Showing papers on "Gallium nitride published in 1986"
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30 Jan 1986
TL;DR: In this article, a method of passivating a gallium arsenide surface includes the steps of implanting a subsurface layer of nitrogen ions and annealing and reactive the nitrogen to form a layer consisting primarily of gallium nitride.
Abstract: A method of passivating a gallium arsenide surface includes the steps of implanting a subsurface layer of nitrogen ions and annealing and reactive the nitrogen to form a layer consisting primarily of gallium nitride.
26 citations
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TL;DR: In this article, the electron-hole plasma has been studied in both epitaxial and needle GaN and the threshold and the stability of the plasma are discussed, the observed different behaviour of the samples are interpreted in terms of growth technique.
18 citations
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24 Sep 1986
TL;DR: In this article, a GaAs substrate is irradiated with the ultraviolet rays of wavelength 2,800Angstrom or under while it is heated in a pressure-reduced NH3 gas atmosphere, and the surface of the substrate is nitrided by the produced radical.
Abstract: PURPOSE:To contrive the improvement in quality and yield by effecting the nitriding of a GaAs substrate by using a radical produced by decomposing an NH3 gas. CONSTITUTION:A GaAs substrate is irradiated with the ultraviolet rays of wavelength 2,800Angstrom or under while it is heated in a pressure-reduced NH3 gas atmosphere thereby decomposition the NH3 gas, and the surface of GaAs substrate is nitrided by the produced radical. The irradiation of NH3 gas with the ultraviolet rays of wavelength about 1,900Angstrom brings the most efficient photolysis and accordingly if the GaAs substrate is heated in advance, the nitriding progresses easily and the surface of substrate can be changed into GaN. For a light source for generating an ultraviolet ray of wavelength 2,800Angstrom or under, there are a low-pressure mercury lamp, an excimer laser and etc., and argon fluorine excimer laser is most suitable for the light source because the oscillation wavelength is 1,930Angstrom which is in accordance with a peak of light adsorption of NH3 and the average output of 10W or more can be obtained.
2 citations
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TL;DR: In this article, the optical and photo-electrical properties of undoped GaN have been investigated and a sufficiently high defect concentration of donor and acceptor types exists in the crystalline lattice.
Abstract: Investigations of optical and photoelectrical properties on GaN are reported. It is stated that already in undoped GaN a sufficiently high defect concentration of donor and acceptor types exists in the crystalline lattice. In this case fundamental absorption edge as well as GaN photoconductivity are well characterized by a heavily doped compensated semiconductor model. GaN:Zn luminescent and electrical properties are consistently analysed by using the same approach as for the description of GaN properties in the framework of a non-homogeneous semiconductor model.
[Russian Text Ignored.]
1 citations