Topic
Gate driver
About: Gate driver is a research topic. Over the lifetime, 7532 publications have been published within this topic receiving 75854 citations.
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TL;DR: A comprehensive analysis of the two schemes in question, including worst-case analysis used to assess their parametric dependence due to manufacturing tolerances and temperature variations, as well as the in-depth design procedure that can be generally applied to any power module containing a Kelvin-source, shows a response time within tens of nanoseconds and functionality under short circuit and overload scenarios.
Abstract: This paper proposes short circuit and overload gate-driver dual-protection scheme based on the parasitic inductance between the Kelvin- and power-source terminals of high-current SiC mosfet modules. The paper presents a comprehensive analysis of the two schemes in question, including worst-case analysis used to assess their parametric dependence due to manufacturing tolerances and temperature variations, as well as the in-depth design procedure that can be generally applied to any power module containing a Kelvin-source. For verification, a compact 1.2-kV, 400-A half-bridge module integrating the two protection circuits was developed. The results obtained demonstrate a response time within tens of nanoseconds, and effectively validate their functionality under short circuit and overload scenarios. Finally, a 100-kW, 400-V dc three-phase voltage-source inverter was used to demonstrate the gate-driver with integrated protection functions under 105°C ambient temperature conditions.
35 citations
Patent•
26 Oct 1999TL;DR: In this paper, a liquid crystal display that prevents a flicker by employing a circuit with adjustable resistors in the output of a common voltage generator is described, where the difference between the first and second common voltages is equal to the difference in the kickback voltages at the first point and at the second point.
Abstract: Disclosed is a liquid crystal display that prevents a flicker by employing a circuit with adjustable resistors in the output of a common voltage generator. The common voltage generator supplies two distinct common voltages, one common voltage being supplied to a common electrode at a point that is physically close to the output of a gate driver, and a second common voltage being supplied to a point that is physically further from the output of the gate driver than the point where the first voltage is applied. These points where the first common voltage and the second common voltages are applied are electrically coupled via an internal panel resistor. A flicker is prevented by adjusting the variable resistors so that the difference between the first and second common voltages is equal to the difference in the kickback voltages at the first point and at the second point.
35 citations
TL;DR: In this paper, a 1.9 GHz Si power MOSFET with 50% power-added efficiency and 0.3-1.0 W output power at a 3-5 V supply voltage has been developed for use as a high-power amplifier in cellular telephones.
Abstract: A 1.9-GHz Si power MOSFET with 50% power-added efficiency and 0.3-1.0 W output power at a 3-5 V supply voltage has been developed for use as a high-power amplifier in cellular telephones. This MOSFET achieves high efficiency and high-power gain at low supply voltage by using a 0.5-/spl mu/m gate power MOSFET with an Al-shorted metal-silicide/Si gate structure, which improves the cut-off frequency and reduces the on-state resistance.
35 citations
Patent•
17 Jun 1999TL;DR: In this article, a gate drive circuit for an isolated gate device, a method of driving the same and a switchmode power supply employing the circuit or the method, is presented.
Abstract: A gate drive circuit for an isolated gate device, a method of driving the same and a switch-mode power supply employing the circuit or the method. In one embodiment, the circuit includes: (1) a capacitor, having a first terminal coupled to a source of drive voltage and a second terminal coupled to a gate of the isolated gate device, that stores a charge therein when the drive voltage maintains the isolated gate device in an "on" state and (2) a conductive path, leading from the first terminal to an output terminal of the isolated gate device and enabled when the isolated gate device is to be transitioned from the "on" state to an "off" state, that provides a negative off-bias voltage to the gate thereby to avoid spurious turn-on of the isolated gate device.
34 citations
Patent•
15 Jul 2010TL;DR: In this paper, a gate output control method is adapted into a flat display having a plurality of gate drive integrated circuits, which consists of providing a gate control signal; providing a oblique control signal to oblique modulate the gate control signals for generating a gate controller signal with oblique; modulating the gate controller signals with the oblique signal to obtain a modulated gate control message; and outputting the modulated signal to the gate drive components.
Abstract: A gate output control method is adapted into a flat display having a plurality of gate drive integrated circuits. The method comprises: providing a gate control signal; providing a oblique control signal to oblique modulate the gate control signal for generating a gate control signal with oblique; modulating the gate control signal with oblique to obtain a modulated gate control signal; and outputting the modulated gate control signal to the gate drive integrated circuits. A falling edge of the modulated gate control signal comprises a oblique-varying period and a vertical-varying period. In the oblique-varying period, the modulated gate control signal firstly changes to a predetermined voltage in a first slope, and then changes in a second slope until the vertical-varying period. In the vertical-varying period, the modulated gate control signal changes vertically or nearly vertically.
34 citations