Showing papers on "Gallium nitride published in 1985"
TL;DR: In this paper, the effect of negative bias on the selective removal of adsorbed oxygen impurities by positive ion bombardment during film deposition has been investigated and the effective sputtering yield of absorbed oxygen atoms is also estimated from AES data.
37 citations
TL;DR: In this article, the growth rate was 0.80 µm/hr at 1100°C and decreased with decreasing growth temperature, and the maximum composition x obtained was about 0.04 at 1050°C.
Abstract: Gallium nitride phosphide (GaN1-xPx) was epitaxially deposited on (0001) sapphire substrates by the vapor phase reaction of the Ga-NH3-PCl3-N2 system. The growth rate was 0.80 µm/hr at 1100°C and decreased with decreasing growth temperature. Composition x increased with decreasing growth temperature. The maximum composition x obtained was about 0.04 at 1050°C.
9 citations