Showing papers on "Gate driver published in 1969"

Sound-responsive light

Abstract: A sound-responsive light illuminated by an audio-actuated serially connected switch. The audio-actuated switch includes a thyristor, preferably an SCR, the gate of which is triggered by an audio frequency signal from a microphone and audio amplifier. The amplifier is a class A audio amplifier with biasing and loading provided so that the light will be illuminated by sound above a selected level. A nonlinear potentiometer is used for the load impedance of one of the amplifier stages to permit selection of the desired audio level which triggers the thyristor. The input terminals of a rectified power supply are connected across the principal terminals of the SCR so that the parallel combination may be connected in series with the electric light and an alternating current power source. Coupling is provided from the output of the audio amplifier to the gate of the thyristor by means of a series capacitor and a shunt gate resistor of approximately 1000 ohms.

Gate control drive unit

Abstract: A SLIDING GATE STRUCTURE SUPPORTED AT ONE END BY ROLLERS ENGAGING TRACKS ON A FENCE STRUCTURE AND AT THE OTHER END BY A DRIVE UNIT HAVING A REVERSIBLE ELECTRIC MOTOR DRIVING A GROUND ENGAGING WHEEL AND A SECOND GROOVED WHEEL RIDING ON A TRACK DISPOSED ACROSS THE OPENING IN THE FENCE STRUCTURE. THE DRIVE UNIT IS RIGIDLY ATTACHED TO THE GATE AND SUPPORTS THE OTHER END AND PROVIDES A MOUNTING SURFACE FOR A SOLENOID ACTUATED LATCHING DEVICE WHICH ENGAGES A LATCH MEMBER ATTACHED TO A GATE POST OF THE FENCE TO HOLD THE GATE IN THE CLOSED POSITION.

Resonant gate transistor with fixed position electrically floating gate electrode in addition to resonant member

Abstract: A resonant gate transistor is provided with a gate electrode with means to bias the gate so that normally off detectors such as P-channel MOSFETs can be employed, such detectors being more compatible with NPN bipolar transistors for integration than normally on N-channel detectors. The gate electrode is preferably biased by a floating diode of very small capacitance so as to avoid charge leakage and reduced gain. The gate electrode permits large area electrostatic coupling with the vibratory member.

Minimization of MOSFET gate leakage current in buffer amplifier circuits

Abstract: It is shown that the components of gate leakage current of a MOSFET used in a previously described unity gain buffer amplifier may be reduced to a minimum under static and dynamic conditions. Modified packaging and novel biasing techniques can minimize both extrinsic and intrinsic components of gate leakage current at the input to the amplifier.

An All-Transistor, 1-Kilowatt, High-Gain, UHF Power Amplifier

Abstract: An all-transistor power amplifier which delivers a cw power output of 1 kilowatt at 400 MHz has been designed and fabricated. In this design approach, a number of discrete transistors are connrected in parallel to form a power module, and the outputs of a quantity of modules are then combined to achieve the desired total output power. The discrete transistor used in the amplifier is the RCA-2N5016 overlay type. When operated as a single device in an optimum 400-MHz amplifier circuit, this transistor produces a power output of 15 to 18 watts for a power input of 5 to 6 watts.