Full width at half maximum

About: Full width at half maximum is a research topic. Over the lifetime, 7130 publications have been published within this topic receiving 123900 citations. The topic is also known as: FWHM.

Plasma assisted molecular beam epitaxy of ZnO on c -plane sapphire: Growth and characterization

Abstract: ZnO single crystal thin films were grown on c-plane sapphire using oxygen microwave plasma assisted molecular beam epitaxy. Atomically flat oxygen-terminated substrate surfaces were obtained by pre-growth cleaning procedures involving an oxygen plasma treatment. A two dimensional nucleation during the initial growth which is followed by a morphology transition to three dimensional nucleation was observed by in situ reflection high energy electron diffraction. X-ray diffraction (XRD) and photoluminescence investigations suggest that the ZnO epilayer consists of a high quality layer on top of a transition layer containing a high density of defects in the interfacial region. A full width at half maximum (FWHM) of 0.005° is obtained for the ZnO(0002) diffraction peak in an XRD rocking curve, while a broad tail extending from the peak can also be observed. The photoluminescence spectra exhibit dominant bound exciton emission with a FWHM of 3 meV at low temperatures and free exciton emission combined with a ver...

Electrical, optical, and structural properties of indium–tin–oxide thin films for organic light-emitting devices

Abstract: High-quality indium–tin–oxide (ITO) thin films (200–850 nm) have been grown by pulsed laser deposition (PLD) on glass substrates without a postdeposition annealing treatment. The structural, electrical, and optical properties of these films have been investigated as a function of target composition, substrate deposition temperature, background gas pressure, and film thickness. Films were deposited from various target compositions ranging from 0 to 15 wt % of SnO2 content. The optimum target composition for high conductivity was 5 wt % SnO2+95 wt % In2O3. Films were deposited at substrate temperatures ranging from room temperature to 300 °C in O2 partial pressures ranging from 1 to 100 mTorr. Films were deposited using a KrF excimer laser (248 nm, 30 ns full width at half maximum) at a fluence of 2 J/cm2. For a 150-nm-thick ITO film grown at room temperature in an oxygen pressure of 10 mTorr, the resistivity was 4×10−4 Ω cm and the average transmission in the visible range (400–700 nm) was 85%. For a 170-n...

Characterization and properties of green-emitting β-SiAlON:Eu2+ powder phosphors for white light-emitting diodes

Abstract: This letter reports a β-SiAlON:Eu2+ green phosphor with the composition of Eu0.00296Si0.41395Al0.01334O0.0044N0.56528. The phosphor powder exhibits a rod-like morphology with the length of ∼4μm and the diameter of ∼0.5μm. It can be excited efficiently over a broad spectral range between 280 and 480 nm, and has an emission peak at 535 nm with a full width at half maximum of 55 nm. It has a superior color chromaticity of x=0.32 and y=0.64. The internal and external quantum efficiencies of this phosphor is 70% and 61% at λex=303nm, respectively. This newly developed green phosphor has potential applications in phosphor-converted white LEDs.

A Comprehensive Analysis of

Abstract: Using a simple approach based on the scalar finite element method, propagation characteristics of multilayer chan- nel waveguides are calculated. The effective index, modal field, confinement factor, far-field intensity pattern, and radiation angle of the far-field pattern (full width at half maximum intensity) for multilayer channel waveguides formed with multiple quantum well (MQW) materials and with the MQW materials replaced by a single homogeneous material with the root mean square value of the refractive indexes are compared. Numerical results confirm that the root-mean-square-value approximation, which has been widely used for planar MQW (two-dimensional) waveguides, is useful also for MQW channel (three-dimensional) waveguides with a large number of layers.