Showing papers on "Gallium nitride published in 1970"
TL;DR: In this paper, the phonons and electrons of n-type gallium nitride have been studied using first order Raman spectroscopy and infrared reflectivity and the values of the allowed optical phonon frequencies, the dielectric constants, the optical electron mass and relaxation time, and the Born effective charge are reported.
149 citations
37 citations
TL;DR: In this paper, an analysis was conducted on the final products obtained in attempts to prepare single phase gallium nitride from single crystal gallium arsenide, and it was found that the lowest temperature at which conversion to GaN became significant was in the range 600 to 700°C, over the temperature range 700 to 1000°C GaN was the only crystalline phase present, and above 1100°C β-Ga2O3 was the main constituent.
Abstract: An analysis has been conducted on the final products obtained in attempts to prepare single phase gallium nitride from single crystal gallium arsenide. When the intermediate oxide phase was nitrided in pure ammonia it was found that (i) the lowest temperature at which rate of conversion ofβ-Ga2O3 to GaN became significant was in the range 600 to 700°C, (ii) over the temperature range 700 to 1000°C GaN was found to be the only crystalline phase present, (iii) above 1100°Cβ-Ga2O3 was the main constituent. In comparison, when the oxide phase was nitrided in a 50% NH3-50% N2 atmosphere it was found that (i) the lowest temperature at which conversion to GaN occurred lay between 700 and 750°C, (ii) there was only a narrow range of temperatures, 750 to 870°C, in which the final products were found to contain GaN as the only crystalline phase, (iii) samples nitrided above 870°C exhibited both GaN andβ-Ga2O3 phases, the proportion ofβ-Ga2O3 increasing with increasing temperature.
21 citations
TL;DR: In this paper, a single crystal gallium nitride in thin films and bulk form is reported. But the thin films were prepared by reacting GaCl3 and NH3 and depositing on to single crystal silicon carbide substrates.
Abstract: Attempts to prepare single crystal gallium nitride in thin films and bulk form are reported. The thin films were prepared by reacting GaCl3 and NH3 and depositing on to single crystal silicon carbide substrates. The bulk gallium nitride was prepared by the conversion of single crystals of gallium arsenide using an intermediate oxide phase.
17 citations