Showing papers on "Gallium nitride published in 1983"

Method of making a gallium nitride light-emitting diode

Abstract: The substrate of a gallium nitride light-emitting diode is made rough at given positions on the surface thereof, or an insulating film strip pattern is attached on the surface of the substrate prior to growing an n-type conductive gallium nitride layer and a semi-insulating gallium nitride layer thereon. As a result, high conductivity regions are formed in the semi-insulating layer at positions corresponding to the rough surfaces or the insulating film strip pattern in such a manner that each of the high conductivity region extends from the n-type conductive layer to the upper surface of the semi-insulating layer so as to function as a conductor to be connected to an electrode. In the same manner similar high conductive regions are made along kerf portions in a diode wafer, preventing each diode chip from being damaged on cutting.

Semiconductor light emitter based on gallium nitride and process for manufacture thereof

Abstract: The semiconductor light emitter comprises a substrate (I) from a single-crystalline material transparent within the visible range of spectrum. Onto the substrate (I) there are deposited: a layer (2) of gallium nitride of the n-type conductivity and, above it, a layer (3) of gallium nitride alloyed with acceptor dopes. The emitter also comprises two metallic electrodes (5) and (6). Onto the electrode (5) a negative-polarity voltage is applied, onto the electrode (6)--a positive-polarity voltage. According to the present invention, over the layer (3) of gallium nitride alloyed with acceptor dopes a layer (4) of an insulating material is formed. The process for manufacturing the semiconductor light emitter comprises epitaxially growing, on a substrate of a single-crystalline material transparent within the visible range of spectrum, a layer of gallium nitride of the n-type conductivity; epitaxially growing, on this layer, a layer of gallium nitride alloyed by acceptor dopes, and forming two electrodes. According to the present invention, prior to the formation of the metallic electrodes on the layer of gallium nitride alloyed by acceptor dopes a layer of an insulating material is formed.

Method for making a GaN electroluminescent semiconductor device utilizing epitaxial deposition

Abstract: An electroluminescent semiconductor device comprising bodies of conductive and resistive crystalline gallium nitride (GaN) which are successively epitaxially deposited on a surface of a heat-treated sapphire substrate, and a body of insulative crystalline gallium nitride epitaxially deposited on the resistive body.

Growing of gallium nitride single crystal

Abstract: PURPOSE:To produce a uniform and thin GaN single crystal layer having excellent blue-light emitting characteristics, etc., at a low cost, by using an organic gallium compound, ammonia and N2 carrier gas, and carrying out the vapor- phase deposition of a GaN single crystal on a heated single crystal substrate. CONSTITUTION:A single crystal sapphire substrate 34 is placed on the susceptor 33 in the cylindrical quartz reaction tube 31. N2 gas is introduced as a carrier gas into the reaction tube through the inlet 35 attached to the top of the reaction tube 31, and at the same time, the single crystal substrate 34 is heated with the high-frequency coil 32. Thereafter, an organic gallium compound (e.g. trimethyl gallium) is introduced through the inlet 36 together with N2 carrier gas, and at the same time, NH3 is introduced through the inlet 37 to effect the growth of an n type GaN single crystal on the sapphire single crystal 34. Then, diethyl zinc is introduced together with N2 carrier gas through the inlet 38 to effect the growth of the Zn-doped i-type GaN single crystal on the n type GaN single crystal layer.

Gallium nitride film deposition by ionized cluster beam epitaxy

Abstract: Title of Thesis: Gallium Nitride Film Deposition by Ionized Cluster Beam Epitaxy Ghulum Bakiri, Master of Science in Electrical Engineering, 1982: Thesis Directed by: Roy H. Cornely, Associate Professor of Electrical Engineering. An experimental Ionized Cluster Beam System similar in design to the one developed at Kyoto University in Japan was designed and constructed in the Microelectronics Laboratory at NJIT. This involved making the working drawings, having the parts machined and then assembling the system in a vacuum system together with the necessary variable power supplies, meters, controls, gas inlets, cooling water connections, etc. Eleven deposition runs were then attempted to grow gallium nitride utilizing the system constructed. In a typical deposition run, gallium was vaporized from a boron nitride crucible at 1000°C and allowed to expand through a 0.5mm nozzle into a low pressure region containing nitrogen at 1-5 X 10 -4 torr in order to form clusters of about 1000 atoms each. The gallium clusters were ionized by an electron source (300 mA ) and deposited on heated quartz substrates (550°C) for reactive growth with nitrogen. For the above deposition conditions, the film growth rate was only 1 Å/min and the films were highly insulating. Photoluminescence measurements and surface analysis of the grown films revealed boron contaimination which was then traced to water vapor contamination of the boron nitride crucible and heater. The water vapor, if not driven out by pre-heating the crucible in an oven, caused the boron nitride to decompose at elevated temperatures introducing reactive contaminants at the substrate surface. Further experiments showed that for GaN 0 0 deposition rates greater than 1 Amin (and up to 1 A/sec) the crucible temperature should be at least 1100 ° C but preferably around 1400°C.

Formation of Gallium Nitride at the Interface between Silicon Nitride Encapsulant and Ion Implanted GaAs

Abstract: GaAs substrates implanted selectively with 100 keV Zn ions to a dose of 5×1014 ions/cm2 were annealed at 700–850°C with an encapsulant of plasma CVD silicon nitride Transmission electron microscopy revealed that gallium nitride is formed at the interface between the substrate and the encapsulant, and tends to grow epitaxially on (001) (GaAs in the process of 850°C annealing Gallium nitride was observed in the implanted GaAs area, but not in the unimplanted area Its formation may be attributable to the presence of the amorphous surface layer produced by ion implantation