Gate driver

About: Gate driver is a research topic. Over the lifetime, 7532 publications have been published within this topic receiving 75854 citations.

Complementary gate driver on array circuit employed for panel display

Abstract: The present invention provides a complementary gate driver on array circuit employed for panel display, comprising: a plurality of GOA unit which are cascade connected, and a nth GOA unit controls charge to a nth horizontal scanning line G(n) in a display area, and the nth GOA unit comprises a pull-up circuit module, a pull-down circuit module, a pull-down holding circuit module, a pull-up controlling circuit module, a pull-down circuit module of a nth gate signal point Q(n), and a bootstrap capacitor; the pull-up circuit module, the pull-down circuit module, the pull-down holding circuit module, the pull-down circuit module of the nth gate signal point Q(n), and the bootstrap capacitor are respectively coupled to the nth gate signal point Q(n) and the nth horizontal scanning line G(n), and the pull-up controlling circuit module is coupled to the nth horizontal scanning line G(n). The complementary GOA circuit employed for panel display of the present invention is capable of reducing the dimension of the pull-down holding circuit module in the GOA circuit. The dimension-reduced GOA circuit is applicable for narrow frame or non frame panel display products.

Voltage gradient limitation of IGBTS by optimised gate-current profiles

Abstract: Using MOS-controlled semiconductors provide the opportunity to directly affect the voltage and currents gradients during the switching transients at the gate. An active gate driver is presented that imposes optimised gate current profiles in order to limit the dv/dt and di/dt. When limiting the dv/dt to 1 kV/mus the switching losses are be reduced by 35% in comparison to the common limitation method by gate resistor. The switch-off losses are improved about 10% by employing an optimised gate signal.

A 150-kW 99% Efficient All Silicon Carbide Triple-Active-Bridge Converter for Solar-Plus-Storage Systems

Abstract: Solar-plus-storage systems could effectively mitigate uncertainties of the photovoltaic (PV) generation and improve system reliability by adding an integrated battery energy storage system. As a three-port bidirectional isolated dc-dc converter with soft-switching capability, the triple-active-bridge (TAB) converter inherently match the requirements of the solar-plus-storage system. However, challenges still remain in the TAB converter design to further improve the system efficiency. In this paper, the detailed design, implementation, and demonstration for a silicon carbide (SiC) 150-kW TAB converter are presented. Starting from a brief review of the TAB converter, the modulation scheme, power characteristics, and soft-switching region are analyzed. Then, the detailed design of the H-bridge converter building block is given. To improve the system efficiency, a comprehensive characterization of the SiC gate driver with various external gate resistances is performed to address tradeoffs between switching loss and voltage overshoot during transients, as well as the thermal performance of the H-bridge building block. In addition, the design and characterization for the 20-kHz three-port transformer are also given. Comprehensive experimental studies are conducted on a full-power prototype to verify the proposed design. With a measured 99.1% peak efficiency, the proposed TAB converter can fulfill the requirements for solar-plus-storage applications.

An efficient resonant gate drive scheme for high frequency applications

Abstract: Gallium Nitride (GaN) and Silicon Carbide (SiC) devices have been found to withstand high voltages without showing degradation [1] and can be switched at high frequencies making them attractive for high power drives. Though GaN/SiC devices can be operated at high temperature and high frequencies, it is important to develop gate drive circuits to turn ON and OFF these devices efficiently at high speeds. This paper proposes a resonant gate drive circuit that aims at reducing the power loss associated with high frequency switching of power IGBT/MOSFETs. The proposed circuit is compared with traditional gate drive circuits from power consumption and switching speed points of view. Experimental results are given to illustrate the concept.

Switching performance improvement of IGBT modules using an active gate driver

Abstract: This paper addresses the issues of switching behavior of a high power insulated gate bipolar transistor (IGBT) that works in hard switching conditions. First, the voltage and current switching waveforms of IGBT modules are described for an IGBT phase-leg module with an inductive load, and the associated switching losses, reverse recovery current of free-wheeling diodes, voltage overshoot, and EMI noise are analyzed. Based on the analysis, an actively controlled gate drive circuit is proposed, which provides optimization of the fast driving for low switching losses and short switching time, and slow driving for low noise and switching stress. Compared to a conventional gate drive strategy, the proposed active gate driver (AGD) has the capability of reducing the switching losses, delay time, and Miller plateau duration effectively during both turn-on and turn-off transient. Experimental results verify the validity and effectiveness of the proposed gate driving method.