Showing papers on "Gallium nitride published in 1977"
TL;DR: In this article, the crystallographic aspect of gallium nitride epitaxy on sapphire was investigated for the vapor phase epitaxy system GaCl/NH 3 /HCl/N 2.
29 citations
Patent•
12 Dec 1977TL;DR: A solar cell which comprises a body of silicon having a P-N junction therein with a transparent conducting N-type gallium nitride layer as an ohmic contact on the N type side of the semiconductor exposed to solar radiation is described in this article.
Abstract: A solar cell which comprises a body of silicon having a P-N junction therein with a transparent conducting N-type gallium nitride layer as an ohmic contact on the N-type side of the semiconductor exposed to solar radiation.
14 citations
TL;DR: In this paper, the properties of GaN heteroepitaxial layers, both undoped and Mg-doped, were studied by scanning electron microscopy, and the results established a basis for the qualitative characterization of the Mg distribution in GaN layers.
Abstract: Cathodo luminescence (CL) properties of GaN heteroepitaxial layers, both undoped and Mg-doped, were studied by scanning electron microscopy. The GaN samples examined were grown on single crystal sapphire substrates by vapor phase epitaxy and contained different amounts of Mg. It was found that the CL intensity of a GaN specimen depends on its Mg concentration. As the amount of Mg in the GaN lattice increases, the spectral maximum shifts to longer wavelengths; as the full compensation level is approached, as indicated by an abrupt increase in resistivity, the overall CL intensity decreases to complete extinction. These effects are presumably due to the increased density of recombination centers, predominantly nonradiative, generated by the incorporation of Mg deep level impurities. These results established a basis for the qualitative characterization of the Mg distribution in GaN layers. This technique was applied to GaN metal-insulator (GaN:Mg)-n-type semi conductor (GaN) electroluminescent diodes in order to determine the nonuni formity of Mg distribution in the insulating layer. Relevant CL micrographs indicate that, in some cases, isolated conducting grains are embed-ded in an otherwise insulating matrix. This observation was correlated with specific device characteristics to provide a basis for rationalizing device performance.
11 citations
Patent•
15 Apr 1977
TL;DR: In this article, an inactivated film of well controlled interface characteristics on the surface of a group III-V compound semiconductor was formed by thermal oxidation of a gallium nitride film formed by vapor growth method.
Abstract: PURPOSE:To form an inactivated film of well controlled interface characteristics on the surface of a group III-V compound semiconductor by thermal oxidation of a gallium nitride film formed by vapor growth method, etc.
7 citations
Patent•
30 Aug 1977
TL;DR: In this paper, a high quality epitaxial growth layer of GaN on a silicon substrate by pyrolyzing organic Ga compounds and NH3 was constructed by forming a high-quality growth layer.
Abstract: PURPOSE:To form a high quality epitaxial growth layer of GaN on a silicon substrate by pyrolyzing organic Ga compounds and NH3.
1 citations