Showing papers on "Gallium nitride published in 1978"
112 citations
Patent•
28 Mar 1978
TL;DR: In this article, a light-emitting device consisting of a sapphire substrate, an epitaxial layer of monocrystalline semiconductor p-type gallium nitride, and a layer of semiconductor-type aluminum nitride was presented.
Abstract: A semiconductor light-emitting device comprising a sapphire substrate, an epitaxial layer of monocrystalline semiconductor p-type gallium nitride deposited on the substrate, and a layer of semiconductor-type aluminum nitride, deposited on the semiconductor gallium nitride layer and forming an injecting heterojunction therewith. The device emits bright blue light.
58 citations
TL;DR: In this paper, the preparation of thin films of gallium phosphide and gallium nitride by deposition from low pressure rf-excited plasmas in mixtures of trimethyl gallium with ammonia and phosphine, respectively, is described.
Abstract: We report the preparation of thin films of gallium phosphide and gallium nitride by deposition from low‐pressure rf‐excited plasmas in mixtures of trimethylgallium with ammonia and phosphine, respectively. With the deposition conditions used, the gallium phosphide is found to be amorphous, while the gallium nitride is polycrystalline. We present preliminary measurements of optical and electrical properties.
48 citations
TL;DR: In this paper, the surface state density and time constant of a GaAs MIS structure, corrected for the dispersive behavior of the insulator, were derived as 7.6×1011 cm−2 eV−1 and 1.9×10−4 sec, respectively.
Abstract: Amorphous gallium nitride was deposited onto various substrates by reactive sputtering of gallium in nitrogen ambient. Higher pressure up to 2×10−1 Torr is effective in making films closer to the stoichiometric composition. Annealing at 350 °C improves the insulating property of as‐deposited films by decreasing dc and ac conductance. The surface‐state density and time constant of a GaAs MIS structure, corrected for the dispersive behavior of the insulator, was derived as 7.6×1011 cm−2 eV−1 and 1.9×10−4 sec, respectively. This surface‐state density is much lower than that for the native oxide.
46 citations
TL;DR: In this article, a single crystal thin film of gallium nitride by ion implantation was shown to have new luminescence bands at 2.85 and 2.58 eV for the phosphorus and arsenic impurities, respectively.
25 citations
Patent•
08 Sep 1978
TL;DR: In this paper, a GaN low-temperature buffer layer consisting of a nearly spheric body composed of a single-crystal layer and a spheric single crystal having a specific particle size on the surface of a substrate crystal and further depositing a gallium nitride-based compound semiconductor layer is proposed.
Abstract: PROBLEM TO BE SOLVED: To sufficiently cover the surface of a deposited layer with a low- temperature buffer layer by forming a compound semiconductor buffer layer comprising a single-crystal layer and a spheric single crystal having a specific particle size on the surface of a substrate crystal and further depositing a gallium nitride-based compound semiconductor layer SOLUTION: A light emitting element comprises a laminate composed of layers 112-126 formed on, for example, a sapphire substrate 101 having, for example, (0001)-face (C-face) as a preform The layer 122 is a GaN low- temperature buffer layer which mainly comprises a nearly spheric body composed a single-crystal layer having a thickness (t) in an as-grown state and a spheric body composed mainly of a single crystal having a diameter of 01t to 50t The layer 122 is formed by using, for example, the well known organo- metallic thermal decomposition vapor growth method or a vapor phase epitaxial growth method, such as the VPE growth method, etc On the layer 122, the gallium nitride layers 123-126 are growth at high temperatures
12 citations
TL;DR: In this article, it was shown that the properties of GaN:Zn (conductivity type, cathodoluminescence (peaks and efficiency)) can not be related uniquely to the partial pressure of zinc during the growth, but it is also necessary to take into account HCl and the thickness of the π layer in order to obtain a satisfactory representation of these properties.
Abstract: GaN:Zn//Al2O3 electroluminescent devices have been obtained with a wide range of emitted colours (blue, green, yellow and red) ; theses devices have high potential since external quantum efficiencies greater than 1 % and power efficiencies of about 10−3 have been reported. On the other hand, from the literature it seems that each colour is obtained randomly, since apparently the same method of preparation is used. We show that the properties of GaN:Zn (conductivity type, cathodoluminescence (peaks and efficiency)) can not be related uniquely to the partial pressure of zinc during the growth, but it is also necessary to take into account the partial pressure of HCl and the thickness of the π layer in order to obtain a satisfactory representation of these properties. From this knowledge, one can deduce the different parameters for growing layers for devices and control their properties. The device fabrication consists of the deposition of a Zn doped thin layer, which is nearly insulating but with p tendency (π layer), onto a Zn doped n type layer. It is demonstrated that the characteristics of the devices (I(V) curves, electroluminescent peaks and efficiencies are related to the characteristics of the π layer and on the transition from n to π. Blue LEDS with characteristics very similar to p-n junction characteristics have been obtained.
7 citations
Patent•
19 Apr 1978
TL;DR: In this article, a mixed solutin of phosphoric acid and sulfuric acid was used to etch GaN crystal at 180 to 250 deg.C by using a mixture of solutes.
Abstract: PURPOSE:To etch GaN crystal at 180 to 250 deg.C by using a mixed solutin of phosphoric acid and sulfuric acid.
5 citations
Patent•
11 Sep 1978
TL;DR: In this paper, the authors proposed a method to obtain gallium nitride thin film by a molecular beam deposition method or under a condition similar to it, by emitting Ga steam and NH3 simultaneously on a surface of a substrate heated to a specified temp. under a pressure lower than 10 Pa order.
Abstract: PURPOSE:To obtain gallium nitride thin film by a molecular beam deposition method or under a condition similar to it, by emitting Ga steam and NH3 simultaneously on a surface of gallium nitride substrate heated to a specified temp. range under a pressure lower than 10 Pa order.
1 citations