Showing papers on "Gallium nitride published in 2019"

Beyond solid-state lighting: Miniaturization, hybrid integration, and applications of GaN nano- and micro-LEDs

Abstract: Gallium nitride (GaN) light-emitting-diode (LED) technology has been the revolution in modern lighting. In the last decade, a huge global market of efficient, long-lasting, and ubiquitous white light sources has developed around the inception of the Nobel-prize-winning blue GaN LEDs. Today, GaN optoelectronics is developing beyond solid-state lighting, leading to new and innovative devices, e.g., for microdisplays, being the core technology for future augmented reality and visualization, as well as point light sources for optical excitation in communications, imaging, and sensing. This explosion of applications is driven by two main directions: the ability to produce very small GaN LEDs (micro-LEDs and nano-LEDs) with high efficiency and across large areas, in combination with the possibility to merge optoelectronic-grade GaN micro-LEDs with silicon microelectronics in a hybrid approach. GaN LED technology is now even spreading into the realm of display technology, which has been occupied by organic LEDs and liquid crystal displays for decades. In this review, the technological transition toward GaN micro- and nanodevices beyond lighting is discussed including an up-to-date overview on the state of the art.

Temperature Dependence of the Urbach Energy in Lead Iodide Perovskites

Abstract: To gain insight into the properties of photovoltaic and light-emitting materials, detailed information about their optical absorption spectra is essential. Here, we elucidate the temperature dependence of such spectra for methylammonium lead iodide (CH3NH3PbI3), with specific attention to its sub-band gap absorption edge (often termed Urbach energy). On the basis of these data, we first find clear further evidence for the universality of the correlation between the Urbach energy and open-circuit voltage losses of solar cells. Second, we find that for CH3NH3PbI3 the static, temperature-independent, contribution of the Urbach energy is 3.8 ± 0.7 meV, which is smaller than that of crystalline silicon (Si), gallium arsenide (GaAs), indium phosphide (InP), or gallium nitride (GaN), underlining the remarkable optoelectronic properties of perovskites.

Zinc oxide light-emitting diodes: a review

Abstract: This paper presents a compact survey of the various material schemes and device structures that have been explored in the quest toward developing light-emitting diodes (LEDs) based on zinc oxide (ZnO) and related II-oxide semiconductors. Both homojunction and heterojunction devices have been surveyed. Material for fabricating these devices has been grown with a number of different techniques, such as pulsed laser deposition, molecular beam epitaxy, metal-organic chemical vapor deposition, and atomic layer epitaxy. This review also features a self-contained introduction to materials science and device processing technologies that are relevant for fabricating ZnO LEDs. These topics include dry and wet etching, contact formation, and optical doping of ZnO. Due to the overwhelming importance of p-type doping of ZnO for making electronic and optoelectronic devices, a separate short section on electrical doping of ZnO is also included. The rest of this paper describes several different attempts at making blue- and ultraviolet-emitting ZnO LEDs. These include simple pn-junction devices as well as more complicated heterostructure devices incorporating charge carrier barriers and quantum wells.

An Overview of Normally-Off GaN-Based High Electron Mobility Transistors.

Abstract: Today, the introduction of wide band gap (WBG) semiconductors in power electronics has become mandatory to improve the energy efficiency of devices and modules and to reduce the overall electric power consumption in the world. Due to its excellent properties, gallium nitride (GaN) and related alloys (e.g., AlxGa1−xN) are promising semiconductors for the next generation of high-power and high-frequency devices. However, there are still several technological concerns hindering the complete exploitation of these materials. As an example, high electron mobility transistors (HEMTs) based on AlGaN/GaN heterostructures are inherently normally-on devices. However, normally-off operation is often desired in many power electronics applications. This review paper will give a brief overview on some scientific and technological aspects related to the current normally-off GaN HEMTs technology. A special focus will be put on the p-GaN gate and on the recessed gate hybrid metal insulator semiconductor high electron mobility transistor (MISHEMT), discussing the role of the metal on the p-GaN gate and of the insulator in the recessed MISHEMT region. Finally, the advantages and disadvantages in the processing and performances of the most common technological solutions for normally-off GaN transistors will be summarized.

ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part 1: DC, CV, and RF Model

Abstract: We present the latest developments in Advance SPICE Model for GaN (ASM GaN) HEMTs in this paper. The ASM GaN model has been recently selected as an industry-standard compact model for GaN radio frequency (RF) and power devices. The core surface-potential calculation and the modeling of real device effects in this model are presented. We discuss the details of the nonlinear access region model and enhancement in this model to include a physical dependence on barrier thickness. We also present the novel model feature of configurable field-plate modeling and discuss the extraction procedure for the same. New results with the ASM GaN model on high-frequency and enhancement-mode GaN power devices are also presented.

A polarization-induced 2D hole gas in undoped gallium nitride quantum wells.

Abstract: A high-conductivity two-dimensional (2D) hole gas, analogous to the ubiquitous 2D electron gas, is desirable in nitride semiconductors for wide-bandgap p-channel transistors. We report the observation of a polarization-induced high-density 2D hole gas in epitaxially grown gallium nitride on aluminium nitride and show that such hole gases can form without acceptor dopants. The measured high 2D hole gas densities of about 5 × 1013 per square centimeters remain unchanged down to cryogenic temperatures and allow some of the lowest p-type sheet resistances among all wide-bandgap semiconductors. The observed results provide a probe for studying the valence band structure and transport properties of wide-bandgap nitride interfaces.

High Breakdown Voltage in RF AlN/GaN/AlN Quantum Well HEMTs

Abstract: In evaluating GaN high-electron mobility transistors (HEMTs) for high-power applications, it is crucial to consider the device-level breakdown characteristics. This letter replaces the conventional AlGaN barrier and common AlGaN backbarrier with unstrained AlN, and it assesses the breakdown voltage of AlN/GaN/AlN quantum well HEMTs for gate-drain spacings in the range of 0.27– $5.1~\mu \text{m}$ . The results are highlighted by a high breakdown voltage of 78 V for a gate-drain spacing of 390 nm, among the best reported for submicron-channel devices. In addition, small-signal RF measurements showed record performance for HEMTs on the AlN platform, with $\text {f}_{\text {t}}/\text {f}_{\text {max}} = {161}/{70}$ GHz. The cut-off frequency and corresponding drain bias are benchmarked against the state-of-the-art GaN HEMTs using the Johnson figure of merit, with measured devices highlighted by a JFoM value of 2.2 THz $\cdot $ V. These results illustrate the potential for AlN/GaN/AlN quantum well HEMTs as a future platform for high-power RF transistors.

Fully Vertical GaN-on-Si power MOSFETs

Abstract: We report the first demonstration of fully vertical power MOSFETs on 6.6- $\mu \text{m}$ -thick GaN, grown on a 6-inch Si substrate by metal-organic chemical vapor deposition. A robust fabrication method was developed based on a selective and local removal of the Si substrate as well as the resistive GaN buffer layers, followed by a conformal deposition of a 35- $\mu \text{m}$ -thick copper layer on the backside by electroplating, which provides excellent mechanical stability and electrical contact to the drain terminal. The fabrication process of the gate trench was optimized, improving considerably the effective mobility at the p-GaN channel and the output current of the devices. High-performance fully vertical GaN-on-Si MOSFETs are presented, with a low specific ON-resistance ( ${R}_{\textsf {on,sp}}$ ) of 5 $\text{m}\Omega $ cm2 and a high OFF-state breakdown voltage of 520 V. Our results reveal a major step toward the realization of high-performance GaN vertical power devices on cost-effective Si substrates.

A van der Waals Heterostructure Based on Graphene-like Gallium Nitride and Boron Selenide: A High-Efficiency Photocatalyst for Water Splitting.

