Showing papers on "Gallium nitride published in 1975"
TL;DR: In this paper, the Monte Carlo technique has been used to calculate the velocity-field relationship for GaN, including polar optical scattering, acoustic scattering, piezoelectric scattering, and ionized impurity scattering.
Abstract: The Monte Carlo technique has been used to calculate the velocity‐field relationship for GaN The calculation has included polar optical scattering, acoustic scattering, piezoelectric scattering, and ionized impurity scattering The electron mobility has also been evaluated at low fields as a function of impurity concentration
145 citations
TL;DR: In this article, an internally heated pressure vessel was used to study the decomposition reaction of GaN at temperatures above 900°C and the phase equilibria in the system Ga-N2.
126 citations
Patent•
19 Aug 1975
TL;DR: In this paper, a single crystal of gallium nitride which bears good electric characteristics and cohesion power to sapphire base was synthesized to synthesize a gallium-graph.
Abstract: PURPOSE: To synthesize single crystal of gallium nitride which bears good electric characteristics and cohesion power to sapphire base. COPYRIGHT: (C)1977,JPO&Japio
12 citations
Patent•
17 Jul 1975
TL;DR: In this article, high pure, monocrystalline GaN films are produced by deposition on a substrate (I) from a flowing reactive gas phase at elevated temp., the gas phase consisting of mixture of Ga trihalide (IIa) and/or organo-Ga cpds.
Abstract: Highly pure, monocrystalline GaN films are produced by deposition on a substrate (I) from a flowing reactive gas phase at elevated temp., the gas phase consisting of mixture of Ga trihalide (IIa) and/or organo-Ga cpds. (IIb), a cpd. (III) yielding N and a gaseous diluent (IV), whilst the temp. of (I) is 600-1200 degrees C. The pref. materials and amts. are: (I) transition metal nitride or carbide alone or as monocrystalline film on sapphire or another inert material; (II) GaC13, GaBr3, GaI3 and GaXR2 (in which X is C1 or Br, R is Me or Et) in a concn. of max. 0.5 mole %; (III) (CN)2, N2H4 and NH3 in a concn. of max. 99.5 mole %; (IV) N2, inert gas and H2. (I) can be heated in a tubular furnace or by electric high frequency heating using a susceptor which can be heated by induction. The GaN films have reproducible opto-electronic properties.
2 citations