41%, and over 42% fractional bandwidth (1.7-2.6 GHz). To the best of authors' knowledge, the designed DPAs have the highest bandwidths reported thus far.