Abstract: Hydrogen generation by photocatalytic water splitting has attained more and more research interests in the recent years since the solar energy can be directly transferred and stored as hydrogen. Ho...

Review of GaN HEMT Applications in Power Converters over 500 W

Abstract: Because of the global trends of energy demand increase and decarbonization, developing green energy sources and increasing energy conversion efficiency are recently two of the most urgent topics in energy fields. The requirements for power level and performance of converter systems are continuously growing for the fast development of modern technologies such as the Internet of things (IoT) and Industry 4.0. In this regard, power switching devices based on wide-bandgap (WBG) materials such as silicon carbide (SiC) and gallium nitride (GaN) are fast maturing and expected to greatly benefit power converters with complex switching schemes. In low- and medium-voltage applications, GaN-based high-electron-mobility transistors (HEMTs) are superior to conventional silicon (Si)-based devices in terms of switching frequency, power rating, thermal capability, and efficiency, which are crucial factors to enhance the performance of advanced power converters. Previously published review papers on GaN HEMT technology mainly focused on fabrication, device characteristics, and general applications. To realize the future development trend and potential of applying GaN technology in various converter designs, this paper reviews a total of 162 research papers focusing on GaN HEMT applications in mid- to high-power (over 500 W) converters. Different types of converters including direct current (DC)–DC, alternating current (AC)–DC, and DC–AC conversions with various configurations, switching frequencies, power densities, and system efficiencies are reviewed.

Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)

Abstract: Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and GaN) are presented. Then, the latest progress in the edge terminal techniques are discussed. Finally, a typical fabrication flow of vertical GaN SBDs is also illustrated briefly.

Design and Fabrication of GaN p-n Junction Diodes With Negative Beveled-Mesa Termination

Abstract: We report on homoepitaxial GaN p-n junction diodes with a negative beveled-mesa termination. The electric field distribution in a beveled-mesa was investigated using TCAD simulation, and the devices were designed using currently available GaN growth techniques. Shallow-angle (ca. 10°) negative bevel GaN p-n junction diodes were fabricated with various Mg acceptor concentrations in the p-layers. The suppression of electric field crowding and improvement of the breakdown voltage were observed, as the Mg concentration was decreased. The parallel-plane breakdown field of 2.86 MV/cm was obtained for a device with the breakdown voltage of 425 V.

Large-Area 1.2-kV GaN Vertical Power FinFETs With a Record Switching Figure of Merit

Abstract: This letter presents the first experimental study on capacitances, charges, and power-switching figure of merits (FOM) for a large-area vertical GaN power transistor. A 1.2-kV, 5-A GaN vertical power FinFET was demonstrated in a chip area of 0.45 mm2, with a specific on-resistance of 2.1 $\text{m}\Omega \cdot \textsf {cm}^{\textsf {2}}$ and a threshold voltage of 1.3 V. Device junction capacitances were characterized and their main components were identified. This was used to calculate the switching charges and practical switching frequencies. Device FOMs were then derived that take into account the trade-offs between the conduction and switching power losses. Our GaN vertical FinFETs exhibit high-frequency (~MHz) switching capabilities and superior switching FOMs when compared with commercial 0.9-1.2-kV Si and SiC power transistors. This letter shows the great potential of GaN vertical FinFETs for next-generation medium-voltage power electronics.

A review of gallium nitride power device and its applications in motor drive

Abstract: Wide band-gap gallium nitride (GaN) device has the advantages of large band-gap, high electron mobility and low dielectric constant. Compared with traditional Si devices, these advantages make it suitable for fast-switching and high-power-density power electronics converters, thus reducing the overall weight, volume and power consumption of power electronic systems. As a review paper, this paper summarizes the characteristics and development of the state-of-art GaN power devices with different structures, analyzes the research status, and forecasts the application prospect of GaN devices. In addition, the problems and challenges of GaN devices were discussed. And thanks to the advantages of GaN devices, both the power density and efficiency of motor drive system are improved, which also have been presented in this paper.

A Fast-Switching Integrated Full-Bridge Power Module Based on GaN eHEMT Devices

Abstract: New packaging solutions and power module structures are required to fully utilize the benefits of emerging commercially available wide bandgap semiconductor devices. Conventional packaging solutions for power levels of a few kilowatt are bulky, meaning important gate driver and measurement circuitry are not properly integrated. This paper presents a fast-switching integrated power module based on gallium nitride enhancement-mode high-electron-mobility transistors, which is easier to manufacture compared with other hybrid structures. The structure of the proposed power module is presented, and the design of its gate driver circuit and board layout structure is discussed. The thermal characteristics of the designed power module are evaluated using COMSOL Multiphysics. An ANSYS Q3D Extractor is used to extract the parasitics of the designed power module, and is included in simulation models of various complexities. The simulation model includes the SPICE model of the gallium nitride devices, and parasitics of components are included by experimentally characterizing them up to 2 GHz. Finally, the designed power module is tested experimentally, and its switching characteristics cohere with the results of the simulation model. The experimental results show a maximum achieved switching transient of 64 V/ns and verify the power loop inductance of 2.65 nH.

An Over 20-W/mm S-Band InAlGaN/GaN HEMT With SiC/Diamond-Bonded Heat Spreader

Abstract: This letter reports on an InAlGaN/GaN high-electron-mobility transistor (HEMT) employing a SiC/diamond-bonded heat spreader with a record high output power density of 22.3 W/mm. A quaternary In-added InAlGaN barrier enabled both the large current of over 1 A/mm and the high breakdown voltage of 257 V. The drain bias was increased as high as 100 V for the S-band load-pull measurement, leading to high power operation. Furthermore, the thermal resistance was reduced by 60%, from 18.8 to 7.2°C/W, by employing the SiC/diamond heat spreader. This large heat dissipation effect was clearly observed in the output power density for the load-pull measurement. Our results demonstrate that the GaN HEMT with an In-added barrier layer is promising not only for millimeter-wave applications but also for high output power microwave amplifiers.

Experimental determination of impact ionization coefficients of electrons and holes in gallium nitride using homojunction structures

Abstract: In this study, we experimentally determined the impact ionization coefficients of GaN using homoepitaxially grown p-n diodes with avalanche capability. The extracted hole impact ionization coefficient is obtained as β(E) = 4.39 × 106 exp (−1.8 × 107/E) cm−1, and the electron impact ionization coefficient is obtained as α(E) = 2.11 × 109 exp (−3.689 × 107/E) cm−1. This study also presents the temperature dependence of impact ionization coefficients in GaN. The results presented in this experimental study are an important contribution to the database on the material properties of GaN, which will enable more accurate prediction of the avalanche in GaN devices.

Superhigh out-of-plane piezoelectricity, low thermal conductivity and photocatalytic abilities in ultrathin 2D van der Waals heterostructures of boron monophosphide and gallium nitride

Abstract: A stable 2D van der Waals (vdW) heterobilayer, constituted by boron monophosphide (BP) and Gallium Nitride (GaN) monolayers, has been explored for different kinds of energy conversion and nanoelectronics. The nearly matched lattice constants of GaN and BP are commensurate with each other in their lattice structures. The out-of-plane inversion asymmetry coupled with the large difference in atomic charges between the GaN and BP monolayers induces in the heterobilayer a giant out-of-plane piezoelectric coefficient (|d33|max ≈ 40 pm V−1), which is the highest ever reported in 2D materials of a finite thickness. It is much higher than the out-of-plane piezoelectric coefficient reported earlier in multilayered Janus transition metal dichalcogenide MXY (M = Mo, W; X, Y = S, Se, Te) (|d33|max = 10.57 pm V−1). Such a high out-of-plane piezoelectricity found in a BP/GaN heterobilayer can bring about gigantic strain-tunable top gating effects in nanopiezotronic devices based on the same. Moreover, electron mobility (∼104 cm2 V−1 s−1) is much higher than that of transition metal dichalcogenides and conventional semiconductors. The origin of low lattice thermal conductivity (κL ∼ 25.25 W m−1 K−1) in BP/GaN at room temperature, which is lower than that of black phosphorene (78 W m−1 K−1), buckled arsenene (61 W m−1 K−1), BCN (90 W m−1 K−1), MoS2 (34.5 W m−1 K−1) and WS2 (32 W m−1 K−1) monolayers, has been systematically investigated via phonon dispersion, lattice thermal conductivity, phonon lifetime and mode Gruneisen parameters. The valence band maximum (VBM) and conduction band minimum (CBM) arising from GaN and BP monolayers respectively result in a type II vdW heterobilayer, which is found to be thermodynamically favorable for photocatalytic water splitting in both acidic and neutral media. The exciton binding energies are comparable to those of MoS2 and C3N4 single layers, while the absorbance reaches as high as ∼105 cm−1 in the visible wavelength region. The emergence of high piezoelectricity, high carrier mobility, low lattice thermal conductivity and photocatalytic water splitting abilities in the proposed vdW heterobilayer signifies enormous potential for its versatile applications in nanoscale energy harvesting, e.g., nano-sensors in medical devices, future nanopiezotronics, 2D thermoelectrics and solar energy conversion.

High Performance and Highly Robust AlN/GaN HEMTs for Millimeter-Wave Operation

Abstract: We report on a 3 nm AlN/GaN HEMT technology for millimeter-wave applications. Electrical characteristics for a 110 nm gate length show a maximum drain current density of 1.2 A/mm, an excellent electron confinement with a low leakage current below $10~\mu \text{A}$ /mm, a high breakdown voltage and a FT/Fmax of 63/300 GHz at a drain voltage of 20V. Despite residual trapping effects, state of the art large signal characteristics at 40 GHz and 94 GHz are achieved. For instance, an outstanding power added efficiency of 65% has been reached at VDS = 10V in pulsed mode at 40 GHz. Also, an output power density of 8.3 W/mm at VDS = 40V is obtained associated to a power added efficiency of 50%. At 94 GHz, a record CW output power density for Ga-polar GaN transistors has been reached with 4 W/mm. Additionally, room temperature preliminary robustness assessment at 40 GHz has been performed at VDS = 20V. 24 hours RF monitoring showed no degradation during and after the test.

Tuning the Electronic Properties of Hexagonal Two-Dimensional GaN Monolayers via Doping for Enhanced Optoelectronic Applications

Abstract: We explore structural, electronic, and magnetic properties of two-dimensional (2D) gallium nitride (GaN) monolayer (ML) doped with different elements belonging to the groups III–VI, using density f...

ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part-II: Modeling of Charge Trapping

Abstract: Because of charge trapping in GaN HEMTs, dc characteristics of these devices are not representative of high-frequency operation. The advanced spice model GaN model presented in Part I of this paper is combined with a Shockley–Reed–Hall-based trap model, yielding a comprehensive FET model for GaN HEMTs which can accurately model GaN devices exhibiting trapping-related dispersion effects. Measurement results of the dc and pulsed output and transfer characteristics of a commercially available GaN HEMT are presented, trapping in the device is modeled, and excellent fit to the measured data is shown. This paper presents an accurate model of trapping which is validated for eight different quiescent bias points of pulse measurements, with quiescent drain voltage ranging from 5 to 20 V and quiescent gate voltage ranging from −2.8 to −3.8 V, and a large range of gate and drain voltages to which the device was pulsed in the pulse measurements and at which the device was measured in the dc measurements, with gate voltage ranging from −4 to 0.4 V and drain voltage ranging from 0 to 40 V. This paper also presents high-frequency (10 GHz) large-signal RF validation of the model for optimal complex load condition.

Part I: Physical Insight Into Carbon-Doping-Induced Delayed Avalanche Action in GaN Buffer in AlGaN/GaN HEMTs

Abstract: Physics behind the improvement in breakdown voltage of AlGaN/GaN HEMTs with carbon-doping of GaN buffer is discussed. Modeling of carbon as acceptor traps and self-compensating acceptor/donor traps is discussed with respect to their impact on avalanche breakdown. Impact of carbon behaving as a donor as well as acceptor traps on electric field relaxation and avalanche generation is discussed in detail to establish the true nature of carbon in GaN that delays the avalanche action. This understanding of the behavior of carbon-doping in GaN buffer is then utilized to discuss design parameters related to carbon doped buffer. Design parameters such as undoped channel thickness and relative trap concentration induced by carbon-doping are discussed with respect to the performance metrics of breakdown voltage, leakage current, sheet charge density, and dynamic ON-resistance.

Vertical GaN p–n diode with deeply etched mesa and the capability of avalanche breakdown

Abstract: A simple structure with high breakdown voltage and a low leakage current of a vertical GaN p–n diode on a GaN free-standing substrate is demonstrated. We describe a vertical p–n diode with a simple edge termination that has a drift layer etched deeply and vertically. A device simulation revealed that the electric field was more relaxed at the device edge and applied uniformly in the entire device with increasing etching depth. We fabricated the simulated structure and succeeded in reducing the leakage current and improving the breakdown voltage. With this structure, a stable avalanche breakdown can be observed.

Facilitation of GaN-Based RF- and HV-Circuit Designs Using MVS-GaN HEMT Compact Model

Abstract: This paper illustrates the usefulness of the physics-based compact device models in investigating the impact of device behavioral nuances on the operation and performance of the circuits and systems. The industry standard MIT virtual source gallium nitride high electron-mobility transistor (GaN HEMT) (MVSG) model is used as the modeling framework to understand the operation of the GaN HEMTs and study the key device–circuit interactions in the GaN-based high-frequency and power conversion circuits. Details of the core model equations along with their physical underpinnings are presented along with the benchmark tests to verify the model’s convergence robustness and simulation accuracy. The usefulness of such a compact model in circuit design is highlighted through examples of the GaN-based high-voltage converter and RF-power amplifiers. It is shown that the slew-rates in hard-switched buck converters are determined by the dynamic charge distribution among the field plates in GaN HEMTs, indicating the importance of the device-level effect on circuit performance. Likewise, it is shown using the MVSG model that the performance metrics, such as drain efficiency and linearity, of the GaN RF-power amplifiers are heavily dependent on the device-level effects, such as access-region depletion, thermal effects, and charge-trapping effects. These GaN-based circuits designed using the MVSG model can be used as the example cases to demonstrate the importance of the accurate physical compact models in designing high performance circuits and systems in emerging technologies.

Vapor-Phase Incommensurate Heteroepitaxy of Oriented Single-Crystal CsPbBr3 on GaN: Toward Integrated Optoelectronic Applications.

Abstract: Integrating metallic halide perovskites with established modern semiconductor technology is significant for promoting the development of application-level optoelectronic devices. To realize such devices, exploring the growth dynamics and interfacial carrier dynamics of perovskites deposited on the core materials of semiconductor technology is essential. Herein, we report the incommensurate heteroepitaxy of highly oriented single-crystal cesium lead bromide (CsPbBr3) on c-wurtzite GaN/sapphire substrates with atomically smooth surface and uniform rectangular shape by chemical vapor deposition. The CsPbBr3 microplatelet crystal exhibits green-colored lasing under room temperature and has a structural stability comparable with that grown on van der Waals mica substrates. Time-resolved photoluminescence spectroscopy studies show that the type-II CsPbBr3-GaN heterojunction effectively enhances the separation and extraction of free carriers inside CsPbBr3. These findings provide insights into the fabrication and application-level integrated optoelectronic devices of CsPbBr3 perovskites.

Embedded Cooling for Wide Bandgap Power Amplifiers: A Review

Abstract: Successful utilization of the inherent capability of wide bandgap materials and architectures for radio frequency (RF) power amplifiers (PAs) necessitates the creation of an alternative thermal management paradigm. Recent “embedded cooling” efforts in the aerospace industry have focused on overcoming the near-junction thermal limitations of conventional electronic materials and enhancing removal of the dissipated power with on-chip cooling. These efforts, focusing on the use of diamond substrates and microfluidic jet impingement, are ushering in a new generation (Gen3) of thermal packaging technology. Following the introduction of a modified Johnson's figure-of-merit (JFOM-k), which includes thermal conductivity to reflect the near-junction thermal limitation, attention is turned to the options, challenges, and techniques associated with the development of embedded thermal management technology (TMT). Record GaN-on-Diamond transistor linear power of 11 W/mm, transistor power fluxes in excess of 50 kW/cm2, and heat fluxes, above 40 kW/cm2, achieved in Defense Advanced Research Projects Agency (DARPA)'s near-junction thermal transport (NJTT) program, are described. Raytheon's ICECool demonstration monolithic microwave integrated circuits (MMICs), which achieved 3.1× the CW RF power output and 4.8× the CW RF power density relative to a baseline design, are used to illustrate the efficacy of Gen3 embedded cooling.

GaN-On-Diamond HEMT Technology With T AVG = 176°C at P DC,max = 56 W/mm Measured by Transient Thermoreflectance Imaging

Abstract: Record DC power has been demonstrated in AlGaN/GaN high electron mobility transistors fabricated using a substrate replacement process in which a thick diamond substrate is grown by chemical vapor deposition following removal of the original Si substrate. Crucial to the process is a ~30 nm thick SiN interlayer that has been optimized for thermal resistance. The reductions obtained in self-heating have been quantified by transient thermoreflectance imaging and interpreted using 3D numerical simulation. With a DC power dissipation level of 56 W/mm, the measured average and maximum temperatures in the gate-drain access region were 176 °C and 205 °C, respectively.

Gallium-Nitride Semiconductor Technology and Its Practical Design Challenges in Power Electronics Applications: An Overview

Abstract: This paper will revise, experimentally investigate, and discuss the main application challenges related to gallium nitride power semiconductors in switch-mode power converters. Gallium Nitride (GaN) devices are inherently gaining space in the market. Due to its high switching speed and operational switching frequency, challenges related to the circuit design procedure, passive component selection, thermal management, and experimental testing are currently faced by power electronics engineers. Therefore, the focus of this paper is on low-voltage (<650 V) devices that are used to assemble DC-DC and/or DC-AC converters to, for instance, interconnect PV generation systems in the DC and/or AC grids. The current subjects will be discussed herein: GaN device structure, the advantages and disadvantages of each lateral gallium nitride technology available, design challenges related to electrical layout and thermal management, overvoltages and its implications in the driver signal, and finally, a comprehensive comparison between GaN and Si technology considering the main parameters to increase the converters efficiency.

Robustness of 650-V Enhancement-Mode GaN HEMTs Under Various Short-Circuit Conditions

Abstract: This paper presents the short-circuit behavior and degradation of 650-V/60-A enhancement-mode Gallium nitride (GaN) high electron mobility transistors (HEMTs) under various test conditions. First, this paper introduces the basic information of device, test method, and platform. Subsequently, single pulse, 10-μs short-circuit tests are performed from 50 to 400 V to extract the typical behavior of devices. Both short-circuit current self-regulation phenomenon and quick failure have been observed. Simultaneously, the short-circuit behavior of the device at various gate drive voltages and temperatures has been explored to identify the protection condition. Then, repetitive short-circuit tests have been performed to reveal device degradation trends. As a result, their output current reduction and gate-to-source threshold voltage shift have occurred. This paper shows the critical need to improve the robustness of this type of GaN HEMT from the device and circuit perspectives